J. Semicond. > 2012, Volume 33 > Issue 6 > 064003
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SEMICONDUCTOR DEVICES

Hot-carrier reliability in OPTVLD-LDMOS

Cheng Junji and Chen Xingbi

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DOI: 10.1088/1674-4926/33/6/064003

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Abstract: An improved structure that eliminates hot-carrier effects (HCE) in optimum variation lateral doping (OPTVLD) LDMOS is proposed. A formula is proposed showing that the surface electric field intensity of the conventional structure is strong enough to make a hot-carrier injected into oxide. However, the proposed structure effectively reduces the maximum surface electric field from 268 to 100 kV/cm and can be realized without changing any process, and thereby reduces HCE significantly.

Key words: hot-carrier effects, OPTVLD LDMOS, surface electric field intensity

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    Received: 20 August 2015 Revised: 20 January 2012 Online: Published: 01 June 2012

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      Article Navigation >  Journal of Semiconductors  > 2012  >  33(6): 064003
      Cheng Junji, Chen Xingbi. Hot-carrier reliability in OPTVLD-LDMOS[J]. Journal of Semiconductors, 2012, 33(6): 064003. doi: 10.1088/1674-4926/33/6/064003 ****Cheng J J, Chen X B. Hot-carrier reliability in OPTVLD-LDMOS[J]. J. Semicond., 2012, 33(6): 064003. doi: 10.1088/1674-4926/33/6/064003.
      Citation:
      Cheng Junji, Chen Xingbi. Hot-carrier reliability in OPTVLD-LDMOS[J]. Journal of Semiconductors, 2012, 33(6): 064003. doi: 10.1088/1674-4926/33/6/064003 ****
      Cheng J J, Chen X B. Hot-carrier reliability in OPTVLD-LDMOS[J]. J. Semicond., 2012, 33(6): 064003. doi: 10.1088/1674-4926/33/6/064003.
      shu

      Hot-carrier reliability in OPTVLD-LDMOS

      DOI: 10.1088/1674-4926/33/6/064003

      • State Key Laboratory of Electronic Thin Films and Integrated Devices of China, University of Electronic Science and Technology of China, Chengdu 610054, China

      • State Key Laboratory of Electronic Thin Films and Integrated Devices of China, University of Electronic Science and Technology of China, Chengdu 610054, China

      Funds:

      Ph.D. Programs Foundation of the Ministry of Education of China

      • Received Date: 2015-08-20
      • Accepted Date: 2011-12-15
      • Revised Date: 2012-01-20
      • Published Date: 2012-05-22

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