J. Semicond. > 2016, Volume 37 > Issue 6 > 064016
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SEMICONDUCTOR DEVICES

Total dose responses and reliability issues of 65 nm NMOSFETs

Dezhao Yu1, 2, 3, Qiwen Zheng1, 2, , Jiangwei Cui1, 2, Hang Zhou1, 2, 3, Xuefeng Yu1, 2 and Qi Guo1, 2

+ Author Affiliations

 Corresponding author: Qiwen Zheng, Email: qwzheng@ms.xjb.ac.cn

DOI: 10.1088/1674-4926/37/6/064016

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Abstract: In this paper, total dose responses and reliability issues of MOSFETs fabricated by 65 nm CMOS technology were examined. "Radiation-induced narrow channel effect" is observed in a narrow channel device. Similar to total dose responses of NMOSFETs, narrow channel NMOSFEs have larger hot-carrier-induced degradation than wide channel devices. Step Time-Dependent Dielectric Breakdown (TDDB) stresses are applied, and narrow channel devices have higher breakdown voltage than wide channel devices, which agree with "weakest link" theory of TDDB. Experimental results show that linear current, transconductance, saturated drain current and subthreshold swing are superposed degenerated by total dose irradiation and reliability issues, which may result in different lifetime from that considering total dose irradiation reliability issues separately.

Key words: total dose responses, reliability, lifetime



[1]
Zhao Di, Luo Qian, Wang Xiangzhan, et al. Performance enhancement of c-CESL-strained 95-nm-gate NMOSFET using trench-based structure. Journal of Semiconductors, 2015, 36(1):014010
[2]
Ren Shangqing, Yang Hong, Tang Bo, et al. Characterization of positive bias temperature instability of NMOSFET with high-k/metal gate last process. Journal of Semiconductors, 2015, 36(1):014007
[3]
Colinge J P. Hot-electron effects in silicon-on-insulator n-channel MOSFET's. IEEE Trans Electron Devices, 1987, ED-34:2173
[4]
Wu E, Nowak E, Vayshenker A, et al. CMOS scaling beyond the 100 nm node with silicon-dioxide-based gate dielectrics. IBM J Res Develop, 2002, (46):287
[5]
Yashchin E, Li Baozhen, Stathis J, et al. Min-log approach to modeling dielectric breakdown data. IEEE International Reliability Physics Symposium (IRPS), 2012:GD.4.1
[6]
Ma Xiaohua, Hao Yue, Chen Haifeng, et al. The breakdown characteristics of ultra-thin gate oxide n-MOSFET under voltage stress. Acta Phys Sin, 2006, 55(11):6118
[7]
Cui Jiangwei. Research on radiation and reliability effects of ultra deep sub-micro CMOS device for space application. Urumqi:Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, 2012:49
[8]
Shaneyfelt M R, Dodd P E, Draper B L, et al. Challenges in hardening technologies using shallow-trench isolation. IEEE Trans Nucl Sci, 199845(6):2584
[9]
Faccio F, Cervelli G. Radiation induced edge effects in deep submicron CMOS transistors. IEEE Trans Nucl Sci, 2005, 52:2413
[10]
Shaneyfelt M R, Schwank J R, Fleetwood D M, et al. Interfacetrap buildup rates in wet and dry oxides. IEEE Trans Nucl Sci, 1992, 39(6):2244
[11]
Lai S K. Two carrier nature of interface state generation in hole trapping and radiation damage. Appl Phys Lett, 1981, 38:58
[12]
Cui Jiangwei, Yu Xuefeng, Ren Diyuan, et al. The influence of channel size on total dose irradiation and hot carrier effects of sub-micro NMOSFET. Acta Phys Sin, 2012, 61(2):026102
[13]
Schwank J R, Shaneyfelt M R, Fleetwood D M, et al. Radiation effects in MOS oxides. IEEE Trans Nucl Sci, 2008, 55(4):1833
[14]
Silvestri M, Gerardin S, Paccagnella A, et al. Channel hot carrier stress on irradiated 130-nm NMOSFETs. IEEE Trans Nucl Sci, 2008, 56(4):1960
[15]
Silvestri M, Gerardin S, Schrimpf R D, et al. The role of irradiation bias on the time dependent dielectric breakdown of 130-nm MOSFETs exposed to X-rays. IEEE Trans Nucl Sci, 2009, 56(6):3244
Fig. 1.  (Color online) Structure of NMOSFETs used in this work.

