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J. Semicond. > 2013, Volume 34 > Issue 8 > 085006

SEMICONDUCTOR INTEGRATED CIRCUITS

High-Q micro-ring resonators and grating couplers for silicon-on-insulator integrated photonic circuits

Xiaogang Tong, Jun Liu and Chenyang Xue

+ Author Affiliations

 Corresponding author: Liu Jun, Email:liuj@nuc.edu.cn; Xue Chenyang, xuechenyang@nuc.edu.cn

DOI: 10.1088/1674-4926/34/8/085006

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Abstract: An ultra-small integrated photonic circuit has been proposed, which incorporates a high-quality-factor passive micro-ring resonator (MR) linked to a vertical grating coupler on a standard silicon-on-insulator (SOI) substrate. The experimental results demonstrate that the MR propagation loss is 0.532 dB/cm with a 10 μm radius ring resonator, the intrinsic quality factor is as high as 202.000, the waveguide grating wavelength response curve is a 1 dB bandwidth of 40 nm at 1540 nm telecommunication wavelengths, and the measured fiber-to-fiber coupling loss is 10 dB. Furthermore, the resonator wavelength temperature dependence of the 450 nm wide micro-ring resonator is 54.1 pm/℃. Such vertical grating coupler and low loss MR-integrated components greatly promote a key element in biosensors and high-speed interconnect communication applications.

Key words: high-quality-factorpassive micro-ring resonatorswaveguide grating couplersintegrated photonic circuit

Silicon photonics based on SOI (silicon-on-insulator) nano-photonic waveguides is a promising technology for integrated photonics due to the unique properties of the ultra-high-index contrast silicon waveguide systems, and the use of advanced microelectronics manufacturing technologies[1]. Despite such positive prospects, one major problem is the issue of coupling light in and out of the nano-photonic circuits by means of optical fibers[2]. A completely different approach is the use of a grating to couple light into the thinner sub-micrometer waveguides. Because grating couplers are vertical or quasi-vertical couplers, they are usually based on the second order diffraction peak, which couples into the horizontally propagating fundamental mode of the nano-waveguide, and can be placed anywhere over the chip, not only at the edge[3]. So compared with edge coupling structures such as 3D adiabatic tapers or inverse tapers[4, 5], such couplers allow light coupling without the need for prior dicing of the chip, which also makes wafer-scale testing of the nano-photonic circuits possible.

The high integration density and low power consumption are necessary for a photonic network that requires optical devices with even smaller dimensions than have been demonstrated to date. The MR is an important optical component in modulators, switches, filters and sensors[6-9]. Silicon MR is a popular choice for such applications because it has a small size and high quality factor (Q). Several on-chip optical buffers based on silicon ring resonators have been demonstrated[10-12]. The extinction ratio is a very important figure of merit[13] that should be investigated in detail to make these devices suitable for practical applications. So the major challenge faced by these silicon-based optical buffers is the need for low-loss silicon waveguides and high-Q ring resonators.

In this paper, we experimentally demonstrate a passive photonic integrated circuit. We introduce the device fabrication and vertical coupling method to couple the light into the silicon nano-waveguide, describe the Q factor and provide the experiment setup, and show the experimental results, including the resonator wavelength temperature dependence and the optical characteristics of the silicon micro-ring resonator.

In our photonic integrated circuits, the 10 μm radius silicon micro-ring resonator is fabricated on an SOI wafer with a 220 nm thick silicon slab on top of a 3 μm silica buffer layer to prevent the optical mode from leaking into the substrate. The device patterns were exposed in a 230 nm thick positive resist (Polymethy Methacrylate, or PMMA A4) with a JBX-5500FS electron-beam lithography (EBL) system at 50 kV with the fifth mode, and the beam deflection step was 8 nm. An inductively coupled plasma (ICP) reactive ion etch (RIE) was then applied to etch through the 220 nm silicon layer. The cross section of the silicon waveguide is 450 × 220 nm2, with a mode area of about 0.1 μm2 for the transverse-electric (TE) optical mode in such a high-index-contrast structure. The micro-ring is side-coupled to the straight waveguide with an air gap of 100 nm between the straight waveguide and the micro-ring. Scanning electron microscope (SEM) photographs of the silicon micro-ring resonator and silicon nano-waveguide are shown in Fig. 1.

