Fig. 1.
Refractive index of GaAs.
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| Citation: |
J.O. Akinlami, A.O. Ashamu. Optical properties of GaAs[J]. Journal of Semiconductors, 2013, 34(3): 032002. doi: 10.1088/1674-4926/34/3/032002
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J.O. Akinlami, A.O. Ashamu. Optical properties of GaAs[J]. J. Semicond., 2013, 34(3): 032002. doi: 10.1088/1674-4926/34/3/032002.
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Abstract
We have investigated the optical properties of gallium arsenide (GaAs) in the photon energy range 0.6-6.0 eV. We obtained a refractive index which has a maximum value of 5.0 at a photon energy of 3.1 eV; an extinction coefficient which has a maximum value of 4.2 at a photon energy of 5.0 eV; the dielectric constant, the real part of the complex dielectric constant has a maximum value of 24 at a photon energy of 2.8 eV and the imaginary part of the complex dielectric constant has a maximum value of 26.0 at a photon energy of 4.8 eV; the transmittance which has a maximum value of 0.22 at a photon energy of 4.0 eV; the absorption coefficient which has a maximum value of 0.22×108 m-1 at a photon energy of 4.8 eV, the reflectance which has a maximum value of 0.68 at 5.2eV; the reflection coefficient which has a maximum value of 0.82 at a photon energy of 5.2 eV; the real part of optical conductivity has a maximum value of 14.2×1015 at 4.8 eV and the imaginary part of the optical conductivity has a maximum value of 6.8×1015 at 5.0 eV. The values obtained for the optical properties of GaAs are in good agreement with other results. -
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