J. Semicond. > 2016, Volume 37 > Issue 2 > 026002
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SEMICONDUCTOR TECHNOLOGY

The effect of nitridation and sulfur passivation for In0.53Ga0.47As surfaces on their Al/Al2O3/InGaAs MOS capacitors properties

Zizeng Lin1, 2, Mingmin Cao1, 2, Shengkai Wang2, Qi Li1, Gongli Xiao1, Xi Gao1, Honggang Liu2 and Haiou Li1,

+ Author Affiliations

 Corresponding author: Haiou Li, seagull_1228@163.com

DOI: 10.1088/1674-4926/37/2/026002

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Abstract: The impact of nitridation and sulfur passivation for In0.53Ga0.47As surfaces on the Al/Al2O3/InGaAs MOS capacitors properties was investigated by comparing the characteristics of frequency dispersion and hysteresis, calculating the Dit and Δ Nbt values, and analyzing the interface traps and the leakage current. The results showed that both of the methods could form a passivation-layer on the InGaAs surface. The samples treated by N2 plasma could obtain good interface properties with the smallest frequency dispersion in the accumulation region, and the best hysteresis characteristics and good I-V properties were presented. Also the samples with (NH4)2Sx treatment showed the smallest frequency dispersion near the flat-band region and a minimum Dit value of 2.6 × 1011 cm-2 eV-1.

Key words: N2 plasma, (NH4)2Sx treatment, interface properties, MOS capacitors



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Fig. 1.  Schematic diagram of fabricated In0:53Ga0:47As MOS capacitor.

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Fig. 2.  (Color online) $C$--$V$ curves for without treatment, N$_{2}$ plasma treatment, and (NH$_{4})$$_{2}$S$_{x}$ treatment Al/Al$_{2}$O$_{3}$/In$_{0.53}$Ga$_{0.47}$As MOS capacitors at room temperature.

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Fig. 3.  $D_{\rm it}$ distribution for Al/Al$_{2}$O$_{3}$/In$_{0.53}$Ga$_{0.47}$As MOS capacitors without treatment, with N$_{2}$ plasma treatment, and with (NH$_{4})$$_{2}$S$_{x}$ treatment.

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Fig. 4.  Hysteresis curves of the capacitors without treatment, with N$_{2}$ plasma treatment, and with (NH$_{4})$$_{2}$S$_{x}$ treatment at room temperature.

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Fig. 5.  The border trap density distribution for the capacitors without treatment, with N$_{2}$ plasma treatment, and with (NH$_{4})$$_{2}$S$_{x}$ treatment.

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Fig. 6.  Gate leakage current density ($J_{\rm g})$ versus bias voltage for the capacitors without treatment, with N$_{2}$ plasma treatment, and with (NH$_{4})$$_{2}$S$_{x}$ treatment.

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Fig. 7.  Cross-sectional TEM image of Al/Al$_{2}$O$_{3}$/In$_{0.53}$Ga$_{0.47}$As capacitors. (a) Without treatment. (b) N$_{2}$ plasma treatment. (c) (NH$_{4})$$_{2}$S$_{x}$ treatment.

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    Received: 19 June 2015 Revised: Online: Published: 01 February 2016

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      Article Navigation >  Journal of Semiconductors  > 2016  >  37(2): 026002
      Zizeng Lin, Mingmin Cao, Shengkai Wang, Qi Li, Gongli Xiao, Xi Gao, Honggang Liu, Haiou Li. The effect of nitridation and sulfur passivation for In0.53Ga0.47As surfaces on their Al/Al2O3/InGaAs MOS capacitors properties[J]. Journal of Semiconductors, 2016, 37(2): 026002. doi: 10.1088/1674-4926/37/2/026002 ****Z Z Lin, M M Cao, S K Wang, Q Li, G L Xiao, X Gao, H G Liu, H O Li. The effect of nitridation and sulfur passivation for In0.53Ga0.47As surfaces on their Al/Al2O3/InGaAs MOS capacitors properties[J]. J. Semicond., 2016, 37(2): 026002. doi: 10.1088/1674-4926/37/2/026002.
      Citation:
      Zizeng Lin, Mingmin Cao, Shengkai Wang, Qi Li, Gongli Xiao, Xi Gao, Honggang Liu, Haiou Li. The effect of nitridation and sulfur passivation for In0.53Ga0.47As surfaces on their Al/Al2O3/InGaAs MOS capacitors properties[J]. Journal of Semiconductors, 2016, 37(2): 026002. doi: 10.1088/1674-4926/37/2/026002 ****
      Z Z Lin, M M Cao, S K Wang, Q Li, G L Xiao, X Gao, H G Liu, H O Li. The effect of nitridation and sulfur passivation for In0.53Ga0.47As surfaces on their Al/Al2O3/InGaAs MOS capacitors properties[J]. J. Semicond., 2016, 37(2): 026002. doi: 10.1088/1674-4926/37/2/026002.
      shu

      The effect of nitridation and sulfur passivation for In0.53Ga0.47As surfaces on their Al/Al2O3/InGaAs MOS capacitors properties

      DOI: 10.1088/1674-4926/37/2/026002
      • 1.

        Guangxi Experiment Center of Information Science, Guilin University of Electronic Technology, Guilin 541004, China

      • 2.

        Microwave Device and IC Department, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

      Funds:

      Project supported by the National Natural Science Foundation of China (Nos. 61274077, 61474031, 61464003), the Guangxi Natural Science Foundation (Nos. 2013GXNSFGA019003, 2013GXNSFAA019335), the Project (No. 9140C140101140C14069), the Innovation Project of GUET Graduate Education (No. YJCXS201529), and the National Science & Technology Major Project of China (No. 2011ZX02708-003).

      More Information
      • Corresponding author: seagull_1228@163.com
      • Received Date: 2015-06-19
      • Accepted Date: 2015-09-08
      • Published Date: 2016-01-25

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