Simulation study of conductive filament growth dynamics in oxide-electrolyte-based ReRAM

Pengxiao Sun; Su Liu; Ling Li; Ming Liu

doi:10.1088/1674-4926/35/10/104007

J. Semicond. > 2014, Volume 35 > Issue 10 > 104007

SEMICONDUCTOR DEVICES

Simulation study of conductive filament growth dynamics in oxide-electrolyte-based ReRAM

Pengxiao Sun^{1, 2}, Su Liu^1,, Ling Li² and Ming Liu²

+ Author Affiliations

Corresponding author: Liu Su, Email:liusu@lzu.edu.cn

DOI: 10.1088/1674-4926/35/10/104007

Abstract: Monte Carlo (MC) simulations, including multiple physical and chemical mechanisms, were performed to investigate the microstructure evolution of a conducting metal filament in a typical oxide-electrolyte-based ReRAM. It has been revealed that the growth direction and geometry of the conductive filament are controlled by the ion migration rate in the electrolyte layer during the formation procedure. When the migration rate is relative high, the filament is shown to grow from cathode to anode. When the migration rate is low, the growth direction is expected to start from the anode. Simulated conductive filament (CF) geometries and Ⅰ-Ⅴ characteristics are also illustrated and analyzed. A good agreement between the simulation results and experiment data is obtained.

Key words: ReRAM, Monte Carlo method, growth direction of filament, ion migration rate

References

[1]	Long S, Liu Q, Lv H, et al. Resistive switching mechanism of Ag/ZrO₂:Cu/Pt memory cell. Appl Phys A, 2011, 102(4):915 doi: 10.1007/s00339-011-6273-8
[2]	Zhang X. Resistive switching characteristics of Ni/HfO₂/Pt ReRAM. Journal of Semiconductors, 2012, 33(5):054011 doi: 10.1088/1674-4926/33/5/054011
[3]	Yang Y C, Pan F, Liu Q, et al. Fully room-temperature-fabricated nonvolatile resistive memory for ultrafast and high-density memory application. Nano Lett, 2009, 9(4):1636 doi: 10.1021/nl900006g
[4]	Zhou M X, Zhao Q, Zhang W, et al. The conductive path in HfO₂:first principles study. Journal of Semiconductors, 2012, 33(7):072002 doi: 10.1088/1674-4926/33/7/072002
[5]	Lu J L, Luo J, Zhao H P, et al. Optimal migration route of Cu in HfO₂. Journal of Semiconductors, 2014, 35(1):013001 doi: 10.1088/1674-4926/35/1/013001
[6]	Sun P, Li L, Lu N, et al. Physical model of dynamic Joule heating effect for reset process in conductive-bridge random access memory. Journal of Computational Electronics, 2014, 13(2):432 doi: 10.1007/s10825-013-0552-x
[7]	Liu Q, Guan W, Long S, et al. Resistive switching memory effect of ZrO₂ films with Zr⁺ implanted. Appl Phys Lett, 2008, 92(1):012117 doi: 10.1063/1.2832660
[8]	Guan W, Liu M, Long S, et al. On the resistive switching mechanisms of Cu/ZrO₂:Cu/Pt. Appl Phys Lett, 2008, 93(22):223506 doi: 10.1063/1.3039079
[9]	Waser R, Aono M. Nanoionics-based resistive switching memories. Nature Mater, 2007, 6(11):833 doi: 10.1038/nmat2023
[10]	Waser R, Dittmann R, Staikov G, et al. Redox-based resistive switching memories-nanoionic mechanisms, prospects, and challenges. advanced materials. 2009, 21(25/26):2632 https://www.deepdyve.com/lp/wiley/redox-based-resistive-switching-memories-nanoionic-mechanisms-V8Ts0Otfz7
[11]	Guo X, Schindler C, Menzel S, et al. Understanding the switching-off mechanism in Ag migration based resistively switching model systems. Appl Phys Lett, 2007, 91:133513 doi: 10.1063/1.2793686
[12]	Yang Y, Gao P, Gaba S, et al. Observation of conducting filament growth in nanoscale resistive memories. Nature Commun, 2012, 3:732 doi: 10.1038/ncomms1737
[13]	Liu Q, Sun J, Lv H, et al. Real-time observation on dynamic growth/dissolution of conductive filaments in oxide-electrolyte-based ReRAM. Adv Mater, 2012, 24(14):844 https://www.ncbi.nlm.nih.gov/pubmed/22407902
[14]	Gao S, Song C, Chen C, et al. Dynamic processes of resistive switching in metallic filament-based organic memory devices. J Phys Chem C, 2012, 116(33):17955 doi: 10.1021/jp305482c
[15]	Yu S, Guan X, Wong H S. On the stochastic nature of resistive switching in metal oxide RRAM: physical modeling, Monte Carlo simulation, and experimental characterization. IEDM Tech Dig, 2011: 17. 3. 1
[16]	Pornprasertsuk R, Holme T, Prinz F B. Kinetic monte carlo simulations of solid oxide fuel cell. J Electrochem Soc, 2009, 156(12):B1406 doi: 10.1149/1.3232209
[17]	Lin S, Zhao L, Zhang J, et al. Electrochemical simulation of filament growth and dissolution in conductive-bridging RAM (CBRAM) with cylindrical coordinates. IEDM Tech Dig, 2012: 26. 3. 1
[18]	Banno N, Sakamoto T, Iguchi N, et al. Diffusivity of Cu ions in solid electrolyte and its effect on the performance of nanometer-scale switch. IEEE Trans Electron Devices, 2008, 55(11):3283 doi: 10.1109/TED.2008.2004246
[19]	Wang Y, Liu Q, Long S, et al. Investigation of resistive switching in Cu-doped HfO₂ thin film for multilevel non-volatile memory applications. Nanotechnology, 2010, 21(4):045202 doi: 10.1088/0957-4484/21/4/045202
[20]	Lian W, Lv H, Liu Q, et al. Improved resistive switching uniformity in devices by using current sweeping mode. IEEE Electron Device Lett, 2011, 32(8):1053 doi: 10.1109/LED.2011.2157990

