J. Semicond. > 2013, Volume 34 > Issue 2 > 022002
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SEMICONDUCTOR PHYSICS

Extraction of terahertz emission from a grating-coupled high-electron-mobility transistor

Yu Zhou1, 2, Xinxing Li1, Renbing Tan1, 2, 3, Wei Xue4, Yongdan Huang1, Shitao Lou1, Baoshun Zhang1 and Hua Qin1,

+ Author Affiliations

 Corresponding author: Qin Hua,hqin2007@sinano.ac.cn

DOI: 10.1088/1674-4926/34/2/022002

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Abstract: In a grating-coupled high-electron-mobility transistor, weak terahertz emission with wavelength around 400 μm was observed by using a Fourier-transform spectrometer. The absolute terahertz emission power was extracted from a strong background blackbody emission by using a modulation technique. The power of terahertz emission is proportional to the drain-source current, while the power of blackbody emission has a distinct relation with the electrical power. The dependence on the drain-source bias and the gate voltage suggests that the terahertz emission is induced by accelerated electrons interacting with the grating.

Key words: two-dimensional electron system, Smith-Purcell radiation, grating coupler, high-electron-mobility transistor



[1]
Smith S J, Purcell E M. Visible light from localized surface charges moving across grating. Phys Rev, 1953, 92:1069
[2]
Tsimring S E. Electron beams and microwave vacuum electron-ics. New York:John Wiley & Sons, 2007
[3]
Mikhailov S A. Plasma instability and amplification of electromagnetic waves in low-dimensional electron systems. Phys Rev B, 1998, 58:1517 doi: 10.1103/PhysRevB.58.1517
[4]
Tsui D C, Gornik E, Logan R A. Far infrared emission from plasma oscillations of Si inversion layers. Solid State Commun, 1980, 35:875 doi: 10.1016/0038-1098(80)91043-1
[5]
Gornik E, Christanell R, Weimann G, et al. Analysis of carrier distribution function through Smith-Purcell effect in GaAs/GaAlAs heterostructures. Solid-State Electron, 1988, 31:751 doi: 10.1016/0038-1101(88)90381-4
[6]
Gornik E, Schwarz R, Lindemann G, et al. Emission spectroscopy on two-dimensional systems. Surf Sci, 1980, 98:493 doi: 10.1016/0039-6028(80)90530-0
[7]
Wirner C, Kiener C, Boxleitner W, et al. Direct observation of the hot electron distribution function in GaAs/AlGaAs heterostructures. Phys Rev Lett, 1993, 70:2609 doi: 10.1103/PhysRevLett.70.2609
[8]
Hirakawa K, Yamanaka K, Grayson M, et al. Far-infrared emission spectroscopy of hot two-dimensional plasmons in Al0.3Ga0.7As=GaAs heterojunctions. Appl Phys Lett, 1995, 67:2326 doi: 10.1063/1.114333
[9]
Otsuji T, Meziani Y M, Hanabe M, et al. Grating-bicoupled plasmon-resonant terahertz emitter fabricated with GaAs-based heterostructure material systems. Appl Phys Lett, 2006, 89:263502 doi: 10.1063/1.2410228
[10]
Otsuji T, Watanabe T, El Moutaouaki A, et al. Emission of terahertz radiation from two-dimensional electron systems in semiconductor nano-and hetero-structures. J Infrared Milli Terahz Waves, 2011, 32:629 doi: 10.1007/s10762-010-9714-0
[11]
Meziani Y M, Handa H, Knap W, et al. Room temperature terahertz emission from grating coupled two -dimensional plasmons. Appl Phys Lett, 2008, 92:201108 doi: 10.1063/1.2919097
[12]
Dyakonov M, Shur M. Shallow water analogy for a ballistic field effect transistor:new mechanism of plasma wave generation by dc current. Phys Rev Lett, 1993, 71:2465 doi: 10.1103/PhysRevLett.71.2465
[13]
Mikhailov S A. Design and theory of a graphene-based coherent terahertz emitter. arXiv:1203.3983v1(cond-mat.mes-hall), 2012 https://arxiv.org/abs/1203.3983v1
Fig. 1.  (a) A cross-section schematic of the device. (b) The optical photograph of the device and the SEM graph of the grating. (c) A schematic of the measurement setup. (d) The current–voltage characteristic measured at different gate voltages at 26 K.

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Fig. 2.  The emission spectra obtained at VDS D 1.0, 2.0, 2.5 V, and VG D 8.4 V. The dashed lines indicate the emission spectrum of an ideal blackbody spectrum at 26 K. The curves are offset by 3.0 for clarity

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Fig. 3.  (a) Normalized responses of the silicon bolometer sensing a coherent terahertz emission around 900 GHz from the BWO (open triangle), the device biased at VDS D 10 V and VG D 0 V (open circle), the device biased at VDS D 1:0 V and VG D 8:4 V (open square). Curves are fittings based on the time-constant model. The inset illustrates the overall signal consisting of both the background blackbody emission and the terahertz emission. The normalized emission power (b) and the phase (c) as a function of the drain-source bias measured at ${f_{\text{M}}}$ D 3, 163, and 403 Hz. The gate voltage is fixed at VG D 8.4 V for (b) and (c).

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Fig. 4.  (a) The extracted absolute terahertz emission power (open circle) and the corresponding drain–source current (solid curve) as a function of the drain–source bias at VG D 3:8 V. (b) The maximum absolute terahertz emission power and the efficiency as a function of the gate voltage.

