Effect of p-d exchange with an itinerant carrier in a GaMnAs quantum dot

D. Lalitha; A. John Peter

doi:10.1088/1674-4926/34/7/072001

J. Semicond. > 2013, Volume 34 > Issue 7 > 072001

SEMICONDUCTOR PHYSICS

Effect of p-d exchange with an itinerant carrier in a GaMnAs quantum dot

D. Lalitha¹ and A. John Peter^2,

+ Author Affiliations

Corresponding author: A. John Peter, Email:a.john.peter@gmail.com

DOI: 10.1088/1674-4926/34/7/072001

Abstract: Hydrogenic acceptor binding energy as a function of dot radius in a GaMnAs/Ga_0.6Al_0.4As quantum dot is calculated including the exchange interaction of Mn alloy content with an itinerant carrier. Calculations are performed by varying its dot radius, for various Mn alloy contents in GaMnAs quantum dot within a single band effective mass approximation using variational method. The spin polaronic energy of the acceptor impurity for different Mn²⁺ is evaluated for different dot radii using a mean field theory in the presence of magnetic field strength. The magnetization is computed in the influence of magnetic field and the Mn ions. The effective g-factor of the valence band electron with the inclusion of effects of Mn ion impurities is found in the influence of the magnetic field. The exchange coupling constant is calculated for various magnetic field strengths. The results show that the p-d exchange interaction in the GaMnAs/Ga_0.6Al_0.4As quantum dot has a strong dependence on spatial confinement, effect of magnetic field strength and the Mn alloy content. Our results are in good agreement with the other investigators.