Fig. 1. (Color online) Physical/Chemical mechanisms considered in the simulation. 1: atom oxidation at anode, 2: ion reduction, 3: ion reduction at step site, 4: ion reduction at hole site, 5: ion surface diffusion, 6: ion migration, 7: ion adsorption at surface, 8: ion desorption at surface.

DownLoad: Full-Size Img PowerPoint

Fig. 2. (Color online) A schematic of the resistor network that is adopted in the simulation. $R_{\rm m}$ and $R_{\rm o}$ represent the resistor unit of metallic filament and oxide-electrolyte material, respectively.

DownLoad: Full-Size Img PowerPoint

Fig. 3. The simulation flowchart that was used in this work.

DownLoad: Full-Size Img PowerPoint

Fig. 4. (Color online) Simulated $I$--$V$ curve. The upper inset in Fig. 4 shows the device structure adopted in the calculation, the lower inset is the measured $I$--$V$ curve in Cu/HfO$_{2}$ (10 nm)/Pt device at room temperature.

DownLoad: Full-Size Img PowerPoint

Fig. 5. (Color online) Evolution of CF structure (a) with relative high ion migration rate, (b) with low ion migration rate.

DownLoad: Full-Size Img PowerPoint

Table 1. Input parameters in the simulation.

[1]	Long S, Liu Q, Lv H, et al. Resistive switching mechanism of Ag/ZrO₂:Cu/Pt memory cell. Appl Phys A, 2011, 102(4):915 doi: 10.1007/s00339-011-6273-8
[2]	Zhang X. Resistive switching characteristics of Ni/HfO₂/Pt ReRAM. Journal of Semiconductors, 2012, 33(5):054011 doi: 10.1088/1674-4926/33/5/054011
[3]	Yang Y C, Pan F, Liu Q, et al. Fully room-temperature-fabricated nonvolatile resistive memory for ultrafast and high-density memory application. Nano Lett, 2009, 9(4):1636 doi: 10.1021/nl900006g
[4]	Zhou M X, Zhao Q, Zhang W, et al. The conductive path in HfO₂:first principles study. Journal of Semiconductors, 2012, 33(7):072002 doi: 10.1088/1674-4926/33/7/072002
[5]	Lu J L, Luo J, Zhao H P, et al. Optimal migration route of Cu in HfO₂. Journal of Semiconductors, 2014, 35(1):013001 doi: 10.1088/1674-4926/35/1/013001
[6]	Sun P, Li L, Lu N, et al. Physical model of dynamic Joule heating effect for reset process in conductive-bridge random access memory. Journal of Computational Electronics, 2014, 13(2):432 doi: 10.1007/s10825-013-0552-x
[7]	Liu Q, Guan W, Long S, et al. Resistive switching memory effect of ZrO₂ films with Zr⁺ implanted. Appl Phys Lett, 2008, 92(1):012117 doi: 10.1063/1.2832660
[8]	Guan W, Liu M, Long S, et al. On the resistive switching mechanisms of Cu/ZrO₂:Cu/Pt. Appl Phys Lett, 2008, 93(22):223506 doi: 10.1063/1.3039079
[9]	Waser R, Aono M. Nanoionics-based resistive switching memories. Nature Mater, 2007, 6(11):833 doi: 10.1038/nmat2023
