Fig. 1.
The curve of the static etch rate with different pH adjusted by FA/O II chelate agent.
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| Citation: |
Haokun Yang, Yuling Liu, Ming Sun, Yingde Li. The micro morphology correction function of a silicon wafer CMP surface[J]. Journal of Semiconductors, 2014, 35(5): 053002. doi: 10.1088/1674-4926/35/5/053002
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H K Yang, Y L Liu, M Sun, Y D Li. The micro morphology correction function of a silicon wafer CMP surface[J]. J. Semicond., 2014, 35(5): 053002. doi: 10.1088/1674-4926/35/5/053002.
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The micro morphology correction function of a silicon wafer CMP surface
DOI: 10.1088/1674-4926/35/5/053002
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Abstract
The oxidation induced stacking faults (OISFs) exposed on the surface of polished silicon substrate are harmful to the electrical performance and reliability of the device region located on the wafer surface. This work investigates the characteristics of the novel nano colloidal silica alkaline slurry, including polyamine and complex non-ions surface surfactant. The experimental results show that when the pH value is higher than 10.1, the removal rate can be higher than 750 nm/min and the surface roughness can be lower than 0.3 nm (10×10 μm2). The surface OISFs existing on the wafer are efficiently controlled with the slurry, and the defect density on the polished wafer surface decreases greatly as well. -
References
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