Comparison of on-wafer calibrations for THz InP-based PHEMTs applications

Zhiming Wang; Hui Huang; Zhifu Hu; Zhuobin Zhao; Xudong Wang; Xiaobin Luo; Jun Liu; Songyuan Yang

doi:10.1088/1674-4926/36/6/064006

J. Semicond. > 2015, Volume 36 > Issue 6 > 064006

SEMICONDUCTOR DEVICES

Comparison of on-wafer calibrations for THz InP-based PHEMTs applications

Zhiming Wang^1,, Hui Huang², Zhifu Hu³, Zhuobin Zhao¹, Xudong Wang^{1, 3}, Xiaobin Luo¹, Jun Liu¹ and Songyuan Yang¹

+ Author Affiliations

Corresponding author: Zhiming Wang, Email: wangzhiming872@163.com

DOI: 10.1088/1674-4926/36/6/064006

Abstract: A quantitative comparison of multiline TRL (thru-reflect-line) and LRM (line-reflect-match) on-wafer calibrations for scattering parameters (S-parameters) measurement of InP-based PHEMTs is presented. The comparison is undertaken for the first time and covers a frequency range from 70 kHz to 110 GHz. It is demonstrated that the accuracy of multiline TRL and LRM calibration is in good agreement. Both methods outperform the conventional SOLT calibration in the full frequency band up to 110 GHz. Then the excellent RF performance is obtained by extrapolation on the basis of inflection point, including a maximum current gain cut-off frequency f_t of 247 GHz and a maximum oscillation frequency f_max of 392 GHz. The small-signal model based on LRM calibration is established as well. The S-parameters of the model are consistent with the measured from 1 to 110 GHz.

Key words: on-wafer, calibration, scattering parameters, PHEMTs, small-signal model

References

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Fig. 1. (Color online)

$S$ -parameter comparisons of LRM and multi-TRL.

DownLoad: Full-Size Img PowerPoint

Fig. 2.

$S_{11}$ comparison of SOLT and multi-TRL calibration.

DownLoad: Full-Size Img PowerPoint

Fig. 3.

$S_{21}$ comparison of SOLT and multi-TRL calibration.

DownLoad: Full-Size Img PowerPoint

Fig. 4. Comparison of the extracted device parameters

$C_{\rm gs}$ .

DownLoad: Full-Size Img PowerPoint

Fig. 5. Comparison of measured (LRM) and extrapolated (SOLT) gain @ 90 GHz.

DownLoad: Full-Size Img PowerPoint

Fig. 6.

$H_{21}$ ,MAG/MSG and stability factor

$k$ versus frequency.

DownLoad: Full-Size Img PowerPoint

Fig. 7. Small-signal equivalent circuit model of this PHEMT.

DownLoad: Full-Size Img PowerPoint

Fig. 8. (Color online) The

$S$ -parameters fitting curves.

DownLoad: Full-Size Img PowerPoint

Table 1. Small-signal equivalent circuit model parameters.

DownLoad: CSV

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1.	Zhao, Z., Wang, Z., Liu, J. et al. Design of 80-120 GHz broadband monolithic amplifier using self-devised InP PHEMT. 2016. doi:10.1109/APMC.2015.7413146
2.	Zhuobin, Z., Zhiming, W., Jun, L. et al. An 85-115 GHz MMIC amplifier using self-designed 90-nm InP PHEMT. International Conference on Communication Technology Proceedings, ICCT, 2016. doi:10.1109/ICCT.2015.7399786
3.	Wang, Z.-M., Luo, X.-B., Zhao, Z.-B. et al. A novel large-signal model for InP MMIC applications at 110GHz. IEICE Electronics Express, 2015, 12(18): 20150686. doi:10.1587/elex.12.20150686

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Zhiming Wang, Hui Huang, Zhifu Hu, Zhuobin Zhao, Xudong Wang, Xiaobin Luo, Jun Liu, Songyuan Yang. Comparison of on-wafer calibrations for THz InP-based PHEMTs applications[J]. Journal of Semiconductors, 2015, 36(6): 064006. doi: 10.1088/1674-4926/36/6/064006

Z M Wang, H Huang, Z F Hu, Z B Zhao, X D Wang, X B Luo, J Liu, S Y Yang. Comparison of on-wafer calibrations for THz InP-based PHEMTs applications[J]. J. Semicond., 2015, 36(6): 064006. doi: 10.1088/1674-4926/36/6/064006.

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Received: 29 November 2014 Revised: Online: Published: 01 June 2015

A quantitative comparison of multiline TRL (thru-reflect-line) and LRM (line-reflect-match) on-wafer calibrations for scattering parameters (S-parameters) measurement of InP-based PHEMTs is presented. The comparison is undertaken for the first time and covers a frequency range from 70 kHz to 110 GHz. It is demonstrated that the accuracy of multiline TRL and LRM calibration is in good agreement. Both methods outperform the conventional SOLT calibration in the full frequency band up to 110 GHz. Then the excellent RF performance is obtained by extrapolation on the basis of inflection point, including a maximum current gain cut-off frequency f_t of 247 GHz and a maximum oscillation frequency f_max of 392 GHz. The small-signal model based on LRM calibration is established as well. The S-parameters of the model are consistent with the measured from 1 to 110 GHz.

Comparison of on-wafer calibrations for THz InP-based PHEMTs applications

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