J. Semicond. > 2013, Volume 34 > Issue 11 > 114010
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SEMICONDUCTOR DEVICES

Improvement of the electroluminescence performance of ZnO nanorods/p-GaN light emitting diodes with a ZnO films interlayer

Shaolan Li1 and Lichun Zhang2,

+ Author Affiliations

 Corresponding author: Zhang Lichun, Email:phyzlc@163.com

DOI: 10.1088/1674-4926/34/11/114010

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Abstract: Heterostructure light-emitting diodes (LEDs) were fabricated by growing ZnO nanorods and undoped ZnO films on p-GaN templates. The heterojunction showed a diode-like I-V characteristic and emitted electroluminescence (EL) peaks at 383 nm, 402 nm, 438 nm, and 507 nm under forward bias. Since the electrons from ZnO nanorods and the holes from p-GaN could be injected into ZnO films with a relatively low carrier concentration and mobility, the radiative recombination was mainly confined in the ZnO film region. As a result, the ZnO nanorods/i-ZnO/p-GaN light emitting diode exhibits a stronger ultraviolet-violet emission peak.

Key words: light emitting diode, electroluminescence, heterojunction, ZnO nanorods



[1]
Liu Bingce, Liu Cihui, Xu Jun, et al. The investigation of temperature coefficients of grain boundary resistances variations in ZnO/p-Si heterojunction. Journal of Semiconductors, 2010, 31(12):122001 doi: 10.1088/1674-4926/31/12/122001
[2]
Benramache S, Chabane F, Benhaoua B, et al. Influence of growth time on crystalline structure, conductivity and optical properties of ZnO thin films. Journal of Semiconductors, 2013, 34(2):023001 doi: 10.1088/1674-4926/34/2/023001
[3]
Zhu H, Shan C X, Li B H, et al. Ultraviolet Electroluminescence from MgZnO-based heterojunction light-emitting diodes. J Phys Chem C, 2009, 113:2980 doi: 10.1021/jp8098768
[4]
Sadaf J R, Israr M Q, Kishwar S, et al. White electroluminescence using ZnO nanotubes/GaN heterostructure light-emitting diode. Nanoscale Res Lett, 2010, 5:957 doi: 10.1007/s11671-010-9588-z
[5]
You J B, Zhang X W, Zhang S G, et al. Improved electroluminescence from n-ZnO/AlN/p-GaN heterojunction light-emitting diodes. Appl Phys Lett, 2010, 96:201102 doi: 10.1063/1.3430039
[6]
Zhu H, Shan C X, Yao B, et al. Ultralow-threshold laser realized in zinc oxide. Adv Mater, 2009, 21:1613 doi: 10.1002/adma.v21:16
[7]
Jha S, Qian J C, Kutsay O, et al. Violet-blue LEDs based on p-GaN/n-ZnO nanorods and their stability. Nanotechnology, 2011, 22(24):245202 doi: 10.1088/0957-4484/22/24/245202
[8]
Park W I, Yi G C. Electroluminescence in n-ZnO nanorod arrays vertically grown on p-GaN. Adv Mater, 2004, 16:87 doi: 10.1002/(ISSN)1521-4095
[9]
Fang F, Zhao D, Li B, et al. Hydrogen effects on the electroluminescence of n-ZnO nanorod/p-GaN film heterojunction light-emitting diodes. Phys Chem Chem Phys, 2010, 12(25):6759 doi: 10.1039/b919079a
[10]
Lee S D, Kim Y S, Yi M S, et al. Morphology control and electroluminescence of ZnO nanorod/GaN heterojunctions prepared using aqueous solution. J Phys Chem C, 2009, 113:8954 doi: 10.1021/jp8108144
[11]
Jha S, Wang C D, Luan C Y, et al. Near-ultraviolet light-emitting devices using vertical ZnO nanorod arrays. J Electron Mater, 2012, 41(5):853 doi: 10.1007/s11664-012-1919-7
[12]
Zhang S G, Zhang X W, Si F T, et al. Ordered ZnO nanorods-based heterojunction light-emitting diodes with grapheme current spreading layer. Appl Phys Lett, 2012, 101:121104 doi: 10.1063/1.4753926
[13]
Ng A M C, Chen X Y, Fang F, et al. Solution-based growth of ZnO nanorods for light-emitting devices:hydrothermal vs. electrodeposition. Appl Phys B, 2010, 100:851 doi: 10.1007/s00340-010-4173-9
[14]
