Fig. 1.
$J$ –$V$ characteristics under 20 suns at room temperature for samples A, B and C.
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| Citation: |
E. Garduno-Nolasco, M. Missous, D. Donoval, J. Kovac, M. Mikolasek. Temperature dependence of InAs/GaAs quantum dots solar photovoltaic devices[J]. Journal of Semiconductors, 2014, 35(5): 054001. doi: 10.1088/1674-4926/35/5/054001
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E. Garduno-Nolasco, M. Missous, D. Donoval, J. Kovac, M. Mikolasek. Temperature dependence of InAs/GaAs quantum dots solar photovoltaic devices[J]. J. Semicond., 2014, 35(5): 054001. doi: 10.1088/1674-4926/35/5/054001.
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Temperature dependence of InAs/GaAs quantum dots solar photovoltaic devices
DOI: 10.1088/1674-4926/35/5/054001
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Abstract
This paper presents the temperature dependence measurements characterisation of several InAs/GaAs quantum dots (QDs) solar cell devices. The devices with cylindrical geometry were fabricated and characterised on-wafer under 20 suns in a temperature range from 300°K to 430°K. The temperature dependence parameters such as open circuit voltage, short circuit density current, fill factor and efficiency are studied in detail. The increase of temperature produces an enhancement of the short circuit current. However, the open circuit voltage is degraded because the temperature increases the recombination phenomena involved, as well as reducing the effective band gap of the semiconductor. -
References
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