[10]	Waser R, Dittmann R, Staikov G, et al. Redox-based resistive switching memories-nanoionic mechanisms, prospects, and challenges. advanced materials. 2009, 21(25/26):2632 https://www.deepdyve.com/lp/wiley/redox-based-resistive-switching-memories-nanoionic-mechanisms-V8Ts0Otfz7
[11]	Guo X, Schindler C, Menzel S, et al. Understanding the switching-off mechanism in Ag migration based resistively switching model systems. Appl Phys Lett, 2007, 91:133513 doi: 10.1063/1.2793686
[12]	Yang Y, Gao P, Gaba S, et al. Observation of conducting filament growth in nanoscale resistive memories. Nature Commun, 2012, 3:732 doi: 10.1038/ncomms1737
[13]	Liu Q, Sun J, Lv H, et al. Real-time observation on dynamic growth/dissolution of conductive filaments in oxide-electrolyte-based ReRAM. Adv Mater, 2012, 24(14):844 https://www.ncbi.nlm.nih.gov/pubmed/22407902
[14]	Gao S, Song C, Chen C, et al. Dynamic processes of resistive switching in metallic filament-based organic memory devices. J Phys Chem C, 2012, 116(33):17955 doi: 10.1021/jp305482c
[15]	Yu S, Guan X, Wong H S. On the stochastic nature of resistive switching in metal oxide RRAM: physical modeling, Monte Carlo simulation, and experimental characterization. IEDM Tech Dig, 2011: 17. 3. 1
[16]	Pornprasertsuk R, Holme T, Prinz F B. Kinetic monte carlo simulations of solid oxide fuel cell. J Electrochem Soc, 2009, 156(12):B1406 doi: 10.1149/1.3232209
[17]	Lin S, Zhao L, Zhang J, et al. Electrochemical simulation of filament growth and dissolution in conductive-bridging RAM (CBRAM) with cylindrical coordinates. IEDM Tech Dig, 2012: 26. 3. 1
[18]	Banno N, Sakamoto T, Iguchi N, et al. Diffusivity of Cu ions in solid electrolyte and its effect on the performance of nanometer-scale switch. IEEE Trans Electron Devices, 2008, 55(11):3283 doi: 10.1109/TED.2008.2004246
[19]	Wang Y, Liu Q, Long S, et al. Investigation of resistive switching in Cu-doped HfO₂ thin film for multilevel non-volatile memory applications. Nanotechnology, 2010, 21(4):045202 doi: 10.1088/0957-4484/21/4/045202
[20]	Lian W, Lv H, Liu Q, et al. Improved resistive switching uniformity in devices by using current sweeping mode. IEEE Electron Device Lett, 2011, 32(8):1053 doi: 10.1109/LED.2011.2157990

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Received: 11 March 2014 Revised: 10 April 2014 Online: Published: 01 October 2014

Article Navigation > Journal of Semiconductors > 2014 > 35(10): 104007

Pengxiao Sun, Su Liu, Ling Li, Ming Liu. Simulation study of conductive filament growth dynamics in oxide-electrolyte-based ReRAM[J]. Journal of Semiconductors, 2014, 35(10): 104007. doi: 10.1088/1674-4926/35/10/104007 ****P X Sun, S Liu, L Li, M Liu. Simulation study of conductive filament growth dynamics in oxide-electrolyte-based ReRAM[J]. J. Semicond., 2014, 35(10): 104007. doi: 10.1088/1674-4926/35/10/104007.