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Fig. 2.  (Color online) Transfer curve at VDS = 0:1 V before and after 1 Mrad irradiation.

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Fig. 3.  (Color online) Transfer curve at VDS = 1:15 V before and after 1 Mrad irradiation.

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Fig. 4.  (Color online) Transfer curve at VDS = 0:1 V before and after 500 krad irradiation, this device is manufactured by 0.18 µ m CMOS processŒ[7].

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Fig. 5.  (Color online) Transfer curve at VDS = 0:1 V before and after 1 Mrad irradiation.

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Fig. 6.  (Color online) Transfer curve at VDS = 1:15 V before and after 1 Mrad irradiation.

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Fig. 7.  (Color online) Transconductance curve at VDS = 0:1 V before and after 1 Mrad irradiation.

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Fig. 8.  (Color online) Output characteristic at VGS = 1:2 V before and after 1 Mrad irradiation.

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Fig. 9.  (Color online) Transconductance and transfer curve at VDS = 0:1 V before and after stress.

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Fig. 10.  (Color online) Output characteristic at VGS = 1:2 V before and after stress.

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Fig. 11.  The percentage variation of IDlin with CHC stress time for wide and narrow channel devices.

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Fig. 12.  The percentage variation of Gm with CHC stress time for wide and narrow channel devices.

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Fig. 13.  The schematic diagram of V-ramp stress in the gate.

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Fig. 14.  The gate leakage changes with stress voltage and time for wide channel device.

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Fig. 15.  The gate leakage changes with stress voltage and time for narrow channel device.

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Fig. 18.  (Color online) Transfer curve at VDS = 0:1 V of NMOSFET(W/L = 10 µm/0.06 µm) before and after CHC stress.

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Fig. 19.  (Color online) Transfer curve at VDS = 0:1 V of NMOSFET (W/L = 0:12 µm/0.085 µm) before and after stress.

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Fig. 20.  (Color online) The percentage variation of IDlin with CHC stress time for irradiated and un-irradiated devices.

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Table 1.   Experimental details of total dose irradiation and reliability issues.

