Fig. 1.
A schematic drawing of the PVT growth method of a ZnO crystal.
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| Citation: |
Yang Liu, Jianping Ma, Fuli Liu, Yuan Zang, Yantao Liu. Physical vapor transport crystal growth of ZnO[J]. Journal of Semiconductors, 2014, 35(3): 033001. doi: 10.1088/1674-4926/35/3/033001
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Y Liu, J P Ma, F L Liu, Y Zang, Y T Liu. Physical vapor transport crystal growth of ZnO[J]. J. Semicond., 2014, 35(3): 033001. doi: 10.1088/1674-4926/35/3/033001.
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Abstract
Zinc oxide (ZnO) has a wide band gap, high stability and a high thermal operating range that makes it a suitable material as a semiconductor for fabricating light emitting diodes (LEDs) and laser diodes, photodiodes, power diodes and other semiconductor devices. Recently, a new crystal growth for producing ZnO crystal boules was developed, which was physical vapor transport (PVT), at temperatures exceeding 1500℃ under a certain system pressure. ZnO crystal wafers in sizes up to 50 mm in diameter were produced. The conditions of ZnO crystal growth, growth rate and the quality of ZnO crystal were analyzed. Results from crystal growth and material characterization are presented and discussed. Our research results suggest that the novel crystal growth technique is a viable production technique for producing ZnO crystals and substrates for semiconductor device applications. -
References
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