Degradation of the front and back channels in a deep submicron partially depleted SOI NMOSFET under off-state stress

Qiwen Zheng; Xuefeng Yu; Jiangwei Cui; Qi Guo; Zhongchao Cong; Xingyao Zhang; Wei Deng; Xiaofu Zhang; Zhengxin Wu

doi:10.1088/1674-4926/34/7/074008

J. Semicond. > 2013, Volume 34 > Issue 7 > 074008

SEMICONDUCTOR DEVICES

Degradation of the front and back channels in a deep submicron partially depleted SOI NMOSFET under off-state stress

Qiwen Zheng^{1, 2, 3}, Xuefeng Yu^{1, 2,}, Jiangwei Cui^{1, 2}, Qi Guo^{1, 2}, Zhongchao Cong^{1, 2, 3}, Xingyao Zhang^{1, 2, 3}, Wei Deng^{1, 2, 3}, Xiaofu Zhang^{1, 2, 3} and Zhengxin Wu^{1, 2, 3}

+ Author Affiliations

Corresponding author: Yu Xuefeng, Email:yuxf@ms.xjb.ac.cn

DOI: 10.1088/1674-4926/34/7/074008

Abstract: The hot-carrier effect characteristic in a deep submicron partially depleted SOI NMOSFET is investigated. Obvious hot-carrier degradation is observed under off-state stress. The hot-carrier damage is supposed to be induced by the parasitic bipolar effects of a float SOI device. The back channel also suffers degradation from the hot carrier in the drain depletion region as well as the front channel. At low gate voltage, there is a hump in the sub-threshold curve of the back gate transistor, and it does not shift in the same way as the main transistor under stress. While under the same condition, there is a more severe hot-carrier effect with a shorter channel transistor. The reasons for those phenomena are discussed in detail.