Experiments Bias Devices (W/L, type)
TID VG=1.32 V, all other pins grounded 10 µm/0.06 µm 0.31 µm/0.07 µm
HCI VD=2 V, VG= 1 V, all other pins grounded 10 µm/0.06 µm 0.3 µm/0.06 µm 0.12 µm /0.085 µm
TDDB Step Stress in Gate, start with 2.5 V, each step lasts 100 s and then increased by 0.05 V 10 µm/0.3 µm 0.3 µm/0.3 µm
DownLoad: CSV
[1]
Zhao Di, Luo Qian, Wang Xiangzhan, et al. Performance enhancement of c-CESL-strained 95-nm-gate NMOSFET using trench-based structure. Journal of Semiconductors, 2015, 36(1):014010
[2]
Ren Shangqing, Yang Hong, Tang Bo, et al. Characterization of positive bias temperature instability of NMOSFET with high-k/metal gate last process. Journal of Semiconductors, 2015, 36(1):014007
[3]
Colinge J P. Hot-electron effects in silicon-on-insulator n-channel MOSFET's. IEEE Trans Electron Devices, 1987, ED-34:2173
[4]
Wu E, Nowak E, Vayshenker A, et al. CMOS scaling beyond the 100 nm node with silicon-dioxide-based gate dielectrics. IBM J Res Develop, 2002, (46):287
[5]
Yashchin E, Li Baozhen, Stathis J, et al. Min-log approach to modeling dielectric breakdown data. IEEE International Reliability Physics Symposium (IRPS), 2012:GD.4.1
[6]
Ma Xiaohua, Hao Yue, Chen Haifeng, et al. The breakdown characteristics of ultra-thin gate oxide n-MOSFET under voltage stress. Acta Phys Sin, 2006, 55(11):6118
[7]
Cui Jiangwei. Research on radiation and reliability effects of ultra deep sub-micro CMOS device for space application. Urumqi:Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, 2012:49
[8]
Shaneyfelt M R, Dodd P E, Draper B L, et al. Challenges in hardening technologies using shallow-trench isolation. IEEE Trans Nucl Sci, 199845(6):2584
[9]
Faccio F, Cervelli G. Radiation induced edge effects in deep submicron CMOS transistors. IEEE Trans Nucl Sci, 2005, 52:2413
[10]
Shaneyfelt M R, Schwank J R, Fleetwood D M, et al. Interfacetrap buildup rates in wet and dry oxides. IEEE Trans Nucl Sci, 1992, 39(6):2244
[11]
Lai S K. Two carrier nature of interface state generation in hole trapping and radiation damage. Appl Phys Lett, 1981, 38:58
[12]
Cui Jiangwei, Yu Xuefeng, Ren Diyuan, et al. The influence of channel size on total dose irradiation and hot carrier effects of sub-micro NMOSFET. Acta Phys Sin, 2012, 61(2):026102
[13]
Schwank J R, Shaneyfelt M R, Fleetwood D M, et al. Radiation effects in MOS oxides. IEEE Trans Nucl Sci, 2008, 55(4):1833
[14]
Silvestri M, Gerardin S, Paccagnella A, et al. Channel hot carrier stress on irradiated 130-nm NMOSFETs. IEEE Trans Nucl Sci, 2008, 56(4):1960
[15]
Silvestri M, Gerardin S, Schrimpf R D, et al. The role of irradiation bias on the time dependent dielectric breakdown of 130-nm MOSFETs exposed to X-rays. IEEE Trans Nucl Sci, 2009, 56(6):3244

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    Received: 04 December 2015 Revised: 23 December 2015 Online: Published: 01 June 2016

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      Article Navigation >  Journal of Semiconductors  > 2016  >  37(6): 064016
      Dezhao Yu, Qiwen Zheng, Jiangwei Cui, Hang Zhou, Xuefeng Yu, Qi Guo. Total dose responses and reliability issues of 65 nm NMOSFETs[J]. Journal of Semiconductors, 2016, 37(6): 064016. doi: 10.1088/1674-4926/37/6/064016 ****D Z Yu, Q W Zheng, J W Cui, H Zhou, X F Yu, Q Guo. Total dose responses and reliability issues of 65 nm NMOSFETs[J]. J. Semicond., 2016, 37(6): 064016. doi: 10.1088/1674-4926/37/6/064016.
      Citation:
      Dezhao Yu, Qiwen Zheng, Jiangwei Cui, Hang Zhou, Xuefeng Yu, Qi Guo. Total dose responses and reliability issues of 65 nm NMOSFETs[J]. Journal of Semiconductors, 2016, 37(6): 064016. doi: 10.1088/1674-4926/37/6/064016 ****
      D Z Yu, Q W Zheng, J W Cui, H Zhou, X F Yu, Q Guo. Total dose responses and reliability issues of 65 nm NMOSFETs[J]. J. Semicond., 2016, 37(6): 064016. doi: 10.1088/1674-4926/37/6/064016.
      shu

      Total dose responses and reliability issues of 65 nm NMOSFETs

      DOI: 10.1088/1674-4926/37/6/064016
      • 1.

        Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China

      • 2.

        Xinjiang Key Laboratory of Electronic Information Material and Device, Urumqi 830011, China

      • 3.

        University of Chinese Academy of Sciences, Beijing 100049, China

      Funds:

      “Light of West China” Program of CAS (No. XBBS201219)

      “Light of West China” Program of CAS No. XBBS201219

      More Information
      • Corresponding author: Email: qwzheng@ms.xjb.ac.cn
      • Received Date: 2015-12-04
      • Revised Date: 2015-12-23
      • Published Date: 2016-06-01

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