Optimization of ohmic contact for InP-based transferred electronic devices

Deqi Wu; Wuchang Ding; Shanshan Yang; Rui Jia; Zhi Jin; Xinyu Liu

doi:10.1088/1674-4926/35/3/036001

J. Semicond. > 2014, Volume 35 > Issue 3 > 036001

SEMICONDUCTOR TECHNOLOGY

Optimization of ohmic contact for InP-based transferred electronic devices

Deqi Wu¹, Wuchang Ding¹, Shanshan Yang^{1, 2}, Rui Jia^1,, Zhi Jin¹ and Xinyu Liu¹

+ Author Affiliations

Corresponding author: Jia Rui, Email:jiarui@ime.ac.cn

DOI: 10.1088/1674-4926/35/3/036001

Abstract: The effect of the annealing time and annealing temperature on Ni/Ge/Au electrode contacts deposited on the n-type InP contact layer has been studied using a circular transmission line model. The minimum specific contact resistance of 3.2×10^-7Ω·cm² was achieved on the low-doped n-type InP contact layer with a 40 s anneal at 425℃. In order to improve the ohmic contact and reduce the difficulty in the fabrication of the high doped InP epi-layer, the doping concentration in the InP contact layer was chosen to be 5×10¹⁸ cm^-3 in the fabrication of transferred electronic devices. Excellent differential negative resistance properties were obtained by an electron beam evaporating the Ni/Ge/Au/Ge/Ni/Au composite electrode on an InP epi-layer with a 60 s anneal at 380℃.

Key words: circular transmission line model, specific contact resistance, InP, transferred electronic devices, differential negative resistance

References

[1]	Shih Y C, Murakami M, Wilkie E L, et al. Effects of interfacial microstructure on uniformity and thermal stability of AuNiGe ohmic contact to n-type GaAs. J Appl Phys, 1987, 62:582 doi: 10.1063/1.339860
[2]	Lin C, Lee C P. Comparison of Au/Ni/Ge, Au/Pd/Ge and Au/Pt/Ge ohmic contacts to n-type GaAs. J Appl Phys, 1990, 67:260 doi: 10.1063/1.345300
[3]	Ren F, FuUowan T R, Chu S N G, et al. Improved n-type GaAs ohmic contacts compatible with a chlorine-based dry-etch process. J Electron Mater, 1991, 20:305 doi: 10.1007/BF02657895
[4]	DelAlamo J A, Mizutani T. AuGeNi ohmic contacts to n-InP for FET applications. Solid-State Electron, 1988, 31:1635 doi: 10.1016/0038-1101(88)90011-1
[5]	Graham R J, Myhajlenko S, Steeds J W. High-resolution luminescence studies of indium phosphide under ohmic contacts. J Appl Phys, 1985, 57:1311 doi: 10.1063/1.334531
[6]	Anderson D A, Graham R J, Steeds J W. The influence of interfacial morphology and composition on the behaviour of AuGeNi contacts to InP. Semicond Sci Technol, 1988, 3:63 doi: 10.1088/0268-1242/3/2/001
[7]	Dunn J, Stringfellow G B. Annealed AuGe based ohmic contacts on InP with ion milling prior to metallization. J Electron Mater, 1990, 19:L1 doi: 10.1007/BF02651748
[8]	Yoder M N. ohmic contacts in GaAs. Solid-state Electron, 1980, 23(2):117 doi: 10.1016/0038-1101(80)90145-8
[9]	Wu D F, Daembkes H, Heime K. Noneutectic Au/Ge alloy ohmic contact technology for diffused N-channel GaAs MESFET. Journal of Semiconductors, 1984, 5:99 http://www.jos.ac.cn/bdtxbcn/ch/reader/view_abstract.aspx?file_no=200592542371969&flag=1
[10]	Baca A, Ren F, Zolper J, et al. A survey of ohmic contacts to Ⅲ-Ⅴ compound semiconductors. Thin Solid Films, 1997, 308/309:599 doi: 10.1016/S0040-6090(97)00439-2
[11]	Dimoulas A, Toriumi A, Mohney S E. Source and drain contacts for germanium and Ⅲ-Ⅴ FETs for digital logic. MRS Bull, 2009, 34:522 doi: 10.1557/mrs2009.140
[12]	Kim I. Pd/Si-based ohmic contacts to n-type InGaAs for AlGaAs/GaAs HBTs. Mater Lett, 2004, 58:1107 doi: 10.1016/j.matlet.2003.09.001
[13]	Yearsley J D, Lin J C, Hwang E, et al. Ultra low-resistance palladium silicide ohmic contacts to lightly doped n-InGaAs. J Appl Phys, 2012, 112:054510 doi: 10.1063/1.4748178
[14]	Marlow G S, Das M B. The effects of contact size and non-zero metal resistance on the determination of specific contact resistance. Solid-State Electron, 1982, 25(2):91 doi: 10.1016/0038-1101(82)90036-3
[15]	Berger H H. Models for contacts to planar devices. Solid-State Electron, 1972, 15(2):145 doi: 10.1016/0038-1101(72)90048-2
[16]	Anderson D A, Graham R J, Steeds J W. The influence of interfacial morphology and composition on the behaviour of AuGeNi contacts to InP. Semicond Sci Technol, 1988, 3:63 doi: 10.1088/0268-1242/3/2/001
[17]	Ivey D G, Wang D, Yang D. Au/Ge/Ni ohmic contacts to n-type InP. J Electron Mater, 1994, 23(5):441 doi: 10.1007/BF02671227
[18]	Ivey D G, Zhang L, Jian P. Interfacial reactions between palladium thin films and InP. J Mater Sci:Mater Electron, 1991, 2:21 doi: 10.1007/BF00695000

