J. Semicond. > 2015, Volume 36 > Issue 6 > 064004
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SEMICONDUCTOR DEVICES

Numerical investigation of a double-junction a:SiGe thin-film solar cell including the multi-trench region

K. Kacha1, F. Djeffal1, 2, H. Ferhati1, D. Arar1 and M. Meguellati1

+ Author Affiliations

 Corresponding author: F. Djeffal, Email: djeffal@univ-batna.dz;faycaldzdz@hotmail.com

DOI: 10.1088/1674-4926/36/6/064004

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Abstract: We present a new approach based on the multi-trench technique to improve the electrical performances, which are the fill factor and the electrical efficiency. The key idea behind this approach is to introduce a new multi-trench region in the intrinsic layer, in order to modulate the total resistance of the solar cell. Based on 2-D numerical investigation and optimization of amorphous SiGe double-junction (a-Si:H/a-SiGe:H) thin film solar cells, in the present paper numerical models of electrical and optical parameters are developed to explain the impact of the multi-trench technique on the improvement of the double-junction solar cell electrical behavior for high performance photovoltaic applications. In this context, electrical characteristics of the proposed design are analyzed and compared with conventional amorphous silicon double-junction thin-film solar cells.

Key words: amorphous, efficiency, SiGe, thin-film, solar cell, multi-trench



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Fig. 1.  Cross sectional view of the investigated amorphous double-junction SiGe thin-film solar cell.

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Fig. 2.  Equivalent electrical circuit of the investigated solar cell.

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Fig. 3.  Variation of solar cell efficiency as function of (a) trench doping concentration,(b) trench width and (c) trench thickness.

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Fig. 4.  Efficiency of the investigated solar cell as a function of the number of trenches in the frontal intrinsic layer.

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Fig. 5.  Efficiency of the investigated solar cell as a function of Ge content in the back amorphous SiGe intrinsic layer ($N=$ 3).

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Fig. 6.  Solar cell performance with different back intrinsic region thickness values,Ge mole fraction $=$ 0.5 and $N=$ 3.

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Fig. 7.  $I$-$V$ curves of the optimized multi-trench and conventional solar cells ($N=3)$.

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Table 1.   Optimized design parameters used in our investigation.

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Table 2.   Optimized solar cell performances.

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    Received: 15 November 2014 Revised: Online: Published: 01 June 2015

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      Article Navigation >  Journal of Semiconductors  > 2015  >  36(6): 064004
      K. Kacha, F. Djeffal, H. Ferhati, D. Arar, M. Meguellati. Numerical investigation of a double-junction a:SiGe thin-film solar cell including the multi-trench region[J]. Journal of Semiconductors, 2015, 36(6): 064004. doi: 10.1088/1674-4926/36/6/064004 ****K. Kacha, F. Djeffal, H. Ferhati, D. Arar, M. Meguellati. Numerical investigation of a double-junction a:SiGe thin-film solar cell including the multi-trench region[J]. J. Semicond., 2015, 36(6): 064004. doi: 10.1088/1674-4926/36/6/064004.
      Citation:
      K. Kacha, F. Djeffal, H. Ferhati, D. Arar, M. Meguellati. Numerical investigation of a double-junction a:SiGe thin-film solar cell including the multi-trench region[J]. Journal of Semiconductors, 2015, 36(6): 064004. doi: 10.1088/1674-4926/36/6/064004 ****
      K. Kacha, F. Djeffal, H. Ferhati, D. Arar, M. Meguellati. Numerical investigation of a double-junction a:SiGe thin-film solar cell including the multi-trench region[J]. J. Semicond., 2015, 36(6): 064004. doi: 10.1088/1674-4926/36/6/064004.
      shu

      Numerical investigation of a double-junction a:SiGe thin-film solar cell including the multi-trench region

      DOI: 10.1088/1674-4926/36/6/064004
      • 1.

        LEA, Department of Electronics, University of Batna, Batna 05000, Algeria

      • 2.

        LEPCM, University of Batna, Batna 05000, Algeria

      More Information
      • Corresponding author: Email: djeffal@univ-batna.dz;faycaldzdz@hotmail.com
      • Received Date: 2014-11-15
      • Accepted Date: 2015-01-18
      • Published Date: 2015-01-25

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