J. Semicond. > 2015, Volume 36 > Issue 3 > 034004
|

SEMICONDUCTOR DEVICES

Voltage assisted control of spin-transfer nano-oscillators

Bahniman Ghosh1 and Gaurav Solanki2

+ Author Affiliations

 Corresponding author: Bahniman Ghosh, E-mail: bghosh@utexas.edu

DOI: 10.1088/1674-4926/36/3/034004

PDF

Abstract: The spin-transfer nano-oscillator (STNO) has recently acquired a huge amount of research interest, due to its promising easy tunability along with the miniature size. The output frequency control of an STNO through magnetic field and current has been examined almost to its full extent; however, there are issues that still need to be addressed. Here, we propose a novel way of voltage control of the output frequency of an STNO, and alongside reducing its power requirement.

Key words: spin-transfer nano-oscillator, voltage controlled magnetic anisotropy, tunnelling magnetoresistance



[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
[9]
[10]
[11]
[12]
[13]
[14]
[15]
[16]
[17]
[18]
[19]
[20]
Fig. 1.  (a) A typical device configuration of an STNO. (b) Typical oscillation produced by an STNO.

DownLoad: Full-Size Img PowerPoint
Fig. 2.  Proposed structure of voltage (assisted) controlled STNO.

DownLoad: Full-Size Img PowerPoint
Fig. 3.  Frequency dependence on applied current in normal STNO.

DownLoad: Full-Size Img PowerPoint
Fig. 4.  Effect of VCMA on STNO as compared directly with the natural state, i.e. an inert STNO at currents of (a) 0.6 mA, (b) 0.7 mA, (c) 0.8 mA.

DownLoad: Full-Size Img PowerPoint
Fig. 5.  Effect of oxide material at 0.6 mA.

DownLoad: Full-Size Img PowerPoint
Fig. 6.  Effect of oxide material at 0.7 mA.

DownLoad: Full-Size Img PowerPoint
Fig. 7.  Effect of oxide material at 0.8 mA.

DownLoad: Full-Size Img PowerPoint
DownLoad: CSV
[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
[9]
[10]
[11]
[12]
[13]
[14]
[15]
[16]
[17]
[18]
[19]
[20]

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2408 Times PDF downloads: 25 Times Cited by: 0 Times

    History

    Received: 13 August 2014 Revised: Online: Published: 01 March 2015

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 2015  >  36(3): 034004
      Bahniman Ghosh, Gaurav Solanki. Voltage assisted control of spin-transfer nano-oscillators[J]. Journal of Semiconductors, 2015, 36(3): 034004. doi: 10.1088/1674-4926/36/3/034004 ****B Ghosh, G Solanki. Voltage assisted control of spin-transfer nano-oscillators[J]. J. Semicond., 2015, 36(3): 034004. doi: 10.1088/1674-4926/36/3/034004.
      Citation:
      Bahniman Ghosh, Gaurav Solanki. Voltage assisted control of spin-transfer nano-oscillators[J]. Journal of Semiconductors, 2015, 36(3): 034004. doi: 10.1088/1674-4926/36/3/034004 ****
      B Ghosh, G Solanki. Voltage assisted control of spin-transfer nano-oscillators[J]. J. Semicond., 2015, 36(3): 034004. doi: 10.1088/1674-4926/36/3/034004.
      shu

      Voltage assisted control of spin-transfer nano-oscillators

      DOI: 10.1088/1674-4926/36/3/034004
      • 1.

        Microelectronics Research Center, 10100 Burnet Road, University of Texas at Austin, Austin, TX, 78758, USA

      • 2.

        Department of Electrical Engineering, Indian Institute of Technology Kanpur, Kanpur 208016, India

      More Information
      • Corresponding author: E-mail: bghosh@utexas.edu
      • Received Date: 2014-08-13
      • Accepted Date: 2014-10-28
      • Published Date: 2015-01-25

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return