Chen X, Ng A M C, Fang F, et al. ZnO nanorod/GaN light-emitting diodes:the origin of yellow and violet emission bands under reverse and forward bias. J Appl Phys, 2011, 110(9):094513 doi: 10.1063/1.3653835
[15]
Jha S K, Luan C, To C H, et al. ZnO-nanorod-array/p-GaN high-performance ultra-violet light emitting devices prepared by simple solution synthesis. Appl Phys Lett, 2012, 101:211116 doi: 10.1063/1.4764061
[16]
Zhang L, Li Q, Qu C, et al. White electroluminescence from ZnO nanorods/p-GaN heterojunction light-emitting diodes under reverse bias. J Opt, 2013, 15:025003 doi: 10.1088/2040-8978/15/2/025003
[17]
Lee S, Kim D Y. Characteristics of ZnO/GaN heterostructure formed on GaN substrate by sputtering deposition of ZnO. Mater Sci Eng B, 2007, 137:80 doi: 10.1016/j.mseb.2006.10.014
[18]
Hwang S H, Chung T H, Lee B T. Study on the interfacial layer in ZnO/GaN heterostructure light-emitting diode. Mater Sci Eng B, 2009, 157:32 doi: 10.1016/j.mseb.2008.12.004
[19]
Zeng H, Duan G, Li Y, et al. Blue luminescence of ZnO nanoparticles based on non-equilibrium processes:defect origins and emission controls. Adv Funct Mater, 2010, 20:561 doi: 10.1002/adfm.v20:4
[20]
Gong Y, Andelman T, Neumark G F, et al. Origin of defect-related green emission from ZnO nanoparticles:effect of surface modification. Nanoscale Res Lett, 2007, 2:297 doi: 10.1007/s11671-007-9064-6
[21]
Nakamura S, Mukai T, Senon M. High-power GaN P-N junction blue-light-emitting diodes. Jpn J Appl Phys, 1991, 30:L1998 doi: 10.1143/JJAP.30.L1998
[22]
Khan M A, Chen Q, Skogman R A, et al. Violet-blue GaN homojunction light emitting diodes with rapid thermal annealed p-type layers. Appl Phys Lett, 1995, 66:2046 doi: 10.1063/1.113687
[23]
Zhu G Y, Xu C X, Lin Y, et al. Ultraviolet electroluminescence from horizontal ZnO microrods/GaN heterojunction light-emitting diode array. Appl Phys Lett, 2012, 101:041110 doi: 10.1063/1.4739002
[24]
Xu S, Xu C, Liu Y, et al. Ordered nanowire array blue/near-UV light emitting diodes. Adv Mater, 2010, 22:4749 doi: 10.1002/adma.v22:42
[25]
Janotti A, Van de Walle C G. Native point defects in ZnO. Phys Rev B, 2007, 76:165202 doi: 10.1103/PhysRevB.76.165202
[26]
Xu H Y, Liu Y C, Liu Y X, et al. Ultraviolet electroluminescence from p-GaN/i-ZnO/n-ZnO heterojunction light-emitting diodes. Appl Phys B, 2005, 80(7):871 doi: 10.1007/s00340-005-1790-9
[27]
Wu J, Liu S, Li S, et al. The influence of ZnO seed layers on n-ZnO nanostructure/p-GaN LEDs. Appl Phys A, 2012, 109:489 doi: 10.1007/s00339-012-7060-x
[28]
Jiao S J, Lu Y M, Shen D Z, et al. Ultraviolet electroluminescence of ZnO based heterojunction light emitting diode. Phys Status Solidi C, 2006, 3(4):972 doi: 10.1002/(ISSN)1610-1642
Fig. 1.  Schematic diagrams of the (a) n-ZnO nanorods/p-GaN and (b) n-ZnO nanorods/i-ZnO/p-GaN heterojunction LEDs

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Fig. 2.  The cross section SEM of (a) n-ZnO nanorods/p-GaN and (b) n-ZnO nanorods/i-ZnO/p-GaN heterojunction structure. The inset shows the surface SEM image of the nanorods

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Fig. 3.  (a) I-V characteristics of the n-ZnO nanorods/p-GaN and n-ZnO nanorods/i-ZnO/p-GaN heterojunction LEDs. The inset shows the I-V curves of Pt/Ni and Pt/Ti Ohmic contacts to p-GaN and n-ZnO nanorods, respectively. (b) XRD pattern of the n-ZnO nanorods/p-GaN and n-ZnO nanorods/i-ZnO/p-GaN heterojunction LEDs

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Fig. 4.  PL spectra of the ZnO nanorods/sapphire, ZnO nanorods/ZnO films/sapphire and p-GaN films

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Fig. 5.  EL spectra of the n-ZnO nanorods/i-ZnO/p-GaN and n-ZnO nanorods/p-GaN (inset) heterojunction LEDs

