J. Semicond. > 2015, Volume 36 > Issue 10 > 102005
|

SEMICONDUCTOR PHYSICS

Coupling effect of quantum wells on band structure

Jie Chen and Weiyou Zeng

+ Author Affiliations

 Corresponding author: Jie Chen, jiechen2004@126.com; zengwy lx@huat.edu.cn

DOI: 10.1088/1674-4926/36/10/102005

PDF

Abstract: The coupling effects of quantum wells on band structure are numerically investigated by using the Matlab programming language.In a one dimensional finite quantum well with the potential barrier V0, the calculation is performed by increasing the number of inserted barriers with the same height Vb, and by, respectively, varying the thickness ratio of separated wells to inserted barriers and the height ratio of Vb to V0.Our calculations show that coupling is strongly influenced by the above parameters of the inserted barriers and wells.When these variables change, the width of the energy bands and gaps can be tuned.Our investigation shows that it is possible for quantum wells to achieve the desired width of the bands and gaps.

Key words: coupling, quantum wells, band structure



[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
[9]
[10]
[11]
[12]
[13]
[14]
[15]
[16]
Fig. 1.  The model of QWs.

DownLoad: Full-Size Img PowerPoint
Fig. 2.  Coupled levels with the lower energy as function of the number of inserted barriers ($V_{\rm b}=600E_0$) in a finite single quantum well with $V_{0}=1000E_0$.

DownLoad: Full-Size Img PowerPoint
Fig. 3.  First 18 energy levels and formation of three bands in 5-period multiple QWs as function of the ratio $w/b$ for $V_{\rm b}=600E_0$ and $V_{\rm b}=1000E_0$.

DownLoad: Full-Size Img PowerPoint
Fig. 4.  First three bands,including 18 energy levels and their corresponding wavefunctions of 5-period multiple QWs as function of the position $z/L$ for $V_{\rm b}=600E_0$ and $V_0=1000E_0$.

DownLoad: Full-Size Img PowerPoint
Fig. 5.  First 18 energy levels and formation of three bands in 5-period multiple QWs as function of the ratio $V_{\rm b}/V_0$ for $V_0=1000E_0$.

DownLoad: Full-Size Img PowerPoint
[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
[9]
[10]
[11]
[12]
[13]
[14]
[15]
[16]

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2518 Times PDF downloads: 19 Times Cited by: 0 Times

    History

    Received: 07 November 2014 Revised: Online: Published: 01 October 2015

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 2015  >  36(10): 102005
      Jie Chen, Weiyou Zeng. Coupling effect of quantum wells on band structure[J]. Journal of Semiconductors, 2015, 36(10): 102005. doi: 10.1088/1674-4926/36/10/102005 ****J Chen, W Y Zeng. Coupling effect of quantum wells on band structure[J]. J. Semicond., 2015, 36(10): 102005. doi: 10.1088/1674-4926/36/10/102005.
      Citation:
      Jie Chen, Weiyou Zeng. Coupling effect of quantum wells on band structure[J]. Journal of Semiconductors, 2015, 36(10): 102005. doi: 10.1088/1674-4926/36/10/102005 ****
      J Chen, W Y Zeng. Coupling effect of quantum wells on band structure[J]. J. Semicond., 2015, 36(10): 102005. doi: 10.1088/1674-4926/36/10/102005.
      shu

      Coupling effect of quantum wells on band structure

      DOI: 10.1088/1674-4926/36/10/102005

      • School of Science, Hubei University of Automotive Technology, Shiyan 442002, China

      More Information

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return