Fig. 1.
(a) Schematic of 4T SRAM cell. (b) Simulation results of 4T-cell operations.
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| Citation: |
Xinhong Hong, Liyang Pan, Wendi Zhang, Dongmei Ji, Dong Wu, Chen Shen, Jun Xu. Simulation and research on a 4T-cell based duplication redundancy SRAM for SEU radiation hardening[J]. Journal of Semiconductors, 2015, 36(11): 114003. doi: 10.1088/1674-4926/36/11/114003
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X H Hong, L Y Pan, W D Zhang, D M Ji, D Wu, C Shen, J Xu. Simulation and research on a 4T-cell based duplication redundancy SRAM for SEU radiation hardening[J]. J. Semicond., 2015, 36(11): 114003. doi: 10.1088/1674-4926/36/11/114003.
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Simulation and research on a 4T-cell based duplication redundancy SRAM for SEU radiation hardening
DOI: 10.1088/1674-4926/36/11/114003
More Information
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Abstract
A novel 4T-cell based duplication redundancy SRAM is proposed for SEU radiation hardening applications. The memory cell is designed with a 65-nm low leakage process; the operation principle and the SEU radiation hardening mechanism are discussed in detail. The SEE characteristics and failure mechanism are also studied with a 3-D device simulator. The results show that the proposed SRAM structure exhibits high SEU hardening performance with a small cell size.-
Keywords:
- SRAM,
- SEE,
- SEU,
- radiation hardening,
- 3-D simulation
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References
[1] [2] [3] [4] [5] [6] [7] [8] [9] [10] [11] [12] [13] [14] -
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