Enhancement-mode InAlN/GaN MISHEMT with low gate leakage current

Gu Guodong; Cai Yong; Feng Zhihong; Liu Bo; Zeng Chunhong; Yu Guohao; Dong Zhihua; Zhang Baoshun

doi:10.1088/1674-4926/33/6/064004

J. Semicond. > 2012, Volume 33 > Issue 6 > 064004

SEMICONDUCTOR DEVICES

Enhancement-mode InAlN/GaN MISHEMT with low gate leakage current

Gu Guodong, Cai Yong, Feng Zhihong, Liu Bo, Zeng Chunhong, Yu Guohao, Dong Zhihua and Zhang Baoshun

+ Author Affiliations

DOI: 10.1088/1674-4926/33/6/064004

Abstract: We report an enhancement-mode InAlN/GaN MISHEMT with a low gate leakage current by a thermal oxidation technique under gate. The off-state source-drain current density is as low as ～10^-7 A/mm at V_GS = 0 V and V_DS = 5 V. The threshold voltage is measured to be +0.8 V by linear extrapolation from the transfer characteristics. The E-mode device exhibits a peak transconductance of 179 mS/mm at a gate bias of 3.4 V. A low reverse gate leakage current density of 4.9 × 10^-7 A/mm is measured at V_GS = -15 V.

Key words: enhancement-mode

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Gu Guodong, Cai Yong, Feng Zhihong, Liu Bo, Zeng Chunhong, Yu Guohao, Dong Zhihua, Zhang Baoshun. Enhancement-mode InAlN/GaN MISHEMT with low gate leakage current[J]. Journal of Semiconductors, 2012, 33(6): 064004. doi: 10.1088/1674-4926/33/6/064004

Gu G D, Cai Y, Feng Z H, Liu B, Zeng C H, Yu G H, Dong Z H, Zhang B S. Enhancement-mode InAlN/GaN MISHEMT with low gate leakage current[J]. J. Semicond., 2012, 33(6): 064004. doi: 10.1088/1674-4926/33/6/064004.

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Received: 20 August 2015 Revised: 05 January 2012 Online: Published: 01 June 2012

We report an enhancement-mode InAlN/GaN MISHEMT with a low gate leakage current by a thermal oxidation technique under gate. The off-state source-drain current density is as low as ～10^-7 A/mm at V_GS = 0 V and V_DS = 5 V. The threshold voltage is measured to be +0.8 V by linear extrapolation from the transfer characteristics. The E-mode device exhibits a peak transconductance of 179 mS/mm at a gate bias of 3.4 V. A low reverse gate leakage current density of 4.9 × 10^-7 A/mm is measured at V_GS = -15 V.

Enhancement-mode InAlN/GaN MISHEMT with low gate leakage current

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Enhancement-mode InAlN/GaN MISHEMT with low gate leakage current

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