Fig. 1.
(Color online) Schematic of the Ge/Si tunneling avalanche photodiode (TAPD).
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| Citation: |
Wenzhou Wu, Buwen Cheng, Jun Zheng, Zhi Liu, Chuanbo Li, