J. Semicond. > 2015, Volume 36 > Issue 7 > 073005
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SEMICONDUCTOR MATERIALS

Effect of Ge-GeO2 co-doping on non-ohmic behaviour of TiO2-V2O5-Y2O3 varistor ceramics

Kunyong Kang1, 2, 3, Guoyou Gan1, 2, 3, , Jikang Yan1, 2, 3, Jianhong Yi1, 2, 3, Jiamin Zhang1, 2, 3, Jinghong Du1, 2, 3, Wenchao Zhao1, 2, 3 and Xuequan Rong1, 2, 3

+ Author Affiliations

 Corresponding author: Guoyou Gan, E-mail: ganguoyou@sina.com

DOI: 10.1088/1674-4926/36/7/073005

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Abstract: An investigation was made into the effect of doping with the elemental crystal Ge or/and GeO2 on the TiO2-V2O5-Y2O3 varistor ceramics. The result shows that as the doping contents of V2O5 and Y2O3 are 0.5 mol%, respectively, co-doping with 0.3 mol% Ge and 0.9 mol% GeO2 makes the highest α value (α = 12.8), the lowest breakdown voltage V1mA (V1mA = 15.8 V/mm) and the highest grain boundary barrier ΦB (ΦB = 1.48 eV), which is remarkably superior to the TiO2-V2O5-Y2O3 varistor ceramics undoped with Ge and GeO2 and mono-doped with Ge or GeO2. The TiO2-V2O5-Y2O3-Ge-GeO2 ceramic has the prospect of becoming a novel varistor ceramic with excellent electrical properties.

Key words: TiO2 varistor, co-doping, nonlinear coefficient, breakdown voltage, Ge and GeO2



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Fig. 1.  $J$-$E$ characteristics of TiO$_{2}$-V$_{2}$O$_{5}$-Y$_{2}$O$_{3}$ ceramics: (a) ({\#}1) undoped, ({\#}2, {\#}3) mono-doped Ge/GeO$_{2}$ and ({\#}4) co-doped with Ge-GeO$_{2}$, (b) with different doping content of Ge and GeO$_{2}$.

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Fig. 2.  SEM image of TiO$_{2}$-V$_{2}$O$_{5}$-Y$_{2}$O$_{3}$ ceramics: (#1) undoped and doped with (#2) 0.1 mol% Ge, (#3) 0.3 mol% GeO$_{2}$, (#4) 0.1 mol% Ge and 0.3 mol% GeO$_{2}$, (#6) 0.3 mol% Ge and 0.9 mol% GeO$_{2}$ and (#7) 0.4 mol% Ge and 1.2 mol% GeO$_{2}$.

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Fig. 3.  EDAX spectrum of TiO$_{2}$-V$_{2}$O$_{5}$-Y$_{2}$O$_{3}$ ceramic: (#6) doped with 0.3 mol% Ge and 0.9 mol% GeO$_{2}$.

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Fig. 4.  X-ray diffraction patterns of Ge and TiO$_{2}$-V$_{2}$O$_{5}$-Y$_{2}$O$_{3}$ ceramics: (#1) undoped, (#2, #3) mono-doped with Ge/GeO$_{2}$ and (#6, #7) co-doped with Ge-GeO$_{2}$.

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Fig. 5.  XPS spectra: (a) the full spectrum of the sample #2, #3 and #6, (b) the narrow spectrum of Ge in the sample #2, #3 and #6, (c) peak split spectrum of Ge of the sample #6.

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Table 1.   Electrical properties of TiO$_{2}$-V$_{2}$O$_{5}$-Y$_{2}$O$_{3}$ ceramics with different doping content of Ge and GeO$_{2}$.

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Table 2.   Diffraction peak change near 27.5$^\circ$ of TiO$_{2}$-V$_{2}$O$_{5}$-Y$_{2}$O$_{3}$-based ceramics undoped, mono-doped, and co-doped with Ge and GeO$_{2}$.

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Table 3.   Diffraction peak change near 27.5$^\circ$ of TiO$_{2}$--V$_{2}$O$_{5}$--Y$_{2}$O$_{3}$-based ceramics undoped, mono-doped, and co-doped with Ge and GeO$_{2}$.

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    Received: 18 November 2014 Revised: Online: Published: 01 July 2015

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      Article Navigation >  Journal of Semiconductors  > 2015  >  36(7): 073005
      Kunyong Kang, Guoyou Gan, Jikang Yan, Jianhong Yi, Jiamin Zhang, Jinghong Du, Wenchao Zhao, Xuequan Rong. Effect of Ge-GeO2 co-doping on non-ohmic behaviour of TiO2-V2O5-Y2O3 varistor ceramics[J]. Journal of Semiconductors, 2015, 36(7): 073005. doi: 10.1088/1674-4926/36/7/073005 ****K Y Kang, G Y Gan, J K Yan, J H Yi, J M Zhang, J H Du, W C Zhao, X Q Rong. Effect of Ge-GeO2 co-doping on non-ohmic behaviour of TiO2-V2O5-Y2O3 varistor ceramics[J]. J. Semicond., 2015, 36(7): 073005. doi: 10.1088/1674-4926/36/7/073005.
      Citation:
      Kunyong Kang, Guoyou Gan, Jikang Yan, Jianhong Yi, Jiamin Zhang, Jinghong Du, Wenchao Zhao, Xuequan Rong. Effect of Ge-GeO2 co-doping on non-ohmic behaviour of TiO2-V2O5-Y2O3 varistor ceramics[J]. Journal of Semiconductors, 2015, 36(7): 073005. doi: 10.1088/1674-4926/36/7/073005 ****
      K Y Kang, G Y Gan, J K Yan, J H Yi, J M Zhang, J H Du, W C Zhao, X Q Rong. Effect of Ge-GeO2 co-doping on non-ohmic behaviour of TiO2-V2O5-Y2O3 varistor ceramics[J]. J. Semicond., 2015, 36(7): 073005. doi: 10.1088/1674-4926/36/7/073005.
      shu

      Effect of Ge-GeO2 co-doping on non-ohmic behaviour of TiO2-V2O5-Y2O3 varistor ceramics

      DOI: 10.1088/1674-4926/36/7/073005
      • 1.

        Faculty of Materials Science and Engineering, Kunming University of Science and Technology, Kunming 650093, China

      • 2.

        Key Laboratory of Advance Materials of Yunnan Province, Kunming 650093, China

      • 3.

        Key Laboratory of Advance Materials of Precious-Nonferrous Metals, Ministry of Education, Kunming 650093, China

      Funds:

      Project supported by the National Natural Science Foundation of China (Nos. 51262017, 51362017).

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      • Corresponding author: E-mail: ganguoyou@sina.com
      • Received Date: 2014-11-18
      • Accepted Date: 2015-02-10
      • Published Date: 2015-01-25

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