J. Semicond. > 2015, Volume 36 > Issue 7 > 076001
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SEMICONDUCTOR TECHNOLOGY

Mechanism of the development of a weakly alkaline barrier slurry without BTA and oxidizer

Xiaodong Luan, Yuling Liu, Xinhuan Niu and Juan Wang

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 Corresponding author: Xiaodong Luan, E-mail: luanyz1988@126.com

DOI: 10.1088/1674-4926/36/7/076001

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Abstract: Controllable removal rate selectivity with various films (Cu, Ta, SiO2) is a challenging job in barrier CMP. H2O2 as an oxidizer and benzotriazole (BTA) as an inhibitor is considered to be an effective method in barrier CMP. Slurries that contain hydrogen peroxide have a very short shelf life because H2O2 is unstable and easily decomposed. BTA can cause post-CMP challenges, such as organic residue, toxicity and particle adhesion. We have been engaged in studying a weakly alkaline barrier slurry without oxidizer and benzotriazole. Based on these works, the objective of this paper is to discuss the mechanism of the development of the barrier slurry without oxidizer and benzotriazole by studying the effects of the different components (containing colloidal silica, FA/O complexing agent, pH of polishing solution and guanidine nitrate) on removal rate selectivity. The possible related polishing mechanism has also been proposed.

Key words: CMP, barrier slurry, selectivity, cleaning



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Fig. 1.  (Color online) Schematic representation of copper dishing and dielectric erosion.

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Fig. 2.  Cu, Ta and SiO$_{2}$ polishing rates as a function of abrasive concentration.

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Fig. 3.  Cu, Ta and SiO$_{2}$ polishing rates as a function of solution pH.

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Fig. 4.  Cu, Ta and SiO$_{2}$ polish rates as a function of FA/O chelating agent concentration.

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Fig. 5.  Cu, Ta and SiO$_{2}$ polishing rates as a function of guanidine nitrate concentration.

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Fig. 6.  Dishing as a function of polishing time.

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Fig. 7.  Erosion as a function of polishing time.

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Fig. 8.  SEM images of patterned wafer after post-CMP cleaning.

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Table 1.   Three-inch sample polishing recipe.

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Table 2.   The mean wire line resistance variation along with the polishing time.

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    Received: 20 December 2014 Revised: Online: Published: 01 July 2015

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      Article Navigation >  Journal of Semiconductors  > 2015  >  36(7): 076001
      Xiaodong Luan, Yuling Liu, Xinhuan Niu, Juan Wang. Mechanism of the development of a weakly alkaline barrier slurry without BTA and oxidizer[J]. Journal of Semiconductors, 2015, 36(7): 076001. doi: 10.1088/1674-4926/36/7/076001 ****X D Luan, Y L Liu, X H Niu, J Wang. Mechanism of the development of a weakly alkaline barrier slurry without BTA and oxidizer[J]. J. Semicond., 2015, 36(7): 076001. doi: 10.1088/1674-4926/36/7/076001.
      Citation:
      Xiaodong Luan, Yuling Liu, Xinhuan Niu, Juan Wang. Mechanism of the development of a weakly alkaline barrier slurry without BTA and oxidizer[J]. Journal of Semiconductors, 2015, 36(7): 076001. doi: 10.1088/1674-4926/36/7/076001 ****
      X D Luan, Y L Liu, X H Niu, J Wang. Mechanism of the development of a weakly alkaline barrier slurry without BTA and oxidizer[J]. J. Semicond., 2015, 36(7): 076001. doi: 10.1088/1674-4926/36/7/076001.
      shu

      Mechanism of the development of a weakly alkaline barrier slurry without BTA and oxidizer

      DOI: 10.1088/1674-4926/36/7/076001

      • Institute of Microelectronics, Hebei University of Technology, Tianjin 300130, China

      Funds:

      Project supported by the Major National Science and Technology Special Projects (No. 2009ZX02308), the National Natural Science Foundation of Hebei Province, China (No. E2013202247), and the Department of Education-Funded Research Projects of Hebei Province, China (No. QN2014208).

      More Information
      • Corresponding author: E-mail: luanyz1988@126.com
      • Received Date: 2014-12-20
      • Accepted Date: 2015-02-06
      • Published Date: 2015-01-25

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