Fig. 1. Plots of specific contact resistance versus annealing time at various temperatures.

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Fig. 2. Surface morphology of samples annealed at (a) 350 ℃, 100 s, (b) 375 ℃, 80 s and (c) 470 ℃, 5 s.

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Fig. 3. (Color online) Sample morphology under the optical microscope. (a) 300 ℃, 100 s, gold. (b) 425 ℃, 60 s, covered with white spots. (c) 470 ℃, 5 s, yellow-white.

DownLoad: Full-Size Img PowerPoint

Fig. 4. XRD spectrum annealing at (a) 350 ℃, 100 s and (b) 470 ℃, 5 s.

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Fig. 5. TEM micrograph of the as-deposited sample.

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Fig. 6. TEM micrograph of the sample annealed at 300 ℃ for 100 s.

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Fig. 7. TEM micrograph of the sample annealed at 410 ℃ for 60 s.

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Fig. 8. NDR effect curve of InP transferred electron device with a Ni/Ge/Au/Ge/Ni/Au electrode annealed at 380 ℃ for 60 s.

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[1]	Shih Y C, Murakami M, Wilkie E L, et al. Effects of interfacial microstructure on uniformity and thermal stability of AuNiGe ohmic contact to n-type GaAs. J Appl Phys, 1987, 62:582 doi: 10.1063/1.339860
[2]	Lin C, Lee C P. Comparison of Au/Ni/Ge, Au/Pd/Ge and Au/Pt/Ge ohmic contacts to n-type GaAs. J Appl Phys, 1990, 67:260 doi: 10.1063/1.345300
[3]	Ren F, FuUowan T R, Chu S N G, et al. Improved n-type GaAs ohmic contacts compatible with a chlorine-based dry-etch process. J Electron Mater, 1991, 20:305 doi: 10.1007/BF02657895
[4]	DelAlamo J A, Mizutani T. AuGeNi ohmic contacts to n-InP for FET applications. Solid-State Electron, 1988, 31:1635 doi: 10.1016/0038-1101(88)90011-1
[5]	Graham R J, Myhajlenko S, Steeds J W. High-resolution luminescence studies of indium phosphide under ohmic contacts. J Appl Phys, 1985, 57:1311 doi: 10.1063/1.334531
[6]	Anderson D A, Graham R J, Steeds J W. The influence of interfacial morphology and composition on the behaviour of AuGeNi contacts to InP. Semicond Sci Technol, 1988, 3:63 doi: 10.1088/0268-1242/3/2/001
[7]	Dunn J, Stringfellow G B. Annealed AuGe based ohmic contacts on InP with ion milling prior to metallization. J Electron Mater, 1990, 19:L1 doi: 10.1007/BF02651748
[8]	Yoder M N. ohmic contacts in GaAs. Solid-state Electron, 1980, 23(2):117 doi: 10.1016/0038-1101(80)90145-8
[9]	Wu D F, Daembkes H, Heime K. Noneutectic Au/Ge alloy ohmic contact technology for diffused N-channel GaAs MESFET. Journal of Semiconductors, 1984, 5:99 http://www.jos.ac.cn/bdtxbcn/ch/reader/view_abstract.aspx?file_no=200592542371969&flag=1
[10]	Baca A, Ren F, Zolper J, et al. A survey of ohmic contacts to Ⅲ-Ⅴ compound semiconductors. Thin Solid Films, 1997, 308/309:599 doi: 10.1016/S0040-6090(97)00439-2
[11]	Dimoulas A, Toriumi A, Mohney S E. Source and drain contacts for germanium and Ⅲ-Ⅴ FETs for digital logic. MRS Bull, 2009, 34:522 doi: 10.1557/mrs2009.140
[12]	Kim I. Pd/Si-based ohmic contacts to n-type InGaAs for AlGaAs/GaAs HBTs. Mater Lett, 2004, 58:1107 doi: 10.1016/j.matlet.2003.09.001
[13]	Yearsley J D, Lin J C, Hwang E, et al. Ultra low-resistance palladium silicide ohmic contacts to lightly doped n-InGaAs. J Appl Phys, 2012, 112:054510 doi: 10.1063/1.4748178
[14]	Marlow G S, Das M B. The effects of contact size and non-zero metal resistance on the determination of specific contact resistance. Solid-State Electron, 1982, 25(2):91 doi: 10.1016/0038-1101(82)90036-3
[15]	Berger H H. Models for contacts to planar devices. Solid-State Electron, 1972, 15(2):145 doi: 10.1016/0038-1101(72)90048-2
[16]	Anderson D A, Graham R J, Steeds J W. The influence of interfacial morphology and composition on the behaviour of AuGeNi contacts to InP. Semicond Sci Technol, 1988, 3:63 doi: 10.1088/0268-1242/3/2/001
[17]	Ivey D G, Wang D, Yang D. Au/Ge/Ni ohmic contacts to n-type InP. J Electron Mater, 1994, 23(5):441 doi: 10.1007/BF02671227
[18]	Ivey D G, Zhang L, Jian P. Interfacial reactions between palladium thin films and InP. J Mater Sci:Mater Electron, 1991, 2:21 doi: 10.1007/BF00695000