Key words: quantum dot, acceptor, diluted magnetic semiconductors

References

[1]	Dietl T, Ohno H, Matsukura F. Ferromagnetic semiconductor heterostructures for spintronics. IEEE Trans Electron Devices, 2007, 54:945 doi: 10.1109/TED.2007.894622
[2]	Ku K C, Potashnik S J, Wang R F, et al. Highly enhanced Curie temperature in low-temperature annealed[Ga, Mn]As epilayers. Appl Phys Lett, 2003, 82:2302 doi: 10.1063/1.1564285
[3]	Ohno H, Chiba D, Matsukura F, et al. Electric-field control of ferromagnetism. Nature, 2000, 408:944 doi: 10.1038/35050040
[4]	Wang J, Sun C, Hashimoto Y, et al. Ultrafast magneto-optics in ferromagnetic Ⅲ-Ⅴ semiconductors. J Phys:Condens Matter, 2006, 18:R501
[5]	Hashimoto Y, Kobayashi S, Munekata H. Photoinfduced precession of magnetization in ferromagnetic (Ga, Mn)As. Phys Rev Lett, 2008, 100:067202 doi: 10.1103/PhysRevLett.100.067202
[6]	Nazmul A M, Sugahara S, Tanaka M. Temperature ferromagnetism in GaAs-based heterostructures with Mn d doping. Phys Rev B, 2003, 67:241308 doi: 10.1103/PhysRevB.67.241308
[7]	Jungwirth T, Wang K Y, Mašek J, et al. Prospects for high temperature ferromagnetism in {(Ga, Mn)As} semiconductors. Phys Rev B, 2005, 72:165204 doi: 10.1103/PhysRevB.72.165204
[8]	Ohno Y, Arata I, Matsukura F, et al. Valence band barrier at (Ga, Mn)As/GaAs interfaces. Physica E, 2002, 13:521 doi: 10.1016/S1386-9477(02)00185-6
[9]	Ohno Y, Young D K, Beschoten B, et al. Electrical spin injection in a ferromagnetic semiconductor heterostructure. Nature, 1999, 402:790 doi: 10.1038/45509
[10]	Breya L, Tejedor C, Fernández-Rossier J. Tunnel magnetoresistance in GaMnAs:going beyond Julliére formula. Appl Phys Lett, 2004, 85:1996 doi: 10.1063/1.1789241
[11]	Das Sarma S, Hwang E H, Kaminski A. Magnetotransport properties of a polarization-doped three-dimensional electron. Phys Rev B, 2003, 67:155201 doi: 10.1103/PhysRevB.67.155201
[12]	Jungwirth T, Sinova J, MacDonald A H, et al. Character of states near the Fermi level in (Ga, Mn)As:impurity to valence band crossover. Phys Rev B, 2007, 76:125206 doi: 10.1103/PhysRevB.76.125206
[13]	Dietl T. Origin of ferromagnetic response in diluted magnetic semiconductors and oxides. J Phys:Condens Matter, 2007, 19:165204 doi: 10.1088/0953-8984/19/16/165204
[14]	Schulthess T C, Temmerman W M, Szotek Z, et al. First-principles electronic structure of Mn-doped GaAs, GaP, and GaN semiconductors. J Phys:Condens Matter, 2007, 19:165207 doi: 10.1088/0953-8984/19/16/165207
[15]	Burch K S, Shrekenhamer D B, Singley E J, et al. High temperature ferromagnetic semiconductor. Phys Rev Lett, 2006, 97:087208 doi: 10.1103/PhysRevLett.97.087208
[16]	Simserides C. The density of states and the electron concentration of a double-heterojunction system subjected to an in-plane magnetic field. J Phys:Condens Matter, 1999, 11:5131 doi: 10.1088/0953-8984/11/26/314
[17]	Snelling M J, Flinn G P, Plaut A S, et al. Magnetic g factor of electrons in GaAs/Al_xGa_1-xAs quantum wells. Phys Rev B, 1991, 44:11345 doi: 10.1103/PhysRevB.44.11345
[18]	Das Sarma S, Hwang E H, Kaminski A. Temperature-dependent magnetization in diluted magnetic semiconductors. Phys Rev B, 2003, 67:155201 doi: 10.1103/PhysRevB.67.155201
[19]	Gaj J A, Planel R, Fishman G. Relation of magneto-optical properties of free excitons to spin alignment of Mn²⁺ ions in Cd_1-xMn_xTe. Solid-State Commun, 1979, 29:435
[20]	Béal-Monod M T, Weiner R A. Negative magnetoresistivity in dilute alloys. Phys Rev, 1968, 170:552 doi: 10.1103/PhysRev.170.552
[21]	Dietl T, Ohno H, Matsukura F. Hole-mediated ferromagnetism in tetrahedrally coordinated semiconductors. Phys Rev B, 2001, 63:195205 doi: 10.1103/PhysRevB.63.195205
[22]	Gel'mont B L, D'yakonov M I. Impurity states in zero gap semiconductors. Zh Eksp Theor Fiz, 1972, 62:713
[23]	Sun B, Jiang D, Sun Z, et al. Photoinduced spin alignment of the magnetic ions in (Ga, Mn)As. J Appl Phys, 2006, 100:083104 doi: 10.1063/1.2358407
[24]	Zhou R, Sun B Q, Ruan X Z, et al. Temperature dependence of effective g factor in diluted magnetic semiconductor (Ga, Mn)As. J Appl Phys, 2008, 103:053901 doi: 10.1063/1.2842400
[25]	Camilleri C, Teppe F, Scalbert D, et al. Electron and hole spin relaxation in modulation-doped CdMnTe quantum wells. Phys Rev B, 2001, 64:085331 doi: 10.1103/PhysRevB.64.085331

Fig. 1. Variation of binding energy of a hydrogenic acceptor impurity as functions magnetic field strength and the Mn ally content in a GaMnAs/Ga$_{0.4}$Al$_{0.6}$As quantum dot for a two different dot radii, (upper lines for 60 Å and lower lines for 1000 Å)

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Fig. 2. Variation of binding energy of a hydrogenic acceptor impurity as functions magnetic field strength and the Mn ally content in a GaMnAs/Ga$_{0.4}$Al$_{0.6}$As quantum dot for a constant dot radius 60 Å

