J. Semicond. > 2012, Volume 33 > Issue 6 > 064002
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SEMICONDUCTOR DEVICES

A 150% enhancement of PMOSFET mobility using hybrid orientation

Tang Zhaohuan, Tan Kaizhou, Cui Wei, Zhang Jing, Zhong Yi, Xu Shiliu, Hao Yue, Zhang Heming, Hu Huiyong, Zhang Zhengfan and Hu Gangyi

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DOI: 10.1088/1674-4926/33/6/064002

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Abstract: A high-performance PMOSFET based on silicon material of hybrid orientation is obtained. Hybrid orientation wafers, integrated by (100) and (110) crystal orientation, are fabricated using silicon-silicon bonding, chemical mechanical polishing, etching silicon and non-selective expitaxy. A PMOSFET with W/L = 50 μm/8 μm is also processed, and the measured results show that the drain-source current and peak mobility of the PMOSFET are enhanced by up to 50.7% and 150% at Vgs = -15 V and Vds = -0.5 V, respectively. The mobility values are higher than that reported in the literature.

Key words: hybrid orientation, non-selective expitaxy, carrier mobility, (110) crystal orientation, PMOSFET, chemical mechanical polishing

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    Tang Zhaohuan, Tan Kaizhou, Cui Wei, Zhang Jing, Zhong Yi, Xu Shiliu, Hao Yue, Zhang Heming, Hu Huiyong, Zhang Zhengfan, Hu Gangyi. A 150% enhancement of PMOSFET mobility using hybrid orientation[J]. Journal of Semiconductors, 2012, 33(6): 064002. doi: 10.1088/1674-4926/33/6/064002
    Tang Z H, Tan K Z, Cui W, Zhang J, Zhong Y, Xu S L, Hao Y, Zhang H M, Hu H Y, Zhang Z F, Hu G Y. A 150% enhancement of PMOSFET mobility using hybrid orientation[J]. J. Semicond., 2012, 33(6): 064002. doi: 10.1088/1674-4926/33/6/064002.
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    Received: 20 August 2015 Revised: 14 February 2012 Online: Published: 01 June 2012

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      Article Navigation >  Journal of Semiconductors  > 2012  >  33(6): 064002
      Tang Zhaohuan, Tan Kaizhou, Cui Wei, Zhang Jing, Zhong Yi, Xu Shiliu, Hao Yue, Zhang Heming, Hu Huiyong, Zhang Zhengfan, Hu Gangyi. A 150% enhancement of PMOSFET mobility using hybrid orientation[J]. Journal of Semiconductors, 2012, 33(6): 064002. doi: 10.1088/1674-4926/33/6/064002 ****Tang Z H, Tan K Z, Cui W, Zhang J, Zhong Y, Xu S L, Hao Y, Zhang H M, Hu H Y, Zhang Z F, Hu G Y. A 150% enhancement of PMOSFET mobility using hybrid orientation[J]. J. Semicond., 2012, 33(6): 064002. doi: 10.1088/1674-4926/33/6/064002.
      Citation:
      Tang Zhaohuan, Tan Kaizhou, Cui Wei, Zhang Jing, Zhong Yi, Xu Shiliu, Hao Yue, Zhang Heming, Hu Huiyong, Zhang Zhengfan, Hu Gangyi. A 150% enhancement of PMOSFET mobility using hybrid orientation[J]. Journal of Semiconductors, 2012, 33(6): 064002. doi: 10.1088/1674-4926/33/6/064002 ****
      Tang Z H, Tan K Z, Cui W, Zhang J, Zhong Y, Xu S L, Hao Y, Zhang H M, Hu H Y, Zhang Z F, Hu G Y. A 150% enhancement of PMOSFET mobility using hybrid orientation[J]. J. Semicond., 2012, 33(6): 064002. doi: 10.1088/1674-4926/33/6/064002.
      shu

      A 150% enhancement of PMOSFET mobility using hybrid orientation

      DOI: 10.1088/1674-4926/33/6/064002

      • Science and Technology on Analog Integrated Circuit Laboratory, Chongqing 400060, China

      • Science and Technology on Analog Integrated Circuit Laboratory, Chongqing 400060, China

      • Science and Technology on Analog Integrated Circuit Laboratory, Chongqing 400060, China

      • Science and Technology on Analog Integrated Circuit Laboratory, Chongqing 400060, China

      • Sichuan Institute of Solid-State Circuits, China Electronics Technology Group Corp, Chongqing 400060, China

      • Science and Technology on Analog Integrated Circuit Laboratory, Chongqing 400060, China

      • Sichuan Institute of Solid-State Circuits, China Electronics Technology Group Corp, Chongqing 400060, China

      • Key Laboratory of the Ministry of Education for Wide-Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China

      • Key Laboratory of the Ministry of Education for Wide-Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China

      • Key Laboratory of the Ministry of Education for Wide-Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China

      • Science and Technology on Analog Integrated Circuit Laboratory, Chongqing 400060, China

      • Sichuan Institute of Solid-State Circuits, China Electronics Technology Group Corp, Chongqing 400060, China

      • Sichuan Institute of Solid-State Circuits, China Electronics Technology Group Corp, Chongqing 400060, China

      Funds:

      the National Basic Research Program of China (No.61398)

      • Received Date: 2015-08-20
      • Accepted Date: 2011-10-13
      • Revised Date: 2012-02-14
      • Published Date: 2012-05-22

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