J. Semicond. > 2016, Volume 37 > Issue 4 > 044004
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SEMICONDUCTOR DEVICES

A physical model of hole mobility for germanium-on-insulator pMOSFETs

Wenyu Yuan, Jingping Xu, Lu Liu, Yong Huang and Zhixiang Cheng

+ Author Affiliations

 Corresponding author: Jingping Xu, Email:jpxu@hust.edu.cn

DOI: 10.1088/1674-4926/37/4/044004

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Abstract: A physical model of hole mobility for germanium-on-insulator pMOSFETs is built by analyzing all kinds of scattering mechanisms, and a good agreement of the simulated results with the experimental data is achieved, confirming the validity of this model. The scattering mechanisms involved in this model include acoustic phonon scattering, ionized impurity scattering, surface roughness scattering, coulomb scattering and the scattering caused by Ge film thickness fluctuation. The simulated results show that the coulomb scattering from the interface charges is responsible for the hole mobility degradation in the low-field regime and the surface roughness scattering limits the hole mobility in the high-field regime. In addition, the effects of some factors, e.g. temperature, doping concentration of the channel and the thickness of Ge film, on degradation of the mobility are also discussed using the model, thus obtaining a reasonable range of the relevant parameters.

Key words: GeOI, pMOSFETs, hole mobility, scattering mechanisms



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Fig. 1.  The schematic diagram of a GeOI pMOSFET structure.

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Fig. 2.  Schematic model for the roughness of the high-$k$ dielectric/Ge interface,in which the dashed line represents the average position of the interface.

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Fig. 3.  Comparison between the simulated hole mobilities and the experimental data for GeOI pMOSFETs.

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Fig. 4.  Hole mobility versus the effective electric field under different doping concentrations of the channel.

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Fig. 5.  Hole mobility versus the effective electric field for various surface roughness.

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Fig. 6.  Hole mobility versus the effective electric field under different temperatures.

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Fig. 7.  Hole mobility versus the effective electric field under different interface charge areal densities.

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Fig. 8.  Hole mobility versus the effective electric field for different thicknesses of Ge film.

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Fig. 9.  Hole mobility versus thickness of Ge film for different inversion charge densities under the weak fields.

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Table 1.   A part of the physical parameters used in simulation.

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    Received: 30 July 2015 Revised: Online: Published: 01 April 2016

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      Article Navigation >  Journal of Semiconductors  > 2016  >  37(4): 044004
      Wenyu Yuan, Jingping Xu, Lu Liu, Yong Huang, Zhixiang Cheng. A physical model of hole mobility for germanium-on-insulator pMOSFETs[J]. Journal of Semiconductors, 2016, 37(4): 044004. doi: 10.1088/1674-4926/37/4/044004 ****W Y Yuan, J P Xu, L Liu, Y Huang, Z X Cheng. A physical model of hole mobility for germanium-on-insulator pMOSFETs[J]. J. Semicond., 2016, 37(4): 044004. doi: 10.1088/1674-4926/37/4/044004.
      Citation:
      Wenyu Yuan, Jingping Xu, Lu Liu, Yong Huang, Zhixiang Cheng. A physical model of hole mobility for germanium-on-insulator pMOSFETs[J]. Journal of Semiconductors, 2016, 37(4): 044004. doi: 10.1088/1674-4926/37/4/044004 ****
      W Y Yuan, J P Xu, L Liu, Y Huang, Z X Cheng. A physical model of hole mobility for germanium-on-insulator pMOSFETs[J]. J. Semicond., 2016, 37(4): 044004. doi: 10.1088/1674-4926/37/4/044004.
      shu

      A physical model of hole mobility for germanium-on-insulator pMOSFETs

      DOI: 10.1088/1674-4926/37/4/044004

      • School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China

      Funds:

      Project supported by the National Natural Science Foundation of China (Nos. 61274112, 61176100, 61404055).

      More Information
      • Corresponding author: Email:jpxu@hust.edu.cn
      • Received Date: 2015-07-30
      • Accepted Date: 2015-10-14
      • Published Date: 2016-01-25

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