Simultaneous quality improvement of the roughness and refractive index of SiC thin films

Gh. Sareminia; H. Simchi; A. Ostovari; L. Lavasanpour

doi:10.1088/1674-4926/33/6/063001

J. Semicond. > 2012, Volume 33 > Issue 6 > 063001

SEMICONDUCTOR MATERIALS

Simultaneous quality improvement of the roughness and refractive index of SiC thin films

Gh. Sareminia, H. Simchi, A. Ostovari and L. Lavasanpour

+ Author Affiliations

DOI: 10.1088/1674-4926/33/6/063001

Abstract: We deposited silicon carbide thin layers on cleaned Si (100) substrates using the plasma enhanced chemical vapor deposition method, and show that the RFTIR spectrum is periodic in the near and medium infrared ranges. It is shown that both the deposition rate and the uniformity of the thin films are decreased by increasing the substrate temperature, and that the refractive index is increased by increasing the substrate temperature. This shows that there is a trade-off between the quality improvement of the uniformity and refractive index.

Key words: SiC, PECVD, RFTIR, thickness measurement, refractive index

[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
[9]
[10]
[11]
[12]
[13]

1	Donor impurity-related optical absorption coefficients and refractive index changes in a rectangular GaAs quantum dot in the presence of electric field Sheng Wang, Yun Kang, Xianli Li Journal of Semiconductors, 2016, 37(11): 112001. doi: 10.1088/1674-4926/37/11/112001
2	Influence of the initial transient state of plasma and hydrogen pre-treatment on the interface properties of a silicon heterojunction fabricated by PECVD Wu Chunbo, Zhou Yuqin, Li Guorong, Liu Fengzhen Journal of Semiconductors, 2011, 32(9): 096001. doi: 10.1088/1674-4926/32/9/096001
3	Effect of Growth Gas Flow Rate on the Defects Density of SiC Single Crystal Yang Ying, Lin Tao, Chen Zhiming Journal of Semiconductors, 2008, 29(5): 851-854.
4	Influence of the Trapping Effect on Temperature Characteristics in 4H-SiC MESFETs Lü Hongliang, Zhang Yimen, Zhang Yuming, Che Yong, Wang Yuehu, et al. Journal of Semiconductors, 2008, 29(2): 334-337.
5	Recent Progress in SiC Monocrystal Growth and Wafer Machining Jiang Shouzhen, Xu Xian'gang, Li Juan, Chen Xiufang, Wang Yingmin, et al. Chinese Journal of Semiconductors , 2007, 28(5): 810-814.
6	Mo/Schottky Barrier Diodes on 4H-Silicon Carbide Zhang Fasheng, Li Xinran Chinese Journal of Semiconductors , 2007, 28(3): 435-438.
7	Gas Fluid Modeling of SiC Epitaxial Growth in Chemical Vapor Deposition Processes Jia Renxu, Zhang Yimen, Zhang Yuming, Guo Hui Chinese Journal of Semiconductors , 2007, 28(S1): 541-544.
8	Structural Analysis of the SiCGe Epitaxial Layer Grown on SiC Substrate Li Lianbi, Chen Zhiming, Pu Hongbin, Lin Tao, Li Jia, et al. Chinese Journal of Semiconductors , 2007, 28(S1): 123-126.
9	C-V Characteristic Distortion in the Pinch-Off Mode of a Buried Channel MOS Structure in 4H-SiC Gao Jinxia, Zhang Yimen, Zhang Yuming Chinese Journal of Semiconductors , 2006, 27(7): 1259-1263.
10	Design and Simulation of a Light-Activated Darlington Transistor Based on a SiCGe/3C-SiC Hetero-Structure Chen Zhiming, Ren Ping, Pu Hongbin Chinese Journal of Semiconductors , 2006, 27(2): 254-257.
11	Direct Tunneling Effect in SiC Schottky Contacts Tang Xiaoyan, Zhang Yimen, Zhang Yuming, Guo Hui, Zhang Lin, et al. Chinese Journal of Semiconductors , 2006, 27(1): 174-177.
12	Ohmic Contact on SiC Using n+ Polysilicon/n+ SiC Heterojunction Zhang Lin, Zhang Yimen, Zhang Yuming, Tang Xiaoyan Chinese Journal of Semiconductors , 2006, 27(S1): 378-380.
13	Etching Characteristics of PECVD SiC Chen Sheng, 李志宏, Li Zhihong, Zhang Guobing, Guo Hui, et al. Chinese Journal of Semiconductors , 2006, 27(S1): 381-384.
14	Homoepitaxial Growth and Properties of 4H-SiC by Chemical Vapor Deposition Gao Xin, Sun Guosheng, Li Jinmin, Zhao Wanshun, Wang Lei, et al. Chinese Journal of Semiconductors , 2005, 26(S1): 70-73.
15	High Quality Ultraviolet Photodetectors Based on Silicon Carbide Huang Limin, Xie Jiachun, Liang Jin Chinese Journal of Semiconductors , 2005, 26(S1): 256-260.
16	LPCVD Homoepitaxial Growth on Off-Axis Si-Face 4H-SiC(0001) Substrates Wang Lei, Sun Guosheng, Gao Xin, Zhao Wanshun, Zhang Yongxing, et al. Chinese Journal of Semiconductors , 2005, 26(S1): 113-116.
17	Turn-On Mechanism of a Light-Activated SiC Heterojuntion Darlington HBT Pu Hongbin, Chen Zhiming Chinese Journal of Semiconductors , 2005, 26(S1): 143-146.
18	n-Type 4H-SiC Ohmic Contact Chen Gang Chinese Journal of Semiconductors , 2005, 26(S1): 273-276.
19	High Rate Deposition of Device Quality Microcrystalline Si Transition Regime Films Using RF-PECVD Zhou Bingqing, Zhu Meifang, Liu Fengzhen, Liu Jinlong, Gu Jinhua, et al. Chinese Journal of Semiconductors , 2005, 26(S1): 98-101.
20	Fabrication of Hydrogenated Microcrystalline Silicon Thin Films at Low Temperature by VHF-PECVD YANG Hui-dong, WU Chun-ya, MAI Yao-hua, LI Hong-bo, XUE Jun-ming, et al. Chinese Journal of Semiconductors , 2002, 23(9): 902-908.