Figure  1.  SEM photographs of the silicon MR resonator.

At each end of the straight silicon waveguide, there is a waveguide grating coupler to couple the light between a single-mode fiber (SMF) and the silicon nano-photonic waveguide. The grating coupler is polarization-dependent, and for a 600 nm period, with a filling factor of 50% and shallow etched 100 nm into the top silicon layer, it only supports the TE mode. The grating takes care of the vertical spot-size conversion for horizontal spot-size conversion. This vertical coupling method has advantages in terms of easy alignment and simple fabrication of the mode converter compared to other coupling methods. Figure 2 shows an SEM photograph of the waveguide grating at the end of the straight waveguide.

Figure  2.  SEM photograph of the waveguide grating couplers.

Generally, the quality factor of the micro-ring resonator is defined in terms of the ratio of energy stored in the resonator to the energy being lost in one cycle. The quality factor of an SOI micro-ring resonator coupled with a single-mode waveguide is given by:

1Q=1Qint+1Qcou.

(1)

There are three major factors that affect the quality factor of an SOI micro-ring resonator. (1) The internal absorption loss of the micro-ring resonator. When a micro-ring resonator is isolated and not coupled to a waveguide or any other devices, its quality factor is limited by the material property. The absorption loss is given by the sum of the core and cladding absorption losses. (2) Radiation loss that is caused by roughness scattering as well as bending loss, and the trend of Q at very small radii that is eventually governed predominantly by the radiation loss. (3) Coupling loss that contains waveguide-to-resonator and mode-to-mode coupling loss and substrate leakage. Qcou is highly dependent on the coupling loss.

In our experiment, the excess loss through the complete structure was measured in the wavelength range from 1520 to 1580 nm using an Agilent 8164B wavelength domain component analyzer and a tunable light source with a 1 pm line width. The polarization in the input fiber was optimized for TE coupling with a "bat ear" fiber polarization controller. The input and output fibers were, respectively, positioned on two electromechanical 6D stages with 20 nm resolution. These should be placed under a certain angle (typically 9.5) relative to the vertical axis on the grating coupler, and are used to adjust the coupling position precisely for high coupling efficiency. The fiber alignment error was ±0.5 μm in any direction, and a traditional adiabatic taper was used to connect a 220 nm × 12 μm waveguide to a 220 nm × 450 nm waveguide. The transmission spectrum was collected by a power meter, and the experimental process was monitored simultaneously by two cameras (top view and 45 view, respectively).

As can be seen in Fig. 3, when the laser is input with 0 dBm, the grating coupling efficiency is seen obviously when the MR is not in a resonance state, and 1540 nm is the highest transmission. So, the waveguide grating wavelength response curve is a 1 dB bandwidth of 40 nm at 1540 nm telecommunication wavelengths, and the measured fiber-to-fiber coupling loss is 10 dB. The grating coupling efficiency was superior to the edge coupling structure with tapered waveguide structures[4, 5].

Figure  3.  Through-port transmission spectrum of the micro-ring resonator in transverse electric (TE) polarization.

To measure the spectral response of the micro-ring resonator, we sweep the tunable laser with a minimum step of 0.05 nm. The measured micro-ring resonance spectra are shown in Fig. 3, and the free spectral range (FSR) of the micro-ring resonator is about 9.5 nm. As shown in Fig. 4, we sweep the tunable laser with a minimum step of 0.0015 nm, and the resonance wavelength is 1532.5405 nm. The spectrum shows a 21 dB drop in transmission at the resonant wavelength when the light in the waveguide is coupled to the ring and is lost from scattering at the sidewalls of the ring. The 3 dB bandwidth is about 0.014 nm, corresponding to a Q-factor of Qloaded = 109 000.

Figure  4.  The measured insertion loss and fit of the analytical transfer function of an SOI micro-ring resonator of radius R = 10 μm, with Δλ = λ -1532.5405 nm.