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Received: 14 August 2013 Revised: 11 October 2013 Online: Published: 01 March 2014

Article Navigation > Journal of Semiconductors > 2014 > 35(3): 036001

Deqi Wu, Wuchang Ding, Shanshan Yang, Rui Jia, Zhi Jin, Xinyu Liu. Optimization of ohmic contact for InP-based transferred electronic devices[J]. Journal of Semiconductors, 2014, 35(3): 036001. doi: 10.1088/1674-4926/35/3/036001 ****D Q Wu, W C Ding, S S Yang, R Jia, Z Jin, X Y Liu. Optimization of ohmic contact for InP-based transferred electronic devices[J]. J. Semicond., 2014, 35(3): 036001. doi: 10.1088/1674-4926/35/3/036001.

Citation:

Deqi Wu, Wuchang Ding, Shanshan Yang, Rui Jia, Zhi Jin, Xinyu Liu. Optimization of ohmic contact for InP-based transferred electronic devices[J]. Journal of Semiconductors, 2014, 35(3): 036001. doi: 10.1088/1674-4926/35/3/036001 ****

D Q Wu, W C Ding, S S Yang, R Jia, Z Jin, X Y Liu. Optimization of ohmic contact for InP-based transferred electronic devices[J]. J. Semicond., 2014, 35(3): 036001. doi: 10.1088/1674-4926/35/3/036001.

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Optimization of ohmic contact for InP-based transferred electronic devices

DOI: 10.1088/1674-4926/35/3/036001

1.
Key Laboratory of Microelectronics Devices & Integrated Technology, Microwave Devices and Integrated Circuits Department, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
2.
School of Physics and Electrical Information Science, Ningxia University, Yinchuan 750021, China

Funds:

the Knowledge Innovation Program of the Chinese Academy of Sciences YYYJ1123

Project supported by the Knowledge Innovation Program of the Chinese Academy of Sciences (No. YYYJ1123)

More Information

Corresponding author: Jia Rui, Email:jiarui@ime.ac.cn
Received Date: 2013-08-14
Revised Date: 2013-10-11
Published Date: 2014-03-01

Abstract

Abstract

The effect of the annealing time and annealing temperature on Ni/Ge/Au electrode contacts deposited on the n-type InP contact layer has been studied using a circular transmission line model. The minimum specific contact resistance of 3.2×10^-7Ω·cm² was achieved on the low-doped n-type InP contact layer with a 40 s anneal at 425℃. In order to improve the ohmic contact and reduce the difficulty in the fabrication of the high doped InP epi-layer, the doping concentration in the InP contact layer was chosen to be 5×10¹⁸ cm^-3 in the fabrication of transferred electronic devices. Excellent differential negative resistance properties were obtained by an electron beam evaporating the Ni/Ge/Au/Ge/Ni/Au composite electrode on an InP epi-layer with a 60 s anneal at 380℃.
- circular transmission line model,
- specific contact resistance,
- InP,
- transferred electronic devices,
- differential negative resistance