Search

GET CITATION

Gh. Sareminia, H. Simchi, A. Ostovari, L. Lavasanpour. Simultaneous quality improvement of the roughness and refractive index of SiC thin films[J]. Journal of Semiconductors, 2012, 33(6): 063001. doi: 10.1088/1674-4926/33/6/063001

G Sareminia, H Simchi, A Ostovari, L Lavasanpour. Simultaneous quality improvement of the roughness and refractive index of SiC thin films[J]. J. Semicond., 2012, 33(6): 063001. doi: 10.1088/1674-4926/33/6/063001.

Export: BibTex EndNote

Article Metrics

Article views: 3442 Times PDF downloads: 1852 Times Cited by: 0 Times

History

Received: 03 December 2014 Revised: 30 January 2012 Online: Published: 01 June 2012

We deposited silicon carbide thin layers on cleaned Si (100) substrates using the plasma enhanced chemical vapor deposition method, and show that the RFTIR spectrum is periodic in the near and medium infrared ranges. It is shown that both the deposition rate and the uniformity of the thin films are decreased by increasing the substrate temperature, and that the refractive index is increased by increasing the substrate temperature. This shows that there is a trade-off between the quality improvement of the uniformity and refractive index.

Simultaneous quality improvement of the roughness and refractive index of SiC thin films

Search

GET CITATION

Share:

Article Metrics

History

Catalog

Email This Article

Simultaneous quality improvement of the roughness and refractive index of SiC thin films

DOI: 10.1088/1674-4926/33/6/063001

Abstract

References

Proportional views

Catalog

Simultaneous quality improvement of the roughness and refractive index of SiC thin films

Search

GET CITATION

Share:

Article Metrics

History

Catalog

Email This Article

Simultaneous quality improvement of the roughness and refractive index of SiC thin films

DOI: 10.1088/1674-4926/33/6/063001

Abstract

References

Proportional views

Catalog

Export File

Citation

Format

Content