As can be seen in Fig. 3, the micro-ring resonator is slightly under-coupled at this resonant wavelength. The intrinsic quality factor Qint of the ring can be written as[14]

Qint=2Qloaded1+T0,

(2)

where T0 is the fraction of transmitted optical power, which is measured by the power-meter at the resonant wavelength λ0. Another important parameter for the micro-ring resonator is the finesse. The finesse is defined and calculated (approximately) for the unloaded case[15]:

F=FSRΔλ3dB2παmicroringL=1αmicroringR.

(3)

The performance of a high-Q ring resonator is determined by two coefficients: the self-coupling coefficient α, which specifies the fraction of the amplitude transmitted on each pass of light through the coupler; and the loss coefficient t, which in silicon waveguides originates largely from the damage of the silicon surfaces by the dry-etching processes. Based on the measured 3 dB bandwidth with Δλ3dB, with the through-port extinction ratio ρ and the response period of the resonator as FSR, we derive the waveguide power coupling coefficient and micro-ring propagation power loss coefficient as[12]:

α=π×Δλ3dB(1T0)/FSR,

(4)

t=2π×Δλ3dBT0/FSR,

(5)

αmicroring=10lg(1t)/2πR.

(6)

So we obtain from Fig. 4 a Lorentzian fit to the resonance at λ0 = 1532.5405 nm. The through-port extinction is ρ=10lgT0. The total propagation loss per unit length in the αmicroring can be written as Eq. (6), and the fitted transmission loss is about 0.532 dB/cm.

When a pump light with power is injected into the micro-ring resonator, the absorbed energy is eventually converted into thermal energy and leads to a temperature shift ΔT. To measure the transmission spectrum at different temperatures with an R = 15 μm micro-ring resonator, the temperature dependence of the resonance wavelength can be expressed as follows[16]:

Δλ0ΔT=(neffαsub+ΔneffΔT)λ0neff,

(7)

where λ0 is the resonant wavelength; neff is the effective index of the waveguide; and αsub is the substrate expansion coefficient. Figure 5 shows the measured transmission spectrum of the MR for temperatures from 25 to 50 with an interval of 5 . By linear fitting of one resonance wavelength at different temperatures, the wavelength temperature dependence Δλ0/ΔT is extracted (Fig. 5(a)). As shown in Fig. 5(b), the resonance wavelength temperature dependence of the 450 nm width ring resonator is 54.1 pm/. For this thinned core structure, it could be used to avoid extra bending loss with a large ring radius.

Figure  5.  (a) The transmission spectra of the ring resonator with R = 15 μm at different temperatures. (b) The linear fit of the wavelength versus temperature.

In summary, we presented a photonic integrated circuits system in this paper, where EBL and ICP etching are used to fabricate such silicon photonics devices. For a 450 nm width and a radius with a 15 μm SOI ring resonator, the wavelength temperature dependence is 54.1 pm/. The radius with 10 μm micro-ring transmission loss fitted from the transmission spectrum is about 0.532 dB/cm, and the intrinsic Q-factor is as high as 202.000. In brief, the low-loss integrated components greatly promote more potential in the field of practical applications, such as microcavity gyroscopes, micro-filters and all-optical micro-switches.



