Citation: |
Zhengguo Shang, Dongling Li, Zhiyu Wen, Xingqiang Zhao. The fabrication of vibration energy harvester arrays based on AlN piezoelectric film[J]. Journal of Semiconductors, 2013, 34(11): 114013. doi: 10.1088/1674-4926/34/11/114013
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Z G Shang, D L Li, Z Y Wen, X Q Zhao. The fabrication of vibration energy harvester arrays based on AlN piezoelectric film[J]. J. Semicond., 2013, 34(11): 114013. doi: 10.1088/1674-4926/34/11/114013.
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The fabrication of vibration energy harvester arrays based on AlN piezoelectric film
DOI: 10.1088/1674-4926/34/11/114013
More Information
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Abstract
The fabrication and measurement results of the vibration energy harvester arrays based on the piezoelectric aluminum nitride (AlN) film are presented. The structure design and fabrication process of the device are introduced. The key material, the AlN film with crystal orientation (002), was deposited by pulsed-DC magnetron sputtering and characterized by X-ray diffraction (XRD). The resonant frequency, power out, and the open circuit voltage of the device are detected. The optimized load of 80 kΩ and a remarkable maximum power out of 30.4 μW are obtained when the acceleration of 0.9g (g is standard gravity acceleration) is applied.-
Keywords:
- AlN,
- crystal orientation,
- harvester arrays,
- vibration energy
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References
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