Citation: |
Yue Shuanglin, Xu Tingting, Li Wei, Yan Ji, Yi He. Tungsten oxide nanostructures: controllable growth and field emission[J]. Journal of Semiconductors, 2012, 33(6): 063002. doi: 10.1088/1674-4926/33/6/063002
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Yue S L, Xu T T, Li W, Yan J, Yi H. Tungsten oxide nanostructures: controllable growth and field emission[J]. J. Semicond., 2012, 33(6): 063002. doi: 10.1088/1674-4926/33/6/063002.
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Tungsten oxide nanostructures: controllable growth and field emission
DOI: 10.1088/1674-4926/33/6/063002
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Abstract
Non-fully oxidized tungsten oxide (WO3-x) nanostructures with controllable morphology were fabricated by adjusting the gas pressure in chemical vapor deposition. The comparative field emission (FE) measurements showed that the obtained W18O49 nanowires have excellent FE property. The turn-on field was 7.1 V/μ m for 10 μA/cm2 and the observed highest current density was 4.05 mA/cm2 at a field of 17.2 V/μm. Good electron emission reproducibility was also observed during thermal evaporation and desorption testing.-
Keywords:
- non-fully oxidized tungsten oxides
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References
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