Fig. 1.
Peak wavelength versus junction temperature for an Al-GaInP red LED.
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| Citation: |
Jing Wen, Yumei Wen, Ping Li, Sanshan Wang. Junction-temperature estimation in AlGaInP light-emitting diodes using the luminescence spectra method[J]. Journal of Semiconductors, 2016, 37(6): 064010. doi: 10.1088/1674-4926/37/6/064010
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J Wen, Y M Wen, P Li, S S Wang. Junction-temperature estimation in AlGaInP light-emitting diodes using the luminescence spectra method[J]. J. Semicond., 2016, 37(6): 064010. doi: 10.1088/1674-4926/37/6/064010.
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Junction-temperature estimation in AlGaInP light-emitting diodes using the luminescence spectra method
DOI: 10.1088/1674-4926/37/6/064010
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Abstract
This study proposes a practical method to estimate the junction temperature of AlGaInP LEDs using the luminescence spectra method. The peak wavelength shift of LEDs is due to the energy band gap shrinking. The temperature dependence of the bandgap of AlGaInP LEDs is derived from those of the underlying binary compounds AlP, GaP, and InP. Based on this, a theoretical model for the dependence of the peak wavelength on junction temperature is developed. Experimental results on the junction temperature of AlGaInP red light-emitting diodes are presented. Excellent agreement between the theoretical and experimental temperature dependence of the peak wavelength is found.-
Keywords:
- light emitting diode,
- junction temperature,
- luminescence,
- bandgap
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References
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