J. Semicond. > 2012, Volume 33 > Issue 2 > 023001

SEMICONDUCTOR MATERIALS

Synthesis and efficient field emission characteristics of patterned ZnO nanowires

Zhang Yongai, Wu Chaoxing, Zheng Yong and Guo Tailiang

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DOI: 10.1088/1674-4926/33/2/023001

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Abstract: Patterned ZnO nanowires were successfully synthesized on ITO electrodes deposited on the glass substrate by using a simple thermal evaporation approach. The morphology, crystallinity and optical properties of ZnO nanowires were characterized by scanning electron microscopy, X-ray diffraction, energy dispersive X-ray and photoluminescence spectroscopy. Their field emission characteristics were also investigated. SEM images showed that the ZnO nanowires, with a diameter of 100-200 nm and length up to 5 μm, were highly uniform and well distributed on the linear ITO electrodes. The field emission measurement indicated that patterned ZnO nanowire arrays have a turn-on field of 1.6 V/μm at current density of 1 μ A/cm2 and a threshold field of 4.92 V/μ m at current density of 1 mA/cm2 at an emitter-anode gap of 700 μm. The current density rapidly reached 2.26 mA/cm2 at an applied field of 5.38 V/μm. The fluctuation of emission current was lower than 5% for 4.5 h. The low turn-on field, high current density and good stability of patterned ZnO nanowire arrays indicate that it is a promising candidate for field emission application.

Key words: zinc oxide

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    Received: 20 August 2015 Revised: 19 September 2011 Online: Published: 01 February 2012

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      Zhang Yongai, Wu Chaoxing, Zheng Yong, Guo Tailiang. Synthesis and efficient field emission characteristics of patterned ZnO nanowires[J]. Journal of Semiconductors, 2012, 33(2): 023001. doi: 10.1088/1674-4926/33/2/023001 ****Zhang Y N G, Wu C X, Zheng Y, Guo T L. Synthesis and efficient field emission characteristics of patterned ZnO nanowires[J]. J. Semicond., 2012, 33(2): 023001. doi: 10.1088/1674-4926/33/2/023001.
      Citation:
      Zhang Yongai, Wu Chaoxing, Zheng Yong, Guo Tailiang. Synthesis and efficient field emission characteristics of patterned ZnO nanowires[J]. Journal of Semiconductors, 2012, 33(2): 023001. doi: 10.1088/1674-4926/33/2/023001 ****
      Zhang Y N G, Wu C X, Zheng Y, Guo T L. Synthesis and efficient field emission characteristics of patterned ZnO nanowires[J]. J. Semicond., 2012, 33(2): 023001. doi: 10.1088/1674-4926/33/2/023001.

      Synthesis and efficient field emission characteristics of patterned ZnO nanowires

      DOI: 10.1088/1674-4926/33/2/023001
      Funds:

      National High Technology Research and Development Program for Advanced Materials of China (Grant no. 2008AA03A313)

      • Received Date: 2015-08-20
      • Accepted Date: 2011-07-27
      • Revised Date: 2011-09-19
      • Published Date: 2012-01-20

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