A nanostructured copper telluride thin film grown at room temperature by an electrodeposition method

S. S. Dhasade; S. H. Han; V. J. Fulari

doi:10.1088/1674-4926/33/9/093002

J. Semicond. > 2012, Volume 33 > Issue 9 > 093002

SEMICONDUCTOR MATERIALS

A nanostructured copper telluride thin film grown at room temperature by an electrodeposition method

S. S. Dhasade, S. H. Han and V. J. Fulari

+ Author Affiliations

DOI: 10.1088/1674-4926/33/9/093002

Abstract: Copper telluride onion flower like microstructures, constructed by quantum dots with various diameters, were obtained by a potentiostatic electrodeposition method at room temperature. The structural, optical, surface morphology, compositional analysis and Raman spectra properties of the deposited films have been studied using X-ray diffraction, optical absorption with scanning electron microscopy, EDAX, and Raman spectroscopy. The electrolyte concentration and deposition time can be used to control the diameter of the electrodeposited quantum dots to within a range of 50-55 nm. The films are found to be stoichiometric in composition. The optical constants such as the optical band gap energy and the optical absorption spectra show significant variation in their values with a change in deposition time. Upon deposition time the band gap energy increased from a value of 2.74 to 2.89 eV.

Key words: electrodeposition, copper telluride, quantum dots, chemical composition, optical properties

[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
[9]
[10]
[11]
[12]
[13]
[14]
[15]
[16]
[17]
[18]

1	Quantum light source devices of In(Ga)As semiconductor self-assembled quantum dots Xiaowu He, Yifeng Song, Ying Yu, Ben Ma, Zesheng Chen, et al. Journal of Semiconductors, 2019, 40(7): 071902. doi: 10.1088/1674-4926/40/7/071902
2	Electrodeposition and characterization of ZnO thin films using sodium thiosulfate as an additive for photovoltaic solar cells Hassiba Rahal, Rafiaa Kihal, Abed Mohamed Affoune, Mokhtar Ghers, Faycal Djazi, et al. Journal of Semiconductors, 2017, 38(5): 053002. doi: 10.1088/1674-4926/38/5/053002
3	Differential optical gain in a GaInN/AlGaN quantum dot K. Jaya Bala, A. John Peter Journal of Semiconductors, 2017, 38(6): 062001. doi: 10.1088/1674-4926/38/6/062001
4	Substrate temperature dependent studies on properties of chemical spray pyrolysis deposited CdS thin films for solar cell applications Kiran Diwate, Amit Pawbake, Sachin Rondiya, Rupali Kulkarni, Ravi Waykar, et al. Journal of Semiconductors, 2017, 38(2): 023001. doi: 10.1088/1674-4926/38/2/023001
5	Synthesis of metal oxide composite nanosheets and their pressure sensing properties Muhammad Tariq Saeed Chani, Sher Bahadar Khan, Kh. S. Karimov, M. Abid, Abdullah M. Asiri, et al. Journal of Semiconductors, 2015, 36(2): 023002. doi: 10.1088/1674-4926/36/2/023002
6	Structural, optical and electrical properties of zinc oxide thin films deposited by a spray pyrolysis technique Yacine Aoun, Boubaker Benhaoua, Brahim Gasmi, Said Benramache Journal of Semiconductors, 2015, 36(1): 013002. doi: 10.1088/1674-4926/36/1/013002
7	Effect of Co doping on structural, optical, electrical and thermal properties of nanostructured ZnO thin films Sonet Kumar Saha, M. Azizar Rahman, M. R. H. Sarkar, M. Shahjahan, M. K. R. Khan, et al. Journal of Semiconductors, 2015, 36(3): 033004. doi: 10.1088/1674-4926/36/3/033004
8	The effects of electron irradiation on the optical properties of the organic semiconductor polypyrrole J. V. Thombare, M. C. Rath, S. H. Han, V. J. Fulari Journal of Semiconductors, 2013, 34(9): 093001. doi: 10.1088/1674-4926/34/9/093001
9	Correlation between electrical conductivity-optical band gap energy and precursor molarities ultrasonic spray deposition of ZnO thin films Said Benramache, Okba Belahssen, Abderrazak Guettaf, Ali Arif Journal of Semiconductors, 2013, 34(11): 113001. doi: 10.1088/1674-4926/34/11/113001
10	Dielectric confinement on exciton binding energy and nonlinear optical properties in a strained Zn_{1-x_in}Mg_{x_in}Se/Zn_{1-x_out}Mg_{x_out}Se quantum well J. Abraham Hudson Mark, A. John Peter Journal of Semiconductors, 2012, 33(9): 092001. doi: 10.1088/1674-4926/33/9/092001
11	Effect of rhenium doping on various physical properties of single crystals of MoSe₂ Mihir M. Vora, Aditya M. Vora Journal of Semiconductors, 2012, 33(1): 012001. doi: 10.1088/1674-4926/33/1/012001
12	First-principles study of the electronic structures and optical properties of C–F–Be doped wurtzite ZnO Zuo Chunying, Wen Jing, Zhong Cheng Journal of Semiconductors, 2012, 33(7): 072001. doi: 10.1088/1674-4926/33/7/072001
13	Optical and electrical properties of porous silicon layer formed on the textured surface by electrochemical etching Ou Weiying, Zhao Lei, Diao Hongwei, Zhang Jun, Wang Wenjing, et al. Journal of Semiconductors, 2011, 32(5): 056002. doi: 10.1088/1674-4926/32/5/056002
14	Optical and electrical properties of electrochemically deposited polyaniline-CeO₂ hybrid nanocomposite film Anees A. Ansari, M. A. M. Khan, M. Naziruddin Khan, Salman A. Alrokayan, M. Alhoshan, et al. Journal of Semiconductors, 2011, 32(4): 043001. doi: 10.1088/1674-4926/32/4/043001
15	Optical and electrical properties of N-doped ZnO and fabrication of thin-film transistors Zhu Xiaming, Wu Huizhen, Wang Shuangjiang, Zhang Yingying, Cai Chunfeng, et al. Journal of Semiconductors, 2009, 30(3): 033001. doi: 10.1088/1674-4926/30/3/033001
16	Growth and Optical Properties of ZnO Films and Quantum Wells Zhang Baoping, Kang Junyong, Yu Jinzhong, Wang Qiming, Segawa Yusaburo, et al. Chinese Journal of Semiconductors , 2006, 27(4): 613-622.
17	Influence of Polarization-Induced Electric Fields on Optical Properties of Intersubband Transitions in AlxGa1-xN/GaN Double Quantum Wells Lei Shuangying, Shen Bo, Xu Fujun, Yang Zhijian, Xu Ke, et al. Chinese Journal of Semiconductors , 2006, 27(3): 403-408.
18	Transport Properties of Two Coupled Quantum Dots Under Optical Pumping Ge Chuannan, Wen Jun, Peng Ju, Wang Baigeng Chinese Journal of Semiconductors , 2006, 27(4): 598-603.
19	Growth of Space Ordered 1.3μm InAs Quantum Dots on GaAs(100) Vicinal Substrates by MOCVD Liang Song, Zhu Hongliang, Pan Jiaoqing, Wang Wei Chinese Journal of Semiconductors , 2005, 26(11): 2074-2079.
20	Effect of Surface-Covered Annealing on the Optical Properties of ZnO Films Grown by MOCVD Wang Li, Pu Yong, Fang Wenqing, Mo Chunlan, Xiong Chuanbing, et al. Chinese Journal of Semiconductors , 2003, 24(3): 409-412.

