Fig. 1.
(a) A single stage of the push-pull inverter. (b) The equivalent small signal model.
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| Citation: |
Lianxi Liu, Jiao Zou, Yunfei En, Shubin Liu, Yue Niu, Zhangming Zhu, Yintang Yang. A high gain wide dynamic range transimpedance amplifier for optical receivers[J]. Journal of Semiconductors, 2014, 35(1): 015001. doi: 10.1088/1674-4926/35/1/015001
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L X Liu, J Zou, Y F En, S B Liu, Y Niu, Z M Zhu, Y T Yang. A high gain wide dynamic range transimpedance amplifier for optical receivers[J]. J. Semicond., 2014, 35(1): 015001. doi: 10.1088/1674-4926/35/1/015001.
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A high gain wide dynamic range transimpedance amplifier for optical receivers
DOI: 10.1088/1674-4926/35/1/015001
More Information
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Abstract
As the front-end preamplifiers in optical receivers, transimpedance amplifiers (TIAs) are commonly required to have a high gain and low input noise to amplify the weak and susceptible input signal. At the same time, the TIAs should possess a wide dynamic range (DR) to prevent the circuit from becoming saturated by high input currents. Based on the above, this paper presents a CMOS transimpedance amplifier with high gain and a wide DR for 2.5 Gbit/s communications. The TIA proposed consists of a three-stage cascade pull push inverter, an automatic gain control circuit, and a shunt transistor controlled by the resistive divider. The inductive-series peaking technique is used to further extend the bandwidth. The TIA proposed displays a maximum transimpedance gain of 88.3 dBΩ with the -3 dB bandwidth of 1.8 GHz, exhibits an input current dynamic range from 100 nA to 10 mA. The output voltage noise is less than 48.23 nV/$\sqrt {{\rm{Hz}}}$ within the -3 dB bandwidth. The circuit is fabricated using an SMIC 0.18 μm 1P6M RFCMOS process and dissipates a dc power of 9.4 mW with 1.8 V supply voltage. -
References
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