Fig. 1.
(Color online) The electrical characteristics of BC-PDSOI device before and after heavy ion exposure. (a) Output characteristics. (b) Transfer characteristics. (c) Transconductance.
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| Citation: |
Weikang Wu, Xia An, Fei Tan, Hui Feng, Yehua Chen, Jingjing Liu, Xing Zhang, Ru Huang. Effects of heavy ion irradiation on ultra-deep-submicron partially-depleted SOI devices[J]. Journal of Semiconductors, 2015, 36(11): 114004. doi: 10.1088/1674-4926/36/11/114004
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W K Wu, X An, F Tan, H Feng, Y H Chen, J J Liu, X Zhang, R Huang. Effects of heavy ion irradiation on ultra-deep-submicron partially-depleted SOI devices[J]. J. Semicond., 2015, 36(11): 114004. doi: 10.1088/1674-4926/36/11/114004.
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Effects of heavy ion irradiation on ultra-deep-submicron partially-depleted SOI devices
DOI: 10.1088/1674-4926/36/11/114004
More Information
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Abstract
The effects of the physical damages induced by heavy ion irradiation on the performance of partially-depleted SOI devices are experimentally investigated. After heavy ion exposure, different degradation phenomena are observed due to the random strike of heavy ions. A decrease of the saturation current and transconductance, and an enhanced gate-induced drain leakage current are observed, which are mainly attributed to the displacement damages that may be located in the channel, the depletion region of the drain/body junction or the gate-to-drain overlap region. Further, PDSOI devices with and without body contact are compared, which reveals the differences in the threshold voltage shift, the drain-induced barrier lowing effect, the transconductance and the kink effect. The results may provide a guideline for radiation hardened design.-
Keywords:
- heavy ion,
- displacement damages,
- PDSOI,
- performance degradation
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References
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