Fig. 1.
XRD spectra of the nano-polysilicon thin films deposited at 620 ℃ and thin films at different annealing temperatures. (a) 55 nm. (b) 90 nm.
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Xiaofeng Zhao, Dianzhong Wen, Cuicui Zhuang, Jingya Cao, Zhiqiang Wang. Fabrication and characteristics of magnetic field sensors based on nano-polysilicon thin-film transistors[J]. Journal of Semiconductors, 2013, 34(3): 036001. doi: 10.1088/1674-4926/34/3/036001
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X F Zhao, D Z Wen, C C Zhuang, J Y Cao, Z Q Wang. Fabrication and characteristics of magnetic field sensors based on nano-polysilicon thin-film transistors[J]. J. Semicond., 2013, 34(3): 036001. doi: 10.1088/1674-4926/34/3/036001.
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Fabrication and characteristics of magnetic field sensors based on nano-polysilicon thin-film transistors
DOI: 10.1088/1674-4926/34/3/036001
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Abstract
A magnetic field sensor based on nano-polysilicon thin films transistors (TFTs) with Hall probes is proposed. The magnetic field sensors are fabricated on < 100> orientation high resistivity (ρ>500 Ω·cm) silicon substrates by using CMOS technology, which adopt nano-polysilicon thin films with thicknesses of 90 nm and heterojunction interfaces between the nano-polysilicon thin films and the high resistivity silicon substrates as the sensing layers. The experimental results show that when VDS=5.0 V, the magnetic sensitivities of magnetic field sensors based on nano-polysilicon TFTs with length-width ratios of 160 μm/80 μm, 320 μm/80 μm and 480 μm/80 μm are 78 mV/T, 55 mV/T and 34 mV/T, respectively. Under the same conditions, the magnetic sensitivity of the obtained magnetic field sensor is significantly improved in comparison with a Hall magnetic field sensor adopting silicon as the sensing layers. -
References
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