Key words: silicon-on-insulator, hot-carrier effect, hump, back gate

References

[1]	Schwank J R, Ferlet-Cavrois V, Shaneyfelt M R. Radiation effects in SOI technologies. IEEE Trans Nucl Sci, 2003, 50(3):522 doi: 10.1109/TNS.2003.812930
[2]	Cui J W, Yu X F, Ren D Y, et al. Double humps and radiation effects of SOI NMOSFET. Journal of Semiconductors, 2011, 32(6):064006 doi: 10.1088/1674-4926/32/6/064006
[3]	Liu M X, Han Z S, Bi J S, et al. Effect of total ionizing dose radiation on the 0.25μm RF PDSOI nMOSFETs with thin gate oxide. Journal of Semiconductors, 2009, 30(1):014004 doi: 10.1088/1674-4926/30/1/014004
[4]	Cristoloveanu S, Li S. Electrical characterization of silicon-on-insulator materials and devices. Boston:Kluwer Academic Publishers, 1995 doi: 10.1007%2F978-1-4615-2245-4
[5]	Colinge J P. Hot-electron effects in silicon-on-insulator n-channel MOSFET's. IEEE Trans Electron Devices, 1987, ED-34:2173 http://ieeexplore.ieee.org/document/1486924/
[6]	Chen J J, Chen S M, Liang B, et al. Hot carrier effects of SOI NMOS. Journal of Semiconductors, 2010, 31(7):074006 doi: 10.1088/1674-4926/31/7/074006
[7]	Shing H R, Emmanuel R, Jean L P. Hot-carrier effects and lifetime prediction in off-state operation of deep submicron SOI N-MOSFET's. IEEE Trans Electron Devices, 1998, 45(5):1140 doi: 10.1109/16.669572
[8]	Rafi J M, Simoen E, Mercha A, et al. Impact of hot-carrier stress on gate-induced floating body effects and drain current transients of thin gate oxide partially depleted SOI nMOSFETs. Microelectron Reliab, 2005, (49):1536 http://adsabs.harvard.edu/abs/2005SSEle..49.1536R
[9]	He J, Zhang X, Huang R, et al. A refined forward gated-diode method for separating front channel hot-carrier-stress induced front and back gate interface and oxide traps in SOI NMOSFETs. Semicond Sci Technol, 2002, 17:487 doi: 10.1088/0268-1242/17/5/314
[10]	Thierry O, Sorin C, Girard B. Hot-carrier-induced degradation of the back interface in short-channel silicon-on-insulator MOSFET's. IEEE Electron Device Lett, 1991, 12(6):290 doi: 10.1109/55.82064
[11]	Eiji T, Cary Y Y, Akemi M H. Hot carrier effects in MOS device. Academic Press Inc, 1995 http://www.sciencedirect.com/science/article/pii/0026271493900819
[12]	Mercha A, Rafí J M, Simoen E. Linear kink effect induced by electron valence band tunneling in ultrathin gate oxide bulk and SOI MOSFETs. IEEE Trans Electron Devices, 2003, 50(7):1657 http://ieeexplore.ieee.org/document/1217253/
[13]	Cristoloveanu S, Gulwadi S M, Ioannou D E. Hot-electron-induced degradation of front and back channels in partially and fully depleted SIMOX MOSFET's. IEEE Electron Device Lett, 1992, 13(12):603 doi: 10.1109/55.192858
[14]	Jian C, Tung Y C, Ping K K, et al. Gate current in off-state MOSFET. IEEE Electron Device Lett, 1989, 10(5):203 doi: 10.1109/55.31721
[15]	Jian C, Fariborz A, Ping K, et al. The enhancement of gate-induced-drain-leakage (GIDL) current in short-channel SOI MOSFET and its application in measuring lateral bipolar current gain β. IEEE Electron Device Lett, 1992, 13(11):572 doi: 10.1109/55.192844
[16]	Jin Y C, Jerry G F. Analysis and control of floating-body bipolar effects in fully depleted submicrometer SOI MOSFET's. IEEE Electron Device, 1991, 38(6):1384 doi: 10.1109/16.81630
[17]	Jian C, Fariborz A, Hsing J W, et al. An accurate model of thin film SOI MOSFET breakdown voltage. Technical Digest of International Electron Devices Meeting, 1991:671 http://ieeexplore.ieee.org/document/235333/?arnumber=235333
[18]	Sinha S P, Franklin L D, Dimitris E I. Time dependence power laws of hot carrier degradation in SOI MOSFETS. Proceedings IEEE International SOI Conference, 1996 http://ieeexplore.ieee.org/document/552472/?reload=true&arnumber=552472&count=85&index=8
[19]	Fenouillet C, Faynot O, Tabone C. Characterization and simulation of STI isolation for 0.1μm partially-depleted SOI devices. IEEE International SOI Conference, 2001:87
[20]	Ning B, Bi D, Huang H. Bias dependence of TID radiation responses of 0.13μm partially depleted SOI NMOSFETs. Microelectron Reliab, 2013, 53(2):259 doi: 10.1016/j.microrel.2012.08.005
[21]	Choi J Y, Fossum J G. Analysis and control of floating-body bipolar effects in fully depleted submicrometer SOI MOSFET's. IEEE Trans Electron Devices, 1991, 38(6):1384 doi: 10.1109/16.81630

Fig. 1. Sub-threshold curves changing with stress for (a) front gate and (b) back gate transistor.

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Fig. 2. Transconductance curves changing with stress for (a) front gate and (b) back gate transistors.

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Fig. 3. Output characteristic curves changing with stress for (a) front gate and (b) back gate transistors.

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Fig. 4. Cross sectional view of the PD SOI NMOSFET under off-state operation.

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Fig. 5. Output characteristic under off-state of $W/L=$ 10 $\mu$m/0.13$\mu $m transistor for (a) float body and (b) touch body.

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Fig. 6. Sub-threshold curves after 10000 s stress of $W/L=$ 10 $\mu $m/0.13 $\mu $m touch body transistor for (a) front gate and (b) back gate.

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Fig. 7. Parameter shift percent with stress time for (a) front gate and (b) back gate transistor.

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Fig. 8. Sub-threshold curves changing with stress for a back gate transistor in logarithmic coordinate.

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Fig. 9. Schematic diagram of the STI corner region cross-section for our sample.

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Fig. 10. (a) Maximum transconductance and (b) Saturation current shift percentage with gate length after 5000 s stress.

