Dry etching of new phase-change material Al1.3Sb3Te in CF4/Ar plasma

Zhang Xu; Rao Feng; Liu Bo; Peng Cheng; Zhou Xilin; Yao Dongning; Guo Xiaohui; Song Sanniang; Wang Liangyong; Cheng Yan; Wu Liangcai; Song Zhitang; Feng Songlin

doi:10.1088/1674-4926/33/10/102003

Article Navigation > Journal of Semiconductors > 2012 > 33(10): 102003

Zhang Xu, Rao Feng, Liu Bo, Peng Cheng, Zhou Xilin, Yao Dongning, Guo Xiaohui, Song Sanniang, Wang Liangyong, Cheng Yan, Wu Liangcai, Song Zhitang, Feng Songlin. Dry etching of new phase-change material Al1.3Sb3Te in CF4/Ar plasma[J]. Journal of Semiconductors, 2012, 33(10): 102003. doi: 10.1088/1674-4926/33/10/102003 ****Zhang X, Rao F, Liu B, Peng C, Zhou X L, Yao D N, Guo X H, Song S N, Wang L Y, Cheng Y, Wu L C, Song Z T, Feng S L. Dry etching of new phase-change material Al1.3Sb3Te in CF4/Ar plasma[J]. J. Semicond., 2012, 33(10): 102003. doi: 10.1088/1674-4926/33/10/102003.

Citation:

Zhang X, Rao F, Liu B, Peng C, Zhou X L, Yao D N, Guo X H, Song S N, Wang L Y, Cheng Y, Wu L C, Song Z T, Feng S L. Dry etching of new phase-change material Al1.3Sb3Te in CF4/Ar plasma[J]. J. Semicond., 2012, 33(10): 102003. doi: 10.1088/1674-4926/33/10/102003.

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Dry etching of new phase-change material Al_1.3Sb₃Te in CF₄/Ar plasma

DOI: 10.1088/1674-4926/33/10/102003

State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
Graduate University of the Chinese Academy of Sciences, Beijing 100049, China
State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
Graduate University of the Chinese Academy of Sciences, Beijing 100049, China
State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China

Funds:

The National Natural Science Foundation of China (General Program, Key Program, Major Research Plan)

The National Basic Research Program of China (973 Program)

Received Date: 2015-08-21
Accepted Date: 2012-04-17
Revised Date: 2012-04-17
Published Date: 2012-09-10

Abstract

Abstract

The dry etching characteristic of Al_1.3Sb₃Te film was investigated by using a CF₄/Ar gas mixture. The experimental control parameters were gas flow rate into the chamber, CF₄/Ar ratio, the O₂ addition, the chamber background pressure, and the incident RF power applied to the lower electrode. The total flow rate was 50 sccm and the behavior of etch rate of Al_1.3Sb₃Te thin films was investigated as a function of the CF₄/Ar ratio, the O₂ addition, the chamber background pressure, and the incident RF power. Then the parameters were optimized. The fast etch rate was up to 70.8 nm/min and a smooth surface was achieved using optimized etching parameters of CF₄ concentration of 4%, power of 300 W and pressure of 80 mTorr.
- Al_1.3Sb₃Te

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Dry etching of new phase-change material Al_1.3Sb₃Te in CF₄/Ar plasma

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Dry etching of new phase-change material Al_1.3Sb₃Te in CF₄/Ar plasma

Dry etching of new phase-change material Al_1.3Sb₃Te in CF₄/Ar plasma