Citation:

Pengxiao Sun, Su Liu, Ling Li, Ming Liu. Simulation study of conductive filament growth dynamics in oxide-electrolyte-based ReRAM[J]. Journal of Semiconductors, 2014, 35(10): 104007. doi: 10.1088/1674-4926/35/10/104007 ****

P X Sun, S Liu, L Li, M Liu. Simulation study of conductive filament growth dynamics in oxide-electrolyte-based ReRAM[J]. J. Semicond., 2014, 35(10): 104007. doi: 10.1088/1674-4926/35/10/104007.

Citation:

P X Sun, S Liu, L Li, M Liu. Simulation study of conductive filament growth dynamics in oxide-electrolyte-based ReRAM[J]. J. Semicond., 2014, 35(10): 104007. doi: 10.1088/1674-4926/35/10/104007.

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Simulation study of conductive filament growth dynamics in oxide-electrolyte-based ReRAM

DOI: 10.1088/1674-4926/35/10/104007

1.
School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China
2.
Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

Funds:

the National Natural Science Foundation of China 61106119

Project supported by the Ministry of Science and Technology of China (Nos. 2010CB934200, 2011CBA00602, 2009CB930803, 2011CB921804, 2011AA010401, 2011AA010402, XDA06020102) and the National Natural Science Foundation of China (Nos. 61221004, 61274091, 60825403, 61106119, 61106082, 61306117)

the Ministry of Science and Technology of China XDA06020102

the Ministry of Science and Technology of China 2009CB930803

the National Natural Science Foundation of China 61274091

the Ministry of Science and Technology of China 2011CB921804

the National Natural Science Foundation of China 60825403

the National Natural Science Foundation of China 61106082

the National Natural Science Foundation of China 61221004

the Ministry of Science and Technology of China 2010CB934200

the Ministry of Science and Technology of China 2011AA010401

the National Natural Science Foundation of China 61306117

the Ministry of Science and Technology of China 2011AA010402

the Ministry of Science and Technology of China 2011CBA00602

More Information

Corresponding author: Liu Su, Email:liusu@lzu.edu.cn
Received Date: 2014-03-11
Revised Date: 2014-04-10
Published Date: 2014-10-01

Abstract

Abstract

Monte Carlo (MC) simulations, including multiple physical and chemical mechanisms, were performed to investigate the microstructure evolution of a conducting metal filament in a typical oxide-electrolyte-based ReRAM. It has been revealed that the growth direction and geometry of the conductive filament are controlled by the ion migration rate in the electrolyte layer during the formation procedure. When the migration rate is relative high, the filament is shown to grow from cathode to anode. When the migration rate is low, the growth direction is expected to start from the anode. Simulated conductive filament (CF) geometries and Ⅰ-Ⅴ characteristics are also illustrated and analyzed. A good agreement between the simulation results and experiment data is obtained.
- ReRAM,
- Monte Carlo method,
- growth direction of filament,
- ion migration rate

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References(20)