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Fig. 6.  The Gaussian curve fitting of EL spectra of the n-ZnO nanorods/i-ZnO/p-GaN LEDs measured at 17 V. Inset shows the energy band diagram of n-ZnO/i-ZnO/p-GaN heterojunction LED

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Table 1.   The electrical properties of ZnO nanorods, ZnO films and GaN films
[1]
Liu Bingce, Liu Cihui, Xu Jun, et al. The investigation of temperature coefficients of grain boundary resistances variations in ZnO/p-Si heterojunction. Journal of Semiconductors, 2010, 31(12):122001 doi: 10.1088/1674-4926/31/12/122001
[2]
Benramache S, Chabane F, Benhaoua B, et al. Influence of growth time on crystalline structure, conductivity and optical properties of ZnO thin films. Journal of Semiconductors, 2013, 34(2):023001 doi: 10.1088/1674-4926/34/2/023001
[3]
Zhu H, Shan C X, Li B H, et al. Ultraviolet Electroluminescence from MgZnO-based heterojunction light-emitting diodes. J Phys Chem C, 2009, 113:2980 doi: 10.1021/jp8098768
[4]
Sadaf J R, Israr M Q, Kishwar S, et al. White electroluminescence using ZnO nanotubes/GaN heterostructure light-emitting diode. Nanoscale Res Lett, 2010, 5:957 doi: 10.1007/s11671-010-9588-z
[5]
You J B, Zhang X W, Zhang S G, et al. Improved electroluminescence from n-ZnO/AlN/p-GaN heterojunction light-emitting diodes. Appl Phys Lett, 2010, 96:201102 doi: 10.1063/1.3430039
[6]
Zhu H, Shan C X, Yao B, et al. Ultralow-threshold laser realized in zinc oxide. Adv Mater, 2009, 21:1613 doi: 10.1002/adma.v21:16
[7]
Jha S, Qian J C, Kutsay O, et al. Violet-blue LEDs based on p-GaN/n-ZnO nanorods and their stability. Nanotechnology, 2011, 22(24):245202 doi: 10.1088/0957-4484/22/24/245202
[8]
Park W I, Yi G C. Electroluminescence in n-ZnO nanorod arrays vertically grown on p-GaN. Adv Mater, 2004, 16:87 doi: 10.1002/(ISSN)1521-4095
[9]
Fang F, Zhao D, Li B, et al. Hydrogen effects on the electroluminescence of n-ZnO nanorod/p-GaN film heterojunction light-emitting diodes. Phys Chem Chem Phys, 2010, 12(25):6759 doi: 10.1039/b919079a
[10]
Lee S D, Kim Y S, Yi M S, et al. Morphology control and electroluminescence of ZnO nanorod/GaN heterojunctions prepared using aqueous solution. J Phys Chem C, 2009, 113:8954 doi: 10.1021/jp8108144
[11]
Jha S, Wang C D, Luan C Y, et al. Near-ultraviolet light-emitting devices using vertical ZnO nanorod arrays. J Electron Mater, 2012, 41(5):853 doi: 10.1007/s11664-012-1919-7
[12]
Zhang S G, Zhang X W, Si F T, et al. Ordered ZnO nanorods-based heterojunction light-emitting diodes with grapheme current spreading layer. Appl Phys Lett, 2012, 101:121104 doi: 10.1063/1.4753926
[13]
Ng A M C, Chen X Y, Fang F, et al. Solution-based growth of ZnO nanorods for light-emitting devices:hydrothermal vs. electrodeposition. Appl Phys B, 2010, 100:851 doi: 10.1007/s00340-010-4173-9
[14]
Chen X, Ng A M C, Fang F, et al. ZnO nanorod/GaN light-emitting diodes:the origin of yellow and violet emission bands under reverse and forward bias. J Appl Phys, 2011, 110(9):094513 doi: 10.1063/1.3653835
[15]
Jha S K, Luan C, To C H, et al. ZnO-nanorod-array/p-GaN high-performance ultra-violet light emitting devices prepared by simple solution synthesis. Appl Phys Lett, 2012, 101:211116 doi: 10.1063/1.4764061
[16]
Zhang L, Li Q, Qu C, et al. White electroluminescence from ZnO nanorods/p-GaN heterojunction light-emitting diodes under reverse bias. J Opt, 2013, 15:025003 doi: 10.1088/2040-8978/15/2/025003
[17]
Lee S, Kim D Y. Characteristics of ZnO/GaN heterostructure formed on GaN substrate by sputtering deposition of ZnO. Mater Sci Eng B, 2007, 137:80 doi: 10.1016/j.mseb.2006.10.014
[18]
Hwang S H, Chung T H, Lee B T. Study on the interfacial layer in ZnO/GaN heterostructure light-emitting diode. Mater Sci Eng B, 2009, 157:32 doi: 10.1016/j.mseb.2008.12.004
[19]
Zeng H, Duan G, Li Y, et al. Blue luminescence of ZnO nanoparticles based on non-equilibrium processes:defect origins and emission controls. Adv Funct Mater, 2010, 20:561 doi: 10.1002/adfm.v20:4
[20]
Gong Y, Andelman T, Neumark G F, et al. Origin of defect-related green emission from ZnO nanoparticles:effect of surface modification. Nanoscale Res Lett, 2007, 2:297 doi: 10.1007/s11671-007-9064-6
[21]
Nakamura S, Mukai T, Senon M. High-power GaN P-N junction blue-light-emitting diodes. Jpn J Appl Phys, 1991, 30:L1998 doi: 10.1143/JJAP.30.L1998
[22]
Khan M A, Chen Q, Skogman R A, et al. Violet-blue GaN homojunction light emitting diodes with rapid thermal annealed p-type layers. Appl Phys Lett, 1995, 66:2046 doi: 10.1063/1.113687
[23]
Zhu G Y, Xu C X, Lin Y, et al. Ultraviolet electroluminescence from horizontal ZnO microrods/GaN heterojunction light-emitting diode array. Appl Phys Lett, 2012, 101:041110 doi: 10.1063/1.4739002
[24]
Xu S, Xu C, Liu Y, et al. Ordered nanowire array blue/near-UV light emitting diodes. Adv Mater, 2010, 22:4749 doi: 10.1002/adma.v22:42
[25]
Janotti A, Van de Walle C G. Native point defects in ZnO. Phys Rev B, 2007, 76:165202 doi: 10.1103/PhysRevB.76.165202
[26]
Xu H Y, Liu Y C, Liu Y X, et al. Ultraviolet electroluminescence from p-GaN/i-ZnO/n-ZnO heterojunction light-emitting diodes. Appl Phys B, 2005, 80(7):871 doi: 10.1007/s00340-005-1790-9
[27]
Wu J, Liu S, Li S, et al. The influence of ZnO seed layers on n-ZnO nanostructure/p-GaN LEDs. Appl Phys A, 2012, 109:489 doi: 10.1007/s00339-012-7060-x
[28]
Jiao S J, Lu Y M, Shen D Z, et al. Ultraviolet electroluminescence of ZnO based heterojunction light emitting diode. Phys Status Solidi C, 2006, 3(4):972 doi: 10.1002/(ISSN)1610-1642