DownLoad: Full-Size Img PowerPoint

[1]	Schwank J R, Ferlet-Cavrois V, Shaneyfelt M R. Radiation effects in SOI technologies. IEEE Trans Nucl Sci, 2003, 50(3):522 doi: 10.1109/TNS.2003.812930
[2]	Cui J W, Yu X F, Ren D Y, et al. Double humps and radiation effects of SOI NMOSFET. Journal of Semiconductors, 2011, 32(6):064006 doi: 10.1088/1674-4926/32/6/064006
[3]	Liu M X, Han Z S, Bi J S, et al. Effect of total ionizing dose radiation on the 0.25μm RF PDSOI nMOSFETs with thin gate oxide. Journal of Semiconductors, 2009, 30(1):014004 doi: 10.1088/1674-4926/30/1/014004
[4]	Cristoloveanu S, Li S. Electrical characterization of silicon-on-insulator materials and devices. Boston:Kluwer Academic Publishers, 1995 doi: 10.1007%2F978-1-4615-2245-4
[5]	Colinge J P. Hot-electron effects in silicon-on-insulator n-channel MOSFET's. IEEE Trans Electron Devices, 1987, ED-34:2173 http://ieeexplore.ieee.org/document/1486924/
[6]	Chen J J, Chen S M, Liang B, et al. Hot carrier effects of SOI NMOS. Journal of Semiconductors, 2010, 31(7):074006 doi: 10.1088/1674-4926/31/7/074006
[7]	Shing H R, Emmanuel R, Jean L P. Hot-carrier effects and lifetime prediction in off-state operation of deep submicron SOI N-MOSFET's. IEEE Trans Electron Devices, 1998, 45(5):1140 doi: 10.1109/16.669572
[8]	Rafi J M, Simoen E, Mercha A, et al. Impact of hot-carrier stress on gate-induced floating body effects and drain current transients of thin gate oxide partially depleted SOI nMOSFETs. Microelectron Reliab, 2005, (49):1536 http://adsabs.harvard.edu/abs/2005SSEle..49.1536R
[9]	He J, Zhang X, Huang R, et al. A refined forward gated-diode method for separating front channel hot-carrier-stress induced front and back gate interface and oxide traps in SOI NMOSFETs. Semicond Sci Technol, 2002, 17:487 doi: 10.1088/0268-1242/17/5/314
[10]	Thierry O, Sorin C, Girard B. Hot-carrier-induced degradation of the back interface in short-channel silicon-on-insulator MOSFET's. IEEE Electron Device Lett, 1991, 12(6):290 doi: 10.1109/55.82064
[11]	Eiji T, Cary Y Y, Akemi M H. Hot carrier effects in MOS device. Academic Press Inc, 1995 http://www.sciencedirect.com/science/article/pii/0026271493900819
[12]	Mercha A, Rafí J M, Simoen E. Linear kink effect induced by electron valence band tunneling in ultrathin gate oxide bulk and SOI MOSFETs. IEEE Trans Electron Devices, 2003, 50(7):1657 http://ieeexplore.ieee.org/document/1217253/
[13]	Cristoloveanu S, Gulwadi S M, Ioannou D E. Hot-electron-induced degradation of front and back channels in partially and fully depleted SIMOX MOSFET's. IEEE Electron Device Lett, 1992, 13(12):603 doi: 10.1109/55.192858
[14]	Jian C, Tung Y C, Ping K K, et al. Gate current in off-state MOSFET. IEEE Electron Device Lett, 1989, 10(5):203 doi: 10.1109/55.31721
[15]	Jian C, Fariborz A, Ping K, et al. The enhancement of gate-induced-drain-leakage (GIDL) current in short-channel SOI MOSFET and its application in measuring lateral bipolar current gain β. IEEE Electron Device Lett, 1992, 13(11):572 doi: 10.1109/55.192844
[16]	Jin Y C, Jerry G F. Analysis and control of floating-body bipolar effects in fully depleted submicrometer SOI MOSFET's. IEEE Electron Device, 1991, 38(6):1384 doi: 10.1109/16.81630
[17]	Jian C, Fariborz A, Hsing J W, et al. An accurate model of thin film SOI MOSFET breakdown voltage. Technical Digest of International Electron Devices Meeting, 1991:671 http://ieeexplore.ieee.org/document/235333/?arnumber=235333
[18]	Sinha S P, Franklin L D, Dimitris E I. Time dependence power laws of hot carrier degradation in SOI MOSFETS. Proceedings IEEE International SOI Conference, 1996 http://ieeexplore.ieee.org/document/552472/?reload=true&arnumber=552472&count=85&index=8
[19]	Fenouillet C, Faynot O, Tabone C. Characterization and simulation of STI isolation for 0.1μm partially-depleted SOI devices. IEEE International SOI Conference, 2001:87
[20]	Ning B, Bi D, Huang H. Bias dependence of TID radiation responses of 0.13μm partially depleted SOI NMOSFETs. Microelectron Reliab, 2013, 53(2):259 doi: 10.1016/j.microrel.2012.08.005
[21]	Choi J Y, Fossum J G. Analysis and control of floating-body bipolar effects in fully depleted submicrometer SOI MOSFET's. IEEE Trans Electron Devices, 1991, 38(6):1384 doi: 10.1109/16.81630