References

[1]	Long S, Liu Q, Lv H, et al. Resistive switching mechanism of Ag/ZrO₂:Cu/Pt memory cell. Appl Phys A, 2011, 102(4):915 doi: 10.1007/s00339-011-6273-8
[2]	Zhang X. Resistive switching characteristics of Ni/HfO₂/Pt ReRAM. Journal of Semiconductors, 2012, 33(5):054011 doi: 10.1088/1674-4926/33/5/054011
[3]	Yang Y C, Pan F, Liu Q, et al. Fully room-temperature-fabricated nonvolatile resistive memory for ultrafast and high-density memory application. Nano Lett, 2009, 9(4):1636 doi: 10.1021/nl900006g
[4]	Zhou M X, Zhao Q, Zhang W, et al. The conductive path in HfO₂:first principles study. Journal of Semiconductors, 2012, 33(7):072002 doi: 10.1088/1674-4926/33/7/072002
[5]	Lu J L, Luo J, Zhao H P, et al. Optimal migration route of Cu in HfO₂. Journal of Semiconductors, 2014, 35(1):013001 doi: 10.1088/1674-4926/35/1/013001
[6]	Sun P, Li L, Lu N, et al. Physical model of dynamic Joule heating effect for reset process in conductive-bridge random access memory. Journal of Computational Electronics, 2014, 13(2):432 doi: 10.1007/s10825-013-0552-x
[7]	Liu Q, Guan W, Long S, et al. Resistive switching memory effect of ZrO₂ films with Zr⁺ implanted. Appl Phys Lett, 2008, 92(1):012117 doi: 10.1063/1.2832660
[8]	Guan W, Liu M, Long S, et al. On the resistive switching mechanisms of Cu/ZrO₂:Cu/Pt. Appl Phys Lett, 2008, 93(22):223506 doi: 10.1063/1.3039079
[9]	Waser R, Aono M. Nanoionics-based resistive switching memories. Nature Mater, 2007, 6(11):833 doi: 10.1038/nmat2023
[10]	Waser R, Dittmann R, Staikov G, et al. Redox-based resistive switching memories-nanoionic mechanisms, prospects, and challenges. advanced materials. 2009, 21(25/26):2632 https://www.deepdyve.com/lp/wiley/redox-based-resistive-switching-memories-nanoionic-mechanisms-V8Ts0Otfz7
[11]	Guo X, Schindler C, Menzel S, et al. Understanding the switching-off mechanism in Ag migration based resistively switching model systems. Appl Phys Lett, 2007, 91:133513 doi: 10.1063/1.2793686
[12]	Yang Y, Gao P, Gaba S, et al. Observation of conducting filament growth in nanoscale resistive memories. Nature Commun, 2012, 3:732 doi: 10.1038/ncomms1737
[13]	Liu Q, Sun J, Lv H, et al. Real-time observation on dynamic growth/dissolution of conductive filaments in oxide-electrolyte-based ReRAM. Adv Mater, 2012, 24(14):844 https://www.ncbi.nlm.nih.gov/pubmed/22407902
[14]	Gao S, Song C, Chen C, et al. Dynamic processes of resistive switching in metallic filament-based organic memory devices. J Phys Chem C, 2012, 116(33):17955 doi: 10.1021/jp305482c
[15]	Yu S, Guan X, Wong H S. On the stochastic nature of resistive switching in metal oxide RRAM: physical modeling, Monte Carlo simulation, and experimental characterization. IEDM Tech Dig, 2011: 17. 3. 1
[16]	Pornprasertsuk R, Holme T, Prinz F B. Kinetic monte carlo simulations of solid oxide fuel cell. J Electrochem Soc, 2009, 156(12):B1406 doi: 10.1149/1.3232209
[17]	Lin S, Zhao L, Zhang J, et al. Electrochemical simulation of filament growth and dissolution in conductive-bridging RAM (CBRAM) with cylindrical coordinates. IEDM Tech Dig, 2012: 26. 3. 1
[18]	Banno N, Sakamoto T, Iguchi N, et al. Diffusivity of Cu ions in solid electrolyte and its effect on the performance of nanometer-scale switch. IEEE Trans Electron Devices, 2008, 55(11):3283 doi: 10.1109/TED.2008.2004246
[19]	Wang Y, Liu Q, Long S, et al. Investigation of resistive switching in Cu-doped HfO₂ thin film for multilevel non-volatile memory applications. Nanotechnology, 2010, 21(4):045202 doi: 10.1088/0957-4484/21/4/045202
[20]	Lian W, Lv H, Liu Q, et al. Improved resistive switching uniformity in devices by using current sweeping mode. IEEE Electron Device Lett, 2011, 32(8):1053 doi: 10.1109/LED.2011.2157990

Simulation study of conductive filament growth dynamics in oxide-electrolyte-based ReRAM

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