J. Semicond. > 2013, Volume 34 > Issue 10 > 105012
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SEMICONDUCTOR INTEGRATED CIRCUITS

A new high-voltage level-shifting circuit for half-bridge power Ics

Moufu Kong and Xingbi Chen

+ Author Affiliations

 Corresponding author: Kong Moufu, kongmoufu@163.com

DOI: 10.1088/1674-4926/34/10/105012

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Abstract: In order to reduce the chip area and improve the reliability of HVICs, a new high-voltage level-shifting circuit with an integrated low-voltage power supply, two PMOS active resistors and a current mirror is proposed. The integrated low-voltage power supply not only provides energy for the level-shifting circuit and the logic circuit, but also provides voltage signals for the gates and sources of the PMOS active resistors to ensure that they are normally-on. The normally-on PMOS transistors do not, therefore, need to be fabricated in the depletion process. The current mirror ensures that the level-shifting circuit has a constant current, which can reduce the process error of the high-voltage devices of the circuit. Moreover, an improved RS trigger is also proposed to improve the reliability of the circuit. The proposed level-shifting circuit is analyzed and confirmed by simulation with MEDICI, and the simulation results show that the function is achieved well.

Key words: HVIC, level-shifting, active resistor, current mirror



[1]
Yin Y, Zane R. Dual low voltage IC based high and low side gate drive. Nineteenth Annual IEEE Applied Power Electronics Conference and Exposition, 2004, 2:1033 http://ieeexplore.ieee.org/document/1295949/
[2]
Park S, Jahns T M. A self-boost charge pump topology for a gate drive high-side power supply. IEEE Trans Power Electron, 2005, 20(2):300 doi: 10.1109/TPEL.2004.843013
[3]
Chen Xingbi. A semiconductor device. Chinese Patent, ZL 200910000724.5, 2009 http://www.freepatentsonline.com/EP0068645.html
[4]
Kim J J, Kim M H, Kim S L, et al. The new high voltage level up shifter for HVIC. IEEE 33rd Annual Power Electronics Specialists Conference, 2002, 2:626 http://ieeexplore.ieee.org/document/1022523/
[5]
Terashima T, Shimizu K, Hine S. A new level-shifting technique by divided RESURF structure. IEEE International Symposium on Power Semiconductor Devices and IC's, 1997:57 http://ieeexplore.ieee.org/document/601431/
[6]
Chen X B. Lateral low-side and high-side high-voltage devices. US Patent, No. 6998681, 2006
[7]
Chen X B. Surface voltage sustaining structure for semiconductor devices. US Patent, No. 5726469, 1998
[8]
Chen X B, Zhang B, Li Z J. Theory of optimum design of reverse-biased p-n junctions using resistive field plates and variation lateral doping. Solid-State Electron, 1992, 35(9):1365 doi: 10.1016/0038-1101(92)90173-A
[9]
Chen X B, Fan X F. Optimum VLD makes SPIC better and cheaper. 6th International Conference on Solid-State and Integrated-Circuit Technology, 2001, 1:104 http://ieeexplore.ieee.org/document/981433/
[10]
Marari B, Bertotti F, Vignola G A. Smart power IC's technologies and applications. Berlin, Heidelberg, New York:Springer Verlag, 1995:361
[11]
Chen X B. Method of producing a low-voltage power supply in a power integrated circuit. US Patent, No. 7701006, 2010
[12]
Kong M F, Chen X B. High voltage low side and high side power devices based on VLD technique. IEEE 11th International Conference on Solid-State and Integrated Circuit Technology (ICSICT), 2012:1 http://ieeexplore.ieee.org/document/6466709/
[13]
Gupta V, Rincón-Mora G A. A low dropout, CMOS regulator with high PSR over wideband frequencies. IEEE International Symposium on Circuits and Systems, 2005, 5:4245 http://ieeexplore.ieee.org/document/1465568/?arnumber=1465568&contentType=Conference%20Publications
[14]
Li Q Y, Jiang J G, Wang J K, et al. A CMOS low-noise, low-dropout regulator. Power and Energy Engineering Conference, 2010:1 http://ieeexplore.ieee.org/document/5448515/?arnumber=5448515&sortType%3Dasc_p_Sequence%26filter%3DAND(p_IS_Number:5448125)%26rowsPerPage%3D100
Fig. 1.  Circuit schematic of the conventional half-bridge HVIC.

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Fig. 2.  Circuit schematic of the proposed new half-bridge HVPIC.

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Fig. 3.  The structure of the n-LDMOS M1 and PMOS MP1.

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Fig. 4.  (a) Circuit schematic of the proposed RS trigger, and (b) its simulation result.

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Fig. 5.  The structure of the integrated low-voltage power supply.

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Fig. 6.  The structure of the high-side and low-side LDMOS transistors of Refs. [6, 11].

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Fig. 7.  The simulation results of the low-voltage power supply. (a) A variable 0-10 V low-voltage $V_{\rm ST}$ is gained while $V_{\rm DT}$ ranges from 0 to 350 V without $C_{\rm S}$ and D, and (b) $V_{\rm ST}$ $\approx$ 8 V with $C_{\rm S}$ $=$ 0.01 pF/$\mu $m.

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Fig. 8.  The circuit schematic of the voltage regulator.