DownLoad: Full-Size Img PowerPoint

Fig. 3. Variation of spin polaronic shift as a function of dot radius for various Mn alloy content with the constant magnetic field strength, B = 10 T and the insert figure shows the spin polaron energy as a function of dot radius for different magnetic field strengths with a fixed Mn alloy content, 0.04

DownLoad: Full-Size Img PowerPoint

Fig. 4. Variation of relaxation time of spin up and spin down carriers in a GaMnAs/Ga$_{0.4}$Al$_{0.6}$As quantum dot for a constant dot radius 60 Å

DownLoad: Full-Size Img PowerPoint

Fig. 5. Variation of magnetization as a function of magnetic field for a GaMnAs/Ga$_{0.4}$Al$_{0.6}$As quantum dot with various Mn alloy content for a constant dot radius, 60 Å

DownLoad: Full-Size Img PowerPoint

Fig. 6. Variation of effective g-factor as a function of magnetic field strength for different Mn concentrations in a GaMnAs/Ga$_{0.4}$Al$_{0.6}$As quantum dot for a constant dot radius, 60 Å

DownLoad: Full-Size Img PowerPoint

[1]	Dietl T, Ohno H, Matsukura F. Ferromagnetic semiconductor heterostructures for spintronics. IEEE Trans Electron Devices, 2007, 54:945 doi: 10.1109/TED.2007.894622
[2]	Ku K C, Potashnik S J, Wang R F, et al. Highly enhanced Curie temperature in low-temperature annealed[Ga, Mn]As epilayers. Appl Phys Lett, 2003, 82:2302 doi: 10.1063/1.1564285
[3]	Ohno H, Chiba D, Matsukura F, et al. Electric-field control of ferromagnetism. Nature, 2000, 408:944 doi: 10.1038/35050040
[4]	Wang J, Sun C, Hashimoto Y, et al. Ultrafast magneto-optics in ferromagnetic Ⅲ-Ⅴ semiconductors. J Phys:Condens Matter, 2006, 18:R501
[5]	Hashimoto Y, Kobayashi S, Munekata H. Photoinfduced precession of magnetization in ferromagnetic (Ga, Mn)As. Phys Rev Lett, 2008, 100:067202 doi: 10.1103/PhysRevLett.100.067202
[6]	Nazmul A M, Sugahara S, Tanaka M. Temperature ferromagnetism in GaAs-based heterostructures with Mn d doping. Phys Rev B, 2003, 67:241308 doi: 10.1103/PhysRevB.67.241308
[7]	Jungwirth T, Wang K Y, Mašek J, et al. Prospects for high temperature ferromagnetism in {(Ga, Mn)As} semiconductors. Phys Rev B, 2005, 72:165204 doi: 10.1103/PhysRevB.72.165204
[8]	Ohno Y, Arata I, Matsukura F, et al. Valence band barrier at (Ga, Mn)As/GaAs interfaces. Physica E, 2002, 13:521 doi: 10.1016/S1386-9477(02)00185-6
[9]	Ohno Y, Young D K, Beschoten B, et al. Electrical spin injection in a ferromagnetic semiconductor heterostructure. Nature, 1999, 402:790 doi: 10.1038/45509
[10]	Breya L, Tejedor C, Fernández-Rossier J. Tunnel magnetoresistance in GaMnAs:going beyond Julliére formula. Appl Phys Lett, 2004, 85:1996 doi: 10.1063/1.1789241
[11]	Das Sarma S, Hwang E H, Kaminski A. Magnetotransport properties of a polarization-doped three-dimensional electron. Phys Rev B, 2003, 67:155201 doi: 10.1103/PhysRevB.67.155201
[12]	Jungwirth T, Sinova J, MacDonald A H, et al. Character of states near the Fermi level in (Ga, Mn)As:impurity to valence band crossover. Phys Rev B, 2007, 76:125206 doi: 10.1103/PhysRevB.76.125206
