J. Semicond. > 2012, Volume 33 > Issue 8 > 084005
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SEMICONDUCTOR DEVICES

A simplified compact model of miniaturized cross-shaped CMOS integrated Hall devices

Huang Haiyun, Wang Dejun, Li Wenbo, Xu Yue, Qin Huibin and Hu Yongcai

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DOI: 10.1088/1674-4926/33/8/084005

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Abstract: A simplified compact model for a miniaturized cross-shaped CMOS integrated Hall device is presented. The model has a simple circuit structure, only consisting of a passive network with eight non-linear resistors and four current-controlled voltage sources. It completely considers the following effects: non-linear conductivity, geometry dependence of sensitivity, temperature drift, lateral diffusion, and junction field effect. The model has been implemented in Verilog-A hardware description language and was successfully performed in a Cadence Spectre simulator. The simulation results are in good accordance with the classic experimental results reported in the literature.

Key words: miniaturized Hall device, compact model, lateral diffusion, junction field effect

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    Received: 03 December 2014 Revised: 19 March 2012 Online: Published: 01 August 2012

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      Article Navigation >  Journal of Semiconductors  > 2012  >  33(8): 084005
      Huang Haiyun, Wang Dejun, Li Wenbo, Xu Yue, Qin Huibin, Hu Yongcai. A simplified compact model of miniaturized cross-shaped CMOS integrated Hall devices[J]. Journal of Semiconductors, 2012, 33(8): 084005. doi: 10.1088/1674-4926/33/8/084005 ****Huang H Y, Wang D J, Li W B, Xu Y, Qin H B, Hu Y C. A simplified compact model of miniaturized cross-shaped CMOS integrated Hall devices[J]. J. Semicond., 2012, 33(8): 084005. doi: 10.1088/1674-4926/33/8/084005.
      Citation:
      Huang Haiyun, Wang Dejun, Li Wenbo, Xu Yue, Qin Huibin, Hu Yongcai. A simplified compact model of miniaturized cross-shaped CMOS integrated Hall devices[J]. Journal of Semiconductors, 2012, 33(8): 084005. doi: 10.1088/1674-4926/33/8/084005 ****
      Huang H Y, Wang D J, Li W B, Xu Y, Qin H B, Hu Y C. A simplified compact model of miniaturized cross-shaped CMOS integrated Hall devices[J]. J. Semicond., 2012, 33(8): 084005. doi: 10.1088/1674-4926/33/8/084005.
      shu

      A simplified compact model of miniaturized cross-shaped CMOS integrated Hall devices

      DOI: 10.1088/1674-4926/33/8/084005

      • School of Electronic Science and Technology, Faculty of Electronic Information and Electronic Engineering, Dalian University of Technology, Dalian 116024, China

      • Institute of New Electron Devices, Hangzhou Dianzhi University, Hangzhou 310018, China

      • School of Electronic Science and Technology, Faculty of Electronic Information and Electronic Engineering, Dalian University of Technology, Dalian 116024, China

      • School of Electronic Science and Technology, Faculty of Electronic Information and Electronic Engineering, Dalian University of Technology, Dalian 116024, China

      • College of Electronic Science & Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210003, China

      • Institute of New Electron Devices, Hangzhou Dianzhi University, Hangzhou 310018, China

      • Institute of New Electron Devices, Hangzhou Dianzhi University, Hangzhou 310018, China

      • Received Date: 2014-12-03
      • Accepted Date: 2011-07-21
      • Revised Date: 2012-03-19
      • Published Date: 2012-07-27

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