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Fig. 9.  The common centre symmetry layout of the current mirror.

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Fig. 10.  The simulation results of the proposed level-shifting from MEDICI. (a) The drain output voltage $V_{\rm D1}$ of M1 with $V_{\rm SP}'$ $=$ 320 V. (b) The drain output voltage $V_{\rm D1}'$ of M1 with $V_{\rm SP}'$ $=$ 10 V.

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Table 1.   The truth table of the basic RS trigger.

Table 2.   The truth table of the proposed RS trigger.
[1]
Yin Y, Zane R. Dual low voltage IC based high and low side gate drive. Nineteenth Annual IEEE Applied Power Electronics Conference and Exposition, 2004, 2:1033 http://ieeexplore.ieee.org/document/1295949/
[2]
Park S, Jahns T M. A self-boost charge pump topology for a gate drive high-side power supply. IEEE Trans Power Electron, 2005, 20(2):300 doi: 10.1109/TPEL.2004.843013
[3]
Chen Xingbi. A semiconductor device. Chinese Patent, ZL 200910000724.5, 2009 http://www.freepatentsonline.com/EP0068645.html
[4]
Kim J J, Kim M H, Kim S L, et al. The new high voltage level up shifter for HVIC. IEEE 33rd Annual Power Electronics Specialists Conference, 2002, 2:626 http://ieeexplore.ieee.org/document/1022523/
[5]
Terashima T, Shimizu K, Hine S. A new level-shifting technique by divided RESURF structure. IEEE International Symposium on Power Semiconductor Devices and IC's, 1997:57 http://ieeexplore.ieee.org/document/601431/
[6]
Chen X B. Lateral low-side and high-side high-voltage devices. US Patent, No. 6998681, 2006
[7]
Chen X B. Surface voltage sustaining structure for semiconductor devices. US Patent, No. 5726469, 1998
[8]
Chen X B, Zhang B, Li Z J. Theory of optimum design of reverse-biased p-n junctions using resistive field plates and variation lateral doping. Solid-State Electron, 1992, 35(9):1365 doi: 10.1016/0038-1101(92)90173-A
[9]
Chen X B, Fan X F. Optimum VLD makes SPIC better and cheaper. 6th International Conference on Solid-State and Integrated-Circuit Technology, 2001, 1:104 http://ieeexplore.ieee.org/document/981433/
[10]
Marari B, Bertotti F, Vignola G A. Smart power IC's technologies and applications. Berlin, Heidelberg, New York:Springer Verlag, 1995:361
[11]
Chen X B. Method of producing a low-voltage power supply in a power integrated circuit. US Patent, No. 7701006, 2010
[12]
Kong M F, Chen X B. High voltage low side and high side power devices based on VLD technique. IEEE 11th International Conference on Solid-State and Integrated Circuit Technology (ICSICT), 2012:1 http://ieeexplore.ieee.org/document/6466709/
[13]
Gupta V, Rincón-Mora G A. A low dropout, CMOS regulator with high PSR over wideband frequencies. IEEE International Symposium on Circuits and Systems, 2005, 5:4245 http://ieeexplore.ieee.org/document/1465568/?arnumber=1465568&contentType=Conference%20Publications
[14]
Li Q Y, Jiang J G, Wang J K, et al. A CMOS low-noise, low-dropout regulator. Power and Energy Engineering Conference, 2010:1 http://ieeexplore.ieee.org/document/5448515/?arnumber=5448515&sortType%3Dasc_p_Sequence%26filter%3DAND(p_IS_Number:5448125)%26rowsPerPage%3D100

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    Received: 26 March 2013 Revised: 15 May 2013 Online: Published: 01 October 2013

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      Article Navigation >  Journal of Semiconductors  > 2013  >  34(10): 105012
      Moufu Kong, Xingbi Chen. A new high-voltage level-shifting circuit for half-bridge power Ics[J]. Journal of Semiconductors, 2013, 34(10): 105012. doi: 10.1088/1674-4926/34/10/105012 ****M F Kong, X B Chen. A new high-voltage level-shifting circuit for half-bridge power Ics[J]. J. Semicond., 2013, 34(10): 105012. doi: 10.1088/1674-4926/34/10/105012.
      Citation:
      Moufu Kong, Xingbi Chen. A new high-voltage level-shifting circuit for half-bridge power Ics[J]. Journal of Semiconductors, 2013, 34(10): 105012. doi: 10.1088/1674-4926/34/10/105012 ****
      M F Kong, X B Chen. A new high-voltage level-shifting circuit for half-bridge power Ics[J]. J. Semicond., 2013, 34(10): 105012. doi: 10.1088/1674-4926/34/10/105012.
      shu

      A new high-voltage level-shifting circuit for half-bridge power Ics

      DOI: 10.1088/1674-4926/34/10/105012

      • State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China

      Funds:

      the 2011 PhD Programs Foundation of the Ministry of Education of China 20110185110003

      Project supported by the 2011 PhD Programs Foundation of the Ministry of Education of China (No. 20110185110003)

      More Information
      • Corresponding author: Kong Moufu, kongmoufu@163.com
      • Received Date: 2013-03-26
      • Revised Date: 2013-05-15
      • Published Date: 2013-10-01

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