| Citation: |
Gu Guodong, Cai Yong, Feng Zhihong, Liu Bo, Zeng Chunhong, Yu Guohao, Dong Zhihua, Zhang Baoshun. Enhancement-mode InAlN/GaN MISHEMT with low gate leakage current[J]. Journal of Semiconductors, 2012, 33(6): 064004. doi: 10.1088/1674-4926/33/6/064004
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Gu G D, Cai Y, Feng Z H, Liu B, Zeng C H, Yu G H, Dong Z H, Zhang B S. Enhancement-mode InAlN/GaN MISHEMT with low gate leakage current[J]. J. Semicond., 2012, 33(6): 064004. doi: 10.1088/1674-4926/33/6/064004.
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Abstract
We report an enhancement-mode InAlN/GaN MISHEMT with a low gate leakage current by a thermal oxidation technique under gate. The off-state source-drain current density is as low as ～10-7 A/mm at VGS = 0 V and VDS = 5 V. The threshold voltage is measured to be +0.8 V by linear extrapolation from the transfer characteristics. The E-mode device exhibits a peak transconductance of 179 mS/mm at a gate bias of 3.4 V. A low reverse gate leakage current density of 4.9 × 10-7 A/mm is measured at VGS = -15 V.-
Keywords:
- enhancement-mode
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References
[1] [2] [3] [4] [5] [6] [7] [8] [9] [10] [11] [12] [13] [14] -
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