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    Received: 31 March 2013 Revised: 13 June 2013 Online: Published: 01 November 2013

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      Article Navigation >  Journal of Semiconductors  > 2013  >  34(11): 114010
      Shaolan Li, Lichun Zhang. Improvement of the electroluminescence performance of ZnO nanorods/p-GaN light emitting diodes with a ZnO films interlayer[J]. Journal of Semiconductors, 2013, 34(11): 114010. doi: 10.1088/1674-4926/34/11/114010 ****S L Li, L C Zhang. Improvement of the electroluminescence performance of ZnO nanorods/p-GaN light emitting diodes with a ZnO films interlayer[J]. J. Semicond., 2013, 34(11): 114010. doi: 10.1088/1674-4926/34/11/114010.
      Citation:
      Shaolan Li, Lichun Zhang. Improvement of the electroluminescence performance of ZnO nanorods/p-GaN light emitting diodes with a ZnO films interlayer[J]. Journal of Semiconductors, 2013, 34(11): 114010. doi: 10.1088/1674-4926/34/11/114010 ****
      S L Li, L C Zhang. Improvement of the electroluminescence performance of ZnO nanorods/p-GaN light emitting diodes with a ZnO films interlayer[J]. J. Semicond., 2013, 34(11): 114010. doi: 10.1088/1674-4926/34/11/114010.
      shu

      Improvement of the electroluminescence performance of ZnO nanorods/p-GaN light emitting diodes with a ZnO films interlayer

      DOI: 10.1088/1674-4926/34/11/114010
      • 1.

        Editorial Department, Ludong University, Yantai 264025, China

      • 2.

        School of Physics and Optoelectronic Engineering, Ludong University, Yantai 264025, China

      Funds:

      Project supported by the National Natural Science Foundation of China (No. 11144010)

      the National Natural Science Foundation of China 11144010

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      • Corresponding author: Zhang Lichun, Email:phyzlc@163.com
      • Received Date: 2013-03-31
      • Revised Date: 2013-06-13
      • Published Date: 2013-11-01

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