[1]
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[3]
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[4]
Li Shuai, Wu Yuanda, Yin Xiaojie, et al. Tunable filters based on an SOI nano-wire waveguide micro ring resonator. Journal of Semiconductors, 2011, 32(8):084007 doi: 10.1088/1674-4926/32/8/084007
[5]
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[6]
Manolatou C, Lipson M. All-optical silicon modulators based on carrier injection by two-photon absorption. J Lightwave Technol, 2006, 24:1433 doi: 10.1109/JLT.2005.863326
[7]
Po D, Preble S F, Lipson M. All-optical compact silicon comb switch. Opt Express, 2007, 15:9600 doi: 10.1364/OE.15.009600
[8]
Little B E, Chu S T, Haus H A, et al. Microring resonator channel dropping filters. J Lightwave Technol, 1997, 15:998 doi: 10.1109/50.588673
[9]
Xu D X, Densmore A, Delâge A, et al. Folded cavity SOI microring sensors for high sensitivity and real time measurement of biomolecular binding. Opt Express, 2008, 16:15137 doi: 10.1364/OE.16.015137
[10]
Xia F N, Sekaric L, Vlasov Y. Ultracompact optical buffers on a silicon chip. Nat Photonics, 2007, 1:65 doi: 10.1038/nphoton.2006.42
[11]
Xu Q F, Dong P, Lipson M. Breaking the delay-bandwidth limit in a photonic structure. Nat Phys, 2007, 3:406 doi: 10.1038/nphys600
[12]
Xiao S, Khan M H, Shen H, et al. Modeling and measurement of losses in silicon-on-insulator resonators and bends. Opt Express, 2007, 15:10553 doi: 10.1364/OE.15.010553
[13]
Liu S W, Xiao M. Electro-optic switch in ferroelectric thin films mediated by surface plasmons. Appl Phys Lett, 2006, 88:14 http://www.uark.edu/misc/quantopt/apl143512.pdf
[14]
Luo L W, Wiederhecker G S, Cardenas J, et al. High quality factor etchless silicon photonic ring resonators. Opt Express, 2011, 19:6284 doi: 10.1364/OE.19.006284
[15]
Rabiei P, Steier W H, Zhang C, et al. Polymer micro-ring filters and modulators. J Lightwave Technol, 2002, 20:1968 doi: 10.1109/JLT.2002.803058
[16]
Kokubun Y, Yoneda S, Matsuura S. Temperature-independent optical filter at 1.55-μm wavelength using a silica-based thermal waveguide. Electron Lett, 1998, 34:367 doi: 10.1049/el:19980245
Fig. 1.  SEM photographs of the silicon MR resonator.

Fig. 2.  SEM photograph of the waveguide grating couplers.

Fig. 3.  Through-port transmission spectrum of the micro-ring resonator in transverse electric (TE) polarization.

Fig. 4.  The measured insertion loss and fit of the analytical transfer function of an SOI micro-ring resonator of radius R = 10 μm, with Δλ = λ -1532.5405 nm.

Fig. 5.  (a) The transmission spectra of the ring resonator with R = 15 μm at different temperatures. (b) The linear fit of the wavelength versus temperature.

[1]
Zimmermann L, Tekin T, Schroeder H, et al. How to bring nanophotonics to application-silicon photonics packaging. LEOS Newsletter, 2008, 22:4 http://www.photonics.intec.ugent.be/download/pub_2811.pdf
[2]
Xu Q, Manipatruni S, Schmidt B, et al. 12.5 Gbit/s carrier-injection-based silicon micro-ring silicon modulators. Opt Express, 2007, 15:430 doi: 10.1364/OE.15.000430
[3]
Wu Zhigang, Zhang Weigang, Wang Zhi, et al. Fabrication and evaluation of Bragg gratings on optimally designed silicon-on-insulator rib waveguides using electron-beam lithography. Chinese Journal of Semiconductors, 2006, 27(8):1347 https://waseda.pure.elsevier.com/en/publications/fabrication-and-evaluation-of-bragg-gratings-on-optimally-designe
[4]
Li Shuai, Wu Yuanda, Yin Xiaojie, et al. Tunable filters based on an SOI nano-wire waveguide micro ring resonator. Journal of Semiconductors, 2011, 32(8):084007 doi: 10.1088/1674-4926/32/8/084007
[5]
Ren G H, Cheng S W, Cheng Y P, et al. Study on inverse taper based mode transformer for low loss coupling between silicon wire waveguide and lensed fiber. Opt Commun, 2011, 284:4782 doi: 10.1016/j.optcom.2011.05.072
[6]
Manolatou C, Lipson M. All-optical silicon modulators based on carrier injection by two-photon absorption. J Lightwave Technol, 2006, 24:1433 doi: 10.1109/JLT.2005.863326
[7]
Po D, Preble S F, Lipson M. All-optical compact silicon comb switch. Opt Express, 2007, 15:9600 doi: 10.1364/OE.15.009600
[8]
Little B E, Chu S T, Haus H A, et al. Microring resonator channel dropping filters. J Lightwave Technol, 1997, 15:998 doi: 10.1109/50.588673
[9]
Xu D X, Densmore A, Delâge A, et al. Folded cavity SOI microring sensors for high sensitivity and real time measurement of biomolecular binding. Opt Express, 2008, 16:15137 doi: 10.1364/OE.16.015137
[10]
Xia F N, Sekaric L, Vlasov Y. Ultracompact optical buffers on a silicon chip. Nat Photonics, 2007, 1:65 doi: 10.1038/nphoton.2006.42
[11]
Xu Q F, Dong P, Lipson M. Breaking the delay-bandwidth limit in a photonic structure. Nat Phys, 2007, 3:406 doi: 10.1038/nphys600
[12]
Xiao S, Khan M H, Shen H, et al. Modeling and measurement of losses in silicon-on-insulator resonators and bends. Opt Express, 2007, 15:10553 doi: 10.1364/OE.15.010553
[13]
Liu S W, Xiao M. Electro-optic switch in ferroelectric thin films mediated by surface plasmons. Appl Phys Lett, 2006, 88:14 http://www.uark.edu/misc/quantopt/apl143512.pdf
[14]
Luo L W, Wiederhecker G S, Cardenas J, et al. High quality factor etchless silicon photonic ring resonators. Opt Express, 2011, 19:6284 doi: 10.1364/OE.19.006284
[15]
Rabiei P, Steier W H, Zhang C, et al. Polymer micro-ring filters and modulators. J Lightwave Technol, 2002, 20:1968 doi: 10.1109/JLT.2002.803058
[16]
Kokubun Y, Yoneda S, Matsuura S. Temperature-independent optical filter at 1.55-μm wavelength using a silica-based thermal waveguide. Electron Lett, 1998, 34:367 doi: 10.1049/el:19980245
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    Xiaogang Tong, Jun Liu, Chenyang Xue. High-Q micro-ring resonators and grating couplers for silicon-on-insulator integrated photonic circuits[J]. Journal of Semiconductors, 2013, 34(8): 085006. doi: 10.1088/1674-4926/34/8/085006
    X G Tong, J Liu, C Y Xue. High-Q micro-ring resonators and grating couplers for silicon-on-insulator integrated photonic circuits[J]. J. Semicond., 2013, 34(8): 085006. doi: 10.1088/1674-4926/34/8/085006.
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    Received: 29 September 2012 Revised: 05 March 2013 Online: Published: 01 August 2013