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References(18)

References

[1]	Shih Y C, Murakami M, Wilkie E L, et al. Effects of interfacial microstructure on uniformity and thermal stability of AuNiGe ohmic contact to n-type GaAs. J Appl Phys, 1987, 62:582 doi: 10.1063/1.339860
[2]	Lin C, Lee C P. Comparison of Au/Ni/Ge, Au/Pd/Ge and Au/Pt/Ge ohmic contacts to n-type GaAs. J Appl Phys, 1990, 67:260 doi: 10.1063/1.345300
[3]	Ren F, FuUowan T R, Chu S N G, et al. Improved n-type GaAs ohmic contacts compatible with a chlorine-based dry-etch process. J Electron Mater, 1991, 20:305 doi: 10.1007/BF02657895
[4]	DelAlamo J A, Mizutani T. AuGeNi ohmic contacts to n-InP for FET applications. Solid-State Electron, 1988, 31:1635 doi: 10.1016/0038-1101(88)90011-1
[5]	Graham R J, Myhajlenko S, Steeds J W. High-resolution luminescence studies of indium phosphide under ohmic contacts. J Appl Phys, 1985, 57:1311 doi: 10.1063/1.334531
[6]	Anderson D A, Graham R J, Steeds J W. The influence of interfacial morphology and composition on the behaviour of AuGeNi contacts to InP. Semicond Sci Technol, 1988, 3:63 doi: 10.1088/0268-1242/3/2/001
[7]	Dunn J, Stringfellow G B. Annealed AuGe based ohmic contacts on InP with ion milling prior to metallization. J Electron Mater, 1990, 19:L1 doi: 10.1007/BF02651748
[8]	Yoder M N. ohmic contacts in GaAs. Solid-state Electron, 1980, 23(2):117 doi: 10.1016/0038-1101(80)90145-8
[9]	Wu D F, Daembkes H, Heime K. Noneutectic Au/Ge alloy ohmic contact technology for diffused N-channel GaAs MESFET. Journal of Semiconductors, 1984, 5:99 http://www.jos.ac.cn/bdtxbcn/ch/reader/view_abstract.aspx?file_no=200592542371969&flag=1
[10]	Baca A, Ren F, Zolper J, et al. A survey of ohmic contacts to Ⅲ-Ⅴ compound semiconductors. Thin Solid Films, 1997, 308/309:599 doi: 10.1016/S0040-6090(97)00439-2
[11]	Dimoulas A, Toriumi A, Mohney S E. Source and drain contacts for germanium and Ⅲ-Ⅴ FETs for digital logic. MRS Bull, 2009, 34:522 doi: 10.1557/mrs2009.140
[12]	Kim I. Pd/Si-based ohmic contacts to n-type InGaAs for AlGaAs/GaAs HBTs. Mater Lett, 2004, 58:1107 doi: 10.1016/j.matlet.2003.09.001
[13]	Yearsley J D, Lin J C, Hwang E, et al. Ultra low-resistance palladium silicide ohmic contacts to lightly doped n-InGaAs. J Appl Phys, 2012, 112:054510 doi: 10.1063/1.4748178
[14]	Marlow G S, Das M B. The effects of contact size and non-zero metal resistance on the determination of specific contact resistance. Solid-State Electron, 1982, 25(2):91 doi: 10.1016/0038-1101(82)90036-3
[15]	Berger H H. Models for contacts to planar devices. Solid-State Electron, 1972, 15(2):145 doi: 10.1016/0038-1101(72)90048-2
[16]	Anderson D A, Graham R J, Steeds J W. The influence of interfacial morphology and composition on the behaviour of AuGeNi contacts to InP. Semicond Sci Technol, 1988, 3:63 doi: 10.1088/0268-1242/3/2/001
[17]	Ivey D G, Wang D, Yang D. Au/Ge/Ni ohmic contacts to n-type InP. J Electron Mater, 1994, 23(5):441 doi: 10.1007/BF02671227
[18]	Ivey D G, Zhang L, Jian P. Interfacial reactions between palladium thin films and InP. J Mater Sci:Mater Electron, 1991, 2:21 doi: 10.1007/BF00695000

Optimization of ohmic contact for InP-based transferred electronic devices

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