[13]	Dietl T. Origin of ferromagnetic response in diluted magnetic semiconductors and oxides. J Phys:Condens Matter, 2007, 19:165204 doi: 10.1088/0953-8984/19/16/165204
[14]	Schulthess T C, Temmerman W M, Szotek Z, et al. First-principles electronic structure of Mn-doped GaAs, GaP, and GaN semiconductors. J Phys:Condens Matter, 2007, 19:165207 doi: 10.1088/0953-8984/19/16/165207
[15]	Burch K S, Shrekenhamer D B, Singley E J, et al. High temperature ferromagnetic semiconductor. Phys Rev Lett, 2006, 97:087208 doi: 10.1103/PhysRevLett.97.087208
[16]	Simserides C. The density of states and the electron concentration of a double-heterojunction system subjected to an in-plane magnetic field. J Phys:Condens Matter, 1999, 11:5131 doi: 10.1088/0953-8984/11/26/314
[17]	Snelling M J, Flinn G P, Plaut A S, et al. Magnetic g factor of electrons in GaAs/Al_xGa_1-xAs quantum wells. Phys Rev B, 1991, 44:11345 doi: 10.1103/PhysRevB.44.11345
[18]	Das Sarma S, Hwang E H, Kaminski A. Temperature-dependent magnetization in diluted magnetic semiconductors. Phys Rev B, 2003, 67:155201 doi: 10.1103/PhysRevB.67.155201
[19]	Gaj J A, Planel R, Fishman G. Relation of magneto-optical properties of free excitons to spin alignment of Mn²⁺ ions in Cd_1-xMn_xTe. Solid-State Commun, 1979, 29:435
[20]	Béal-Monod M T, Weiner R A. Negative magnetoresistivity in dilute alloys. Phys Rev, 1968, 170:552 doi: 10.1103/PhysRev.170.552
[21]	Dietl T, Ohno H, Matsukura F. Hole-mediated ferromagnetism in tetrahedrally coordinated semiconductors. Phys Rev B, 2001, 63:195205 doi: 10.1103/PhysRevB.63.195205
[22]	Gel'mont B L, D'yakonov M I. Impurity states in zero gap semiconductors. Zh Eksp Theor Fiz, 1972, 62:713
[23]	Sun B, Jiang D, Sun Z, et al. Photoinduced spin alignment of the magnetic ions in (Ga, Mn)As. J Appl Phys, 2006, 100:083104 doi: 10.1063/1.2358407
[24]	Zhou R, Sun B Q, Ruan X Z, et al. Temperature dependence of effective g factor in diluted magnetic semiconductor (Ga, Mn)As. J Appl Phys, 2008, 103:053901 doi: 10.1063/1.2842400
[25]	Camilleri C, Teppe F, Scalbert D, et al. Electron and hole spin relaxation in modulation-doped CdMnTe quantum wells. Phys Rev B, 2001, 64:085331 doi: 10.1103/PhysRevB.64.085331

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Received: 27 November 2012 Revised: Online: Published: 01 July 2013

Article Navigation > Journal of Semiconductors > 2013 > 34(7): 072001

D. Lalitha, A. John Peter. Effect of p-d exchange with an itinerant carrier in a GaMnAs quantum dot[J]. Journal of Semiconductors, 2013, 34(7): 072001. doi: 10.1088/1674-4926/34/7/072001 ****D Lalitha, A J Peter. Effect of p-d exchange with an itinerant carrier in a GaMnAs quantum dot[J]. J. Semicond., 2013, 34(7): 072001. doi: 10.1088/1674-4926/34/7/072001.

Citation:

D. Lalitha, A. John Peter. Effect of p-d exchange with an itinerant carrier in a GaMnAs quantum dot[J]. Journal of Semiconductors, 2013, 34(7): 072001. doi: 10.1088/1674-4926/34/7/072001 ****

D Lalitha, A J Peter. Effect of p-d exchange with an itinerant carrier in a GaMnAs quantum dot[J]. J. Semicond., 2013, 34(7): 072001. doi: 10.1088/1674-4926/34/7/072001.