DownLoad: Full-Size Img PowerPoint
[1]
Smith S J, Purcell E M. Visible light from localized surface charges moving across grating. Phys Rev, 1953, 92:1069
[2]
Tsimring S E. Electron beams and microwave vacuum electron-ics. New York:John Wiley & Sons, 2007
[3]
Mikhailov S A. Plasma instability and amplification of electromagnetic waves in low-dimensional electron systems. Phys Rev B, 1998, 58:1517 doi: 10.1103/PhysRevB.58.1517
[4]
Tsui D C, Gornik E, Logan R A. Far infrared emission from plasma oscillations of Si inversion layers. Solid State Commun, 1980, 35:875 doi: 10.1016/0038-1098(80)91043-1
[5]
Gornik E, Christanell R, Weimann G, et al. Analysis of carrier distribution function through Smith-Purcell effect in GaAs/GaAlAs heterostructures. Solid-State Electron, 1988, 31:751 doi: 10.1016/0038-1101(88)90381-4
[6]
Gornik E, Schwarz R, Lindemann G, et al. Emission spectroscopy on two-dimensional systems. Surf Sci, 1980, 98:493 doi: 10.1016/0039-6028(80)90530-0
[7]
Wirner C, Kiener C, Boxleitner W, et al. Direct observation of the hot electron distribution function in GaAs/AlGaAs heterostructures. Phys Rev Lett, 1993, 70:2609 doi: 10.1103/PhysRevLett.70.2609
[8]
Hirakawa K, Yamanaka K, Grayson M, et al. Far-infrared emission spectroscopy of hot two-dimensional plasmons in Al0.3Ga0.7As=GaAs heterojunctions. Appl Phys Lett, 1995, 67:2326 doi: 10.1063/1.114333
[9]
Otsuji T, Meziani Y M, Hanabe M, et al. Grating-bicoupled plasmon-resonant terahertz emitter fabricated with GaAs-based heterostructure material systems. Appl Phys Lett, 2006, 89:263502 doi: 10.1063/1.2410228
[10]
Otsuji T, Watanabe T, El Moutaouaki A, et al. Emission of terahertz radiation from two-dimensional electron systems in semiconductor nano-and hetero-structures. J Infrared Milli Terahz Waves, 2011, 32:629 doi: 10.1007/s10762-010-9714-0
[11]
Meziani Y M, Handa H, Knap W, et al. Room temperature terahertz emission from grating coupled two -dimensional plasmons. Appl Phys Lett, 2008, 92:201108 doi: 10.1063/1.2919097
[12]
Dyakonov M, Shur M. Shallow water analogy for a ballistic field effect transistor:new mechanism of plasma wave generation by dc current. Phys Rev Lett, 1993, 71:2465 doi: 10.1103/PhysRevLett.71.2465
[13]
Mikhailov S A. Design and theory of a graphene-based coherent terahertz emitter. arXiv:1203.3983v1(cond-mat.mes-hall), 2012 https://arxiv.org/abs/1203.3983v1

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    Received: 02 July 2012 Revised: 24 September 2012 Online: Published: 01 February 2013

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      Article Navigation >  Journal of Semiconductors  > 2013  >  34(2): 022002
      Yu Zhou, Xinxing Li, Renbing Tan, Wei Xue, Yongdan Huang, Shitao Lou, Baoshun Zhang, Hua Qin. Extraction of terahertz emission from a grating-coupled high-electron-mobility transistor[J]. Journal of Semiconductors, 2013, 34(2): 022002. doi: 10.1088/1674-4926/34/2/022002 ****Y Zhou, X X Li, R B Tan, W Xue, Y D Huang, S T Lou, B S Zhang, H Qin. Extraction of terahertz emission from a grating-coupled high-electron-mobility transistor[J]. J. Semicond., 2013, 34(2): 022002. doi: 10.1088/1674-4926/34/2/022002.
      Citation:
      Yu Zhou, Xinxing Li, Renbing Tan, Wei Xue, Yongdan Huang, Shitao Lou, Baoshun Zhang, Hua Qin. Extraction of terahertz emission from a grating-coupled high-electron-mobility transistor[J]. Journal of Semiconductors, 2013, 34(2): 022002. doi: 10.1088/1674-4926/34/2/022002 ****
      Y Zhou, X X Li, R B Tan, W Xue, Y D Huang, S T Lou, B S Zhang, H Qin. Extraction of terahertz emission from a grating-coupled high-electron-mobility transistor[J]. J. Semicond., 2013, 34(2): 022002. doi: 10.1088/1674-4926/34/2/022002.
      shu

      Extraction of terahertz emission from a grating-coupled high-electron-mobility transistor

      DOI: 10.1088/1674-4926/34/2/022002
      • 1.

        Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academyof Sciences, Suzhou 215123, China

      • 2.

        University of Chinese Academy of Sciences, Beijing 100049, China

      • 3.

        Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

      • 4.

        i-Lab, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China

      Funds:

      the National Natural Science Foundation of China 60871077

      the Knowledge Innovation Program of the Chinese Academy of Sciences Y0BAQ31001

      the National Basic Research Program of China G2009CB929303

      Project supported by the National Basic Research Program of China (No. G2009CB929303), the Knowledge Innovation Program of the Chinese Academy of Sciences (No. Y0BAQ31001), and the National Natural Science Foundation of China (No. 60871077)

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      • Corresponding author: Qin Hua,hqin2007@sinano.ac.cn
      • Received Date: 2012-07-02
      • Revised Date: 2012-09-24
      • Published Date: 2013-02-01

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