Fig. 1.
Structure and equivalent circuit of IGBT.
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| Citation: |
Xiaoli Tian, Jiang Lu, Yuan Teng, Wenliang Zhang, Shuojin Lu, Yangjun Zhu. Backside optimization for improving avalanche breakdown behavior of 4.5 kV IGBT[J]. Journal of Semiconductors, 2015, 36(3): 034008. doi: 10.1088/1674-4926/36/3/034008
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X L Tian, J Lu, Y Teng, W L Zhang, S J Lu, Y J Zhu. Backside optimization for improving avalanche breakdown behavior of 4.5 kV IGBT[J]. J. Semicond., 2015, 36(3): 034008. doi: 10.1088/1674-4926/36/3/034008.
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Backside optimization for improving avalanche breakdown behavior of 4.5 kV IGBT
DOI: 10.1088/1674-4926/36/3/034008
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Abstract
The static avalanche breakdown behavior of 4.5 kV high-voltage IGBT is studied by theory analysis and experiment. The avalanche breakdown behaviors of the 4.5 kV IGBTs with different backside structures are investigated and compared by using the curve tracer. The results show that the snap back behavior of the breakdown waveform is related to the bipolar PNP gain, which leads to the deterioration of the breakdown voltage. There are two ways to optimize the backside structure, one is increasing the implant dose of the N+ buffer layer, the other is decreasing the implant dose of the P+ collector layer. It is found that the optimized structure is effective in suppressing the snap back behavior and improving the breakdown characteristic of high voltage IGBT. -
References
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