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      Xiaogang Tong, Jun Liu, Chenyang Xue. High-Q micro-ring resonators and grating couplers for silicon-on-insulator integrated photonic circuits[J]. Journal of Semiconductors, 2013, 34(8): 085006. doi: 10.1088/1674-4926/34/8/085006 ****X G Tong, J Liu, C Y Xue. High-Q micro-ring resonators and grating couplers for silicon-on-insulator integrated photonic circuits[J]. J. Semicond., 2013, 34(8): 085006. doi: 10.1088/1674-4926/34/8/085006.
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      Xiaogang Tong, Jun Liu, Chenyang Xue. High-Q micro-ring resonators and grating couplers for silicon-on-insulator integrated photonic circuits[J]. Journal of Semiconductors, 2013, 34(8): 085006. doi: 10.1088/1674-4926/34/8/085006 ****
      X G Tong, J Liu, C Y Xue. High-Q micro-ring resonators and grating couplers for silicon-on-insulator integrated photonic circuits[J]. J. Semicond., 2013, 34(8): 085006. doi: 10.1088/1674-4926/34/8/085006.

      High-Q micro-ring resonators and grating couplers for silicon-on-insulator integrated photonic circuits

      DOI: 10.1088/1674-4926/34/8/085006
      Funds:

      the Fund for Top Young Academic Leaders of Higher Learning Institutions of Shanxi (TYAL), China 

      the National Natural Science Foundation of China 61076111

      Project supported by the National Basic Research Program of China (No. 2009CB326206), the National Natural Science Foundation of China (Nos. 61076111, 50975266), the Key Laboratory Fund of China (No. 9140C1204040909), the Graduate Innovation Project of China (No. 20103083), and the Fund for Top Young Academic Leaders of Higher Learning Institutions of Shanxi (TYAL), China

      the Graduate Innovation Project of China 20103083

      the National Basic Research Program of China 2009CB326206

      the National Natural Science Foundation of China 50975266

      the Key Laboratory Fund of China 9140C1204040909

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