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Received: 03 December 2012 Revised: 21 January 2013 Online: Published: 01 July 2013

Article Navigation > Journal of Semiconductors > 2013 > 34(7): 074008

Qiwen Zheng, Xuefeng Yu, Jiangwei Cui, Qi Guo, Zhongchao Cong, Xingyao Zhang, Wei Deng, Xiaofu Zhang, Zhengxin Wu. Degradation of the front and back channels in a deep submicron partially depleted SOI NMOSFET under off-state stress[J]. Journal of Semiconductors, 2013, 34(7): 074008. doi: 10.1088/1674-4926/34/7/074008 ****Q W Zheng, X F Yu, J W Cui, Q Guo, Z C Cong, X Y Zhang, W Deng, X F Zhang, Z X Wu. Degradation of the front and back channels in a deep submicron partially depleted SOI NMOSFET under off-state stress[J]. J. Semicond., 2013, 34(7): 074008. doi: 10.1088/1674-4926/34/7/074008.

Citation:

Q W Zheng, X F Yu, J W Cui, Q Guo, Z C Cong, X Y Zhang, W Deng, X F Zhang, Z X Wu. Degradation of the front and back channels in a deep submicron partially depleted SOI NMOSFET under off-state stress[J]. J. Semicond., 2013, 34(7): 074008. doi: 10.1088/1674-4926/34/7/074008.

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Degradation of the front and back channels in a deep submicron partially depleted SOI NMOSFET under off-state stress

DOI: 10.1088/1674-4926/34/7/074008

Qiwen Zheng^1,2,3,
Xuefeng Yu^1,2,,
Jiangwei Cui^1,2,
Qi Guo^1,2,
Zhongchao Cong^1,2,3,
Xingyao Zhang^1,2,3,
Wei Deng^1,2,3,
Xiaofu Zhang^1,2,3,
Zhengxin Wu^1,2,3

1.
Xinjiang Technical Institute of Physics & Chemistry, Chinese Academy of Sciences, Urumuqi 830011, China
2.
Xinjiang Key Laboratory of Electric Information Materials and Devices, Urumuqi 830011, China
3.
University of Chinese Academy of Sciences, Beijing 100049, China

More Information

Corresponding author: Yu Xuefeng, Email:yuxf@ms.xjb.ac.cn
Received Date: 2012-12-03
Revised Date: 2013-01-21
Published Date: 2013-07-01

Abstract

Abstract

The hot-carrier effect characteristic in a deep submicron partially depleted SOI NMOSFET is investigated. Obvious hot-carrier degradation is observed under off-state stress. The hot-carrier damage is supposed to be induced by the parasitic bipolar effects of a float SOI device. The back channel also suffers degradation from the hot carrier in the drain depletion region as well as the front channel. At low gate voltage, there is a hump in the sub-threshold curve of the back gate transistor, and it does not shift in the same way as the main transistor under stress. While under the same condition, there is a more severe hot-carrier effect with a shorter channel transistor. The reasons for those phenomena are discussed in detail.
- silicon-on-insulator,
- hot-carrier effect,
- hump,
- back gate

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References(21)

