J. Semicond. > 2015, Volume 36 > Issue 6 > 064006
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SEMICONDUCTOR DEVICES

Comparison of on-wafer calibrations for THz InP-based PHEMTs applications

Zhiming Wang1, , Hui Huang2, Zhifu Hu3, Zhuobin Zhao1, Xudong Wang1, 3, Xiaobin Luo1, Jun Liu1 and Songyuan Yang1

+ Author Affiliations

 Corresponding author: Zhiming Wang, Email: wangzhiming872@163.com

DOI: 10.1088/1674-4926/36/6/064006

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Abstract: A quantitative comparison of multiline TRL (thru-reflect-line) and LRM (line-reflect-match) on-wafer calibrations for scattering parameters (S-parameters) measurement of InP-based PHEMTs is presented. The comparison is undertaken for the first time and covers a frequency range from 70 kHz to 110 GHz. It is demonstrated that the accuracy of multiline TRL and LRM calibration is in good agreement. Both methods outperform the conventional SOLT calibration in the full frequency band up to 110 GHz. Then the excellent RF performance is obtained by extrapolation on the basis of inflection point, including a maximum current gain cut-off frequency ft of 247 GHz and a maximum oscillation frequency fmax of 392 GHz. The small-signal model based on LRM calibration is established as well. The S-parameters of the model are consistent with the measured from 1 to 110 GHz.

Key words: on-wafer, calibration, scattering parameters, PHEMTs, small-signal model



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Fig. 1.  (Color online) $S$-parameter comparisons of LRM and multi-TRL.

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Fig. 2.  $S_{11}$ comparison of SOLT and multi-TRL calibration.

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Fig. 3.  $S_{21}$ comparison of SOLT and multi-TRL calibration.

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Fig. 4.  Comparison of the extracted device parameters $C_{\rm gs}$.

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Fig. 5.  Comparison of measured (LRM) and extrapolated (SOLT) gain @ 90 GHz.

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Fig. 6.  $H_{21}$,MAG/MSG and stability factor $k$ versus frequency.

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Fig. 7.  Small-signal equivalent circuit model of this PHEMT.

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Fig. 8.  (Color online) The $S$-parameters fitting curves.

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Table 1.   Small-signal equivalent circuit model parameters.

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    Received: 29 November 2014 Revised: Online: Published: 01 June 2015

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      Article Navigation >  Journal of Semiconductors  > 2015  >  36(6): 064006
      Zhiming Wang, Hui Huang, Zhifu Hu, Zhuobin Zhao, Xudong Wang, Xiaobin Luo, Jun Liu, Songyuan Yang. Comparison of on-wafer calibrations for THz InP-based PHEMTs applications[J]. Journal of Semiconductors, 2015, 36(6): 064006. doi: 10.1088/1674-4926/36/6/064006 ****Z M Wang, H Huang, Z F Hu, Z B Zhao, X D Wang, X B Luo, J Liu, S Y Yang. Comparison of on-wafer calibrations for THz InP-based PHEMTs applications[J]. J. Semicond., 2015, 36(6): 064006. doi: 10.1088/1674-4926/36/6/064006.
      Citation:
      Zhiming Wang, Hui Huang, Zhifu Hu, Zhuobin Zhao, Xudong Wang, Xiaobin Luo, Jun Liu, Songyuan Yang. Comparison of on-wafer calibrations for THz InP-based PHEMTs applications[J]. Journal of Semiconductors, 2015, 36(6): 064006. doi: 10.1088/1674-4926/36/6/064006 ****
      Z M Wang, H Huang, Z F Hu, Z B Zhao, X D Wang, X B Luo, J Liu, S Y Yang. Comparison of on-wafer calibrations for THz InP-based PHEMTs applications[J]. J. Semicond., 2015, 36(6): 064006. doi: 10.1088/1674-4926/36/6/064006.
      shu

      Comparison of on-wafer calibrations for THz InP-based PHEMTs applications

      DOI: 10.1088/1674-4926/36/6/064006
      • 1.

        Beijing Key Laboratory of Millimeter Wave and Terahertz Technology, Beijing Institute of Technology, Beijing 100081, China

      • 2.

        National Institute of Metrology, Beijing 100029, China

      • 3.

        Hebei Semiconductor Research Institute, Shijiazhuang 050051, China

      Funds:

      Project supported by the National Natural Science Foundation of China (No. 61275107).

      More Information
      • Corresponding author: Email: wangzhiming872@163.com
      • Received Date: 2014-11-29
      • Accepted Date: 2015-01-19
      • Published Date: 2015-01-25

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