Citation:

D. Lalitha, A. John Peter. Effect of p-d exchange with an itinerant carrier in a GaMnAs quantum dot[J]. Journal of Semiconductors, 2013, 34(7): 072001. doi: 10.1088/1674-4926/34/7/072001 ****

D Lalitha, A J Peter. Effect of p-d exchange with an itinerant carrier in a GaMnAs quantum dot[J]. J. Semicond., 2013, 34(7): 072001. doi: 10.1088/1674-4926/34/7/072001.

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Effect of p-d exchange with an itinerant carrier in a GaMnAs quantum dot

DOI: 10.1088/1674-4926/34/7/072001

D. Lalitha¹,
A. John Peter^2,

1.
Department of Physics, GTN College, Dindigul-624 005, India
2.
Department of Physics, Government Arts College, Melur-625 106, India

More Information

Corresponding author: A. John Peter, Email:a.john.peter@gmail.com
Received Date: 2012-11-27
Published Date: 2013-07-01

Abstract

Abstract

Hydrogenic acceptor binding energy as a function of dot radius in a GaMnAs/Ga_0.6Al_0.4As quantum dot is calculated including the exchange interaction of Mn alloy content with an itinerant carrier. Calculations are performed by varying its dot radius, for various Mn alloy contents in GaMnAs quantum dot within a single band effective mass approximation using variational method. The spin polaronic energy of the acceptor impurity for different Mn²⁺ is evaluated for different dot radii using a mean field theory in the presence of magnetic field strength. The magnetization is computed in the influence of magnetic field and the Mn ions. The effective g-factor of the valence band electron with the inclusion of effects of Mn ion impurities is found in the influence of the magnetic field. The exchange coupling constant is calculated for various magnetic field strengths. The results show that the p-d exchange interaction in the GaMnAs/Ga_0.6Al_0.4As quantum dot has a strong dependence on spatial confinement, effect of magnetic field strength and the Mn alloy content. Our results are in good agreement with the other investigators.
- quantum dot,
- acceptor,
- diluted magnetic semiconductors

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References(25)

