J. Semicond. > 2012, Volume 33 > Issue 10 > 102003

SEMICONDUCTOR PHYSICS

Dry etching of new phase-change material Al1.3Sb3Te in CF4/Ar plasma

Zhang Xu, Rao Feng, Liu Bo, Peng Cheng, Zhou Xilin, Yao Dongning, Guo Xiaohui, Song Sanniang, Wang Liangyong, Cheng Yan, Wu Liangcai, Song Zhitang and Feng Songlin

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DOI: 10.1088/1674-4926/33/10/102003

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Abstract: The dry etching characteristic of Al1.3Sb3Te film was investigated by using a CF4/Ar gas mixture. The experimental control parameters were gas flow rate into the chamber, CF4/Ar ratio, the O2 addition, the chamber background pressure, and the incident RF power applied to the lower electrode. The total flow rate was 50 sccm and the behavior of etch rate of Al1.3Sb3Te thin films was investigated as a function of the CF4/Ar ratio, the O2 addition, the chamber background pressure, and the incident RF power. Then the parameters were optimized. The fast etch rate was up to 70.8 nm/min and a smooth surface was achieved using optimized etching parameters of CF4 concentration of 4%, power of 300 W and pressure of 80 mTorr.

Key words: Al1.3Sb3Te

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    Received: 21 August 2015 Revised: 17 April 2012 Online: Published: 01 October 2012

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      Zhang Xu, Rao Feng, Liu Bo, Peng Cheng, Zhou Xilin, Yao Dongning, Guo Xiaohui, Song Sanniang, Wang Liangyong, Cheng Yan, Wu Liangcai, Song Zhitang, Feng Songlin. Dry etching of new phase-change material Al1.3Sb3Te in CF4/Ar plasma[J]. Journal of Semiconductors, 2012, 33(10): 102003. doi: 10.1088/1674-4926/33/10/102003 ****Zhang X, Rao F, Liu B, Peng C, Zhou X L, Yao D N, Guo X H, Song S N, Wang L Y, Cheng Y, Wu L C, Song Z T, Feng S L. Dry etching of new phase-change material Al1.3Sb3Te in CF4/Ar plasma[J]. J. Semicond., 2012, 33(10): 102003. doi: 10.1088/1674-4926/33/10/102003.
      Citation:
      Zhang Xu, Rao Feng, Liu Bo, Peng Cheng, Zhou Xilin, Yao Dongning, Guo Xiaohui, Song Sanniang, Wang Liangyong, Cheng Yan, Wu Liangcai, Song Zhitang, Feng Songlin. Dry etching of new phase-change material Al1.3Sb3Te in CF4/Ar plasma[J]. Journal of Semiconductors, 2012, 33(10): 102003. doi: 10.1088/1674-4926/33/10/102003 ****
      Zhang X, Rao F, Liu B, Peng C, Zhou X L, Yao D N, Guo X H, Song S N, Wang L Y, Cheng Y, Wu L C, Song Z T, Feng S L. Dry etching of new phase-change material Al1.3Sb3Te in CF4/Ar plasma[J]. J. Semicond., 2012, 33(10): 102003. doi: 10.1088/1674-4926/33/10/102003.

      Dry etching of new phase-change material Al1.3Sb3Te in CF4/Ar plasma

      DOI: 10.1088/1674-4926/33/10/102003
      Funds:

      The National Natural Science Foundation of China (General Program, Key Program, Major Research Plan)

      The National Basic Research Program of China (973 Program)

      • Received Date: 2015-08-21
      • Accepted Date: 2012-04-17
      • Revised Date: 2012-04-17
      • Published Date: 2012-09-10

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