Search

GET CITATION

S. S. Dhasade, S. H. Han, V. J. Fulari. A nanostructured copper telluride thin film grown at room temperature by an electrodeposition method[J]. Journal of Semiconductors, 2012, 33(9): 093002. doi: 10.1088/1674-4926/33/9/093002

S. S. Dhasade, S. H. Han, V. J. Fulari. A nanostructured copper telluride thin film grown at room temperature by an electrodeposition method[J]. J. Semicond., 2012, 33(9): 093002. doi: 10.1088/1674-4926/33/9/093002.

Export: BibTex EndNote

Article Metrics

Article views: 3903 Times PDF downloads: 3595 Times Cited by: 0 Times

History

Received: 03 December 2014 Revised: 01 April 2012 Online: Published: 01 September 2012

Copper telluride onion flower like microstructures, constructed by quantum dots with various diameters, were obtained by a potentiostatic electrodeposition method at room temperature. The structural, optical, surface morphology, compositional analysis and Raman spectra properties of the deposited films have been studied using X-ray diffraction, optical absorption with scanning electron microscopy, EDAX, and Raman spectroscopy. The electrolyte concentration and deposition time can be used to control the diameter of the electrodeposited quantum dots to within a range of 50-55 nm. The films are found to be stoichiometric in composition. The optical constants such as the optical band gap energy and the optical absorption spectra show significant variation in their values with a change in deposition time. Upon deposition time the band gap energy increased from a value of 2.74 to 2.89 eV.

A nanostructured copper telluride thin film grown at room temperature by an electrodeposition method

Search

GET CITATION

Share:

Article Metrics

History

Catalog

Email This Article

A nanostructured copper telluride thin film grown at room temperature by an electrodeposition method

DOI: 10.1088/1674-4926/33/9/093002

Abstract

References

Proportional views

Catalog

A nanostructured copper telluride thin film grown at room temperature by an electrodeposition method

Search

GET CITATION

Share:

Article Metrics

History

Catalog

Email This Article

A nanostructured copper telluride thin film grown at room temperature by an electrodeposition method

DOI: 10.1088/1674-4926/33/9/093002

Abstract

References

Proportional views

Catalog

Export File

Citation

Format

Content