References

[1]	Schwank J R, Ferlet-Cavrois V, Shaneyfelt M R. Radiation effects in SOI technologies. IEEE Trans Nucl Sci, 2003, 50(3):522 doi: 10.1109/TNS.2003.812930
[2]	Cui J W, Yu X F, Ren D Y, et al. Double humps and radiation effects of SOI NMOSFET. Journal of Semiconductors, 2011, 32(6):064006 doi: 10.1088/1674-4926/32/6/064006
[3]	Liu M X, Han Z S, Bi J S, et al. Effect of total ionizing dose radiation on the 0.25μm RF PDSOI nMOSFETs with thin gate oxide. Journal of Semiconductors, 2009, 30(1):014004 doi: 10.1088/1674-4926/30/1/014004
[4]	Cristoloveanu S, Li S. Electrical characterization of silicon-on-insulator materials and devices. Boston:Kluwer Academic Publishers, 1995 doi: 10.1007%2F978-1-4615-2245-4
[5]	Colinge J P. Hot-electron effects in silicon-on-insulator n-channel MOSFET's. IEEE Trans Electron Devices, 1987, ED-34:2173 http://ieeexplore.ieee.org/document/1486924/
[6]	Chen J J, Chen S M, Liang B, et al. Hot carrier effects of SOI NMOS. Journal of Semiconductors, 2010, 31(7):074006 doi: 10.1088/1674-4926/31/7/074006
[7]	Shing H R, Emmanuel R, Jean L P. Hot-carrier effects and lifetime prediction in off-state operation of deep submicron SOI N-MOSFET's. IEEE Trans Electron Devices, 1998, 45(5):1140 doi: 10.1109/16.669572
[8]	Rafi J M, Simoen E, Mercha A, et al. Impact of hot-carrier stress on gate-induced floating body effects and drain current transients of thin gate oxide partially depleted SOI nMOSFETs. Microelectron Reliab, 2005, (49):1536 http://adsabs.harvard.edu/abs/2005SSEle..49.1536R
[9]	He J, Zhang X, Huang R, et al. A refined forward gated-diode method for separating front channel hot-carrier-stress induced front and back gate interface and oxide traps in SOI NMOSFETs. Semicond Sci Technol, 2002, 17:487 doi: 10.1088/0268-1242/17/5/314
[10]	Thierry O, Sorin C, Girard B. Hot-carrier-induced degradation of the back interface in short-channel silicon-on-insulator MOSFET's. IEEE Electron Device Lett, 1991, 12(6):290 doi: 10.1109/55.82064
[11]	Eiji T, Cary Y Y, Akemi M H. Hot carrier effects in MOS device. Academic Press Inc, 1995 http://www.sciencedirect.com/science/article/pii/0026271493900819
[12]	Mercha A, Rafí J M, Simoen E. Linear kink effect induced by electron valence band tunneling in ultrathin gate oxide bulk and SOI MOSFETs. IEEE Trans Electron Devices, 2003, 50(7):1657 http://ieeexplore.ieee.org/document/1217253/
[13]	Cristoloveanu S, Gulwadi S M, Ioannou D E. Hot-electron-induced degradation of front and back channels in partially and fully depleted SIMOX MOSFET's. IEEE Electron Device Lett, 1992, 13(12):603 doi: 10.1109/55.192858
[14]	Jian C, Tung Y C, Ping K K, et al. Gate current in off-state MOSFET. IEEE Electron Device Lett, 1989, 10(5):203 doi: 10.1109/55.31721
[15]	Jian C, Fariborz A, Ping K, et al. The enhancement of gate-induced-drain-leakage (GIDL) current in short-channel SOI MOSFET and its application in measuring lateral bipolar current gain β. IEEE Electron Device Lett, 1992, 13(11):572 doi: 10.1109/55.192844
[16]	Jin Y C, Jerry G F. Analysis and control of floating-body bipolar effects in fully depleted submicrometer SOI MOSFET's. IEEE Electron Device, 1991, 38(6):1384 doi: 10.1109/16.81630
[17]	Jian C, Fariborz A, Hsing J W, et al. An accurate model of thin film SOI MOSFET breakdown voltage. Technical Digest of International Electron Devices Meeting, 1991:671 http://ieeexplore.ieee.org/document/235333/?arnumber=235333
[18]	Sinha S P, Franklin L D, Dimitris E I. Time dependence power laws of hot carrier degradation in SOI MOSFETS. Proceedings IEEE International SOI Conference, 1996 http://ieeexplore.ieee.org/document/552472/?reload=true&arnumber=552472&count=85&index=8
[19]	Fenouillet C, Faynot O, Tabone C. Characterization and simulation of STI isolation for 0.1μm partially-depleted SOI devices. IEEE International SOI Conference, 2001:87
[20]	Ning B, Bi D, Huang H. Bias dependence of TID radiation responses of 0.13μm partially depleted SOI NMOSFETs. Microelectron Reliab, 2013, 53(2):259 doi: 10.1016/j.microrel.2012.08.005
[21]	Choi J Y, Fossum J G. Analysis and control of floating-body bipolar effects in fully depleted submicrometer SOI MOSFET's. IEEE Trans Electron Devices, 1991, 38(6):1384 doi: 10.1109/16.81630

Degradation of the front and back channels in a deep submicron partially depleted SOI NMOSFET under off-state stress

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