References

[1]	Dietl T, Ohno H, Matsukura F. Ferromagnetic semiconductor heterostructures for spintronics. IEEE Trans Electron Devices, 2007, 54:945 doi: 10.1109/TED.2007.894622
[2]	Ku K C, Potashnik S J, Wang R F, et al. Highly enhanced Curie temperature in low-temperature annealed[Ga, Mn]As epilayers. Appl Phys Lett, 2003, 82:2302 doi: 10.1063/1.1564285
[3]	Ohno H, Chiba D, Matsukura F, et al. Electric-field control of ferromagnetism. Nature, 2000, 408:944 doi: 10.1038/35050040
[4]	Wang J, Sun C, Hashimoto Y, et al. Ultrafast magneto-optics in ferromagnetic Ⅲ-Ⅴ semiconductors. J Phys:Condens Matter, 2006, 18:R501
[5]	Hashimoto Y, Kobayashi S, Munekata H. Photoinfduced precession of magnetization in ferromagnetic (Ga, Mn)As. Phys Rev Lett, 2008, 100:067202 doi: 10.1103/PhysRevLett.100.067202
[6]	Nazmul A M, Sugahara S, Tanaka M. Temperature ferromagnetism in GaAs-based heterostructures with Mn d doping. Phys Rev B, 2003, 67:241308 doi: 10.1103/PhysRevB.67.241308
[7]	Jungwirth T, Wang K Y, Mašek J, et al. Prospects for high temperature ferromagnetism in {(Ga, Mn)As} semiconductors. Phys Rev B, 2005, 72:165204 doi: 10.1103/PhysRevB.72.165204
[8]	Ohno Y, Arata I, Matsukura F, et al. Valence band barrier at (Ga, Mn)As/GaAs interfaces. Physica E, 2002, 13:521 doi: 10.1016/S1386-9477(02)00185-6
[9]	Ohno Y, Young D K, Beschoten B, et al. Electrical spin injection in a ferromagnetic semiconductor heterostructure. Nature, 1999, 402:790 doi: 10.1038/45509
[10]	Breya L, Tejedor C, Fernández-Rossier J. Tunnel magnetoresistance in GaMnAs:going beyond Julliére formula. Appl Phys Lett, 2004, 85:1996 doi: 10.1063/1.1789241
[11]	Das Sarma S, Hwang E H, Kaminski A. Magnetotransport properties of a polarization-doped three-dimensional electron. Phys Rev B, 2003, 67:155201 doi: 10.1103/PhysRevB.67.155201
[12]	Jungwirth T, Sinova J, MacDonald A H, et al. Character of states near the Fermi level in (Ga, Mn)As:impurity to valence band crossover. Phys Rev B, 2007, 76:125206 doi: 10.1103/PhysRevB.76.125206
[13]	Dietl T. Origin of ferromagnetic response in diluted magnetic semiconductors and oxides. J Phys:Condens Matter, 2007, 19:165204 doi: 10.1088/0953-8984/19/16/165204
[14]	Schulthess T C, Temmerman W M, Szotek Z, et al. First-principles electronic structure of Mn-doped GaAs, GaP, and GaN semiconductors. J Phys:Condens Matter, 2007, 19:165207 doi: 10.1088/0953-8984/19/16/165207
[15]	Burch K S, Shrekenhamer D B, Singley E J, et al. High temperature ferromagnetic semiconductor. Phys Rev Lett, 2006, 97:087208 doi: 10.1103/PhysRevLett.97.087208
[16]	Simserides C. The density of states and the electron concentration of a double-heterojunction system subjected to an in-plane magnetic field. J Phys:Condens Matter, 1999, 11:5131 doi: 10.1088/0953-8984/11/26/314
[17]	Snelling M J, Flinn G P, Plaut A S, et al. Magnetic g factor of electrons in GaAs/Al_xGa_1-xAs quantum wells. Phys Rev B, 1991, 44:11345 doi: 10.1103/PhysRevB.44.11345
[18]	Das Sarma S, Hwang E H, Kaminski A. Temperature-dependent magnetization in diluted magnetic semiconductors. Phys Rev B, 2003, 67:155201 doi: 10.1103/PhysRevB.67.155201
[19]	Gaj J A, Planel R, Fishman G. Relation of magneto-optical properties of free excitons to spin alignment of Mn²⁺ ions in Cd_1-xMn_xTe. Solid-State Commun, 1979, 29:435
[20]	Béal-Monod M T, Weiner R A. Negative magnetoresistivity in dilute alloys. Phys Rev, 1968, 170:552 doi: 10.1103/PhysRev.170.552
[21]	Dietl T, Ohno H, Matsukura F. Hole-mediated ferromagnetism in tetrahedrally coordinated semiconductors. Phys Rev B, 2001, 63:195205 doi: 10.1103/PhysRevB.63.195205
[22]	Gel'mont B L, D'yakonov M I. Impurity states in zero gap semiconductors. Zh Eksp Theor Fiz, 1972, 62:713
[23]	Sun B, Jiang D, Sun Z, et al. Photoinduced spin alignment of the magnetic ions in (Ga, Mn)As. J Appl Phys, 2006, 100:083104 doi: 10.1063/1.2358407
[24]	Zhou R, Sun B Q, Ruan X Z, et al. Temperature dependence of effective g factor in diluted magnetic semiconductor (Ga, Mn)As. J Appl Phys, 2008, 103:053901 doi: 10.1063/1.2842400
[25]	Camilleri C, Teppe F, Scalbert D, et al. Electron and hole spin relaxation in modulation-doped CdMnTe quantum wells. Phys Rev B, 2001, 64:085331 doi: 10.1103/PhysRevB.64.085331

Effect of p-d exchange with an itinerant carrier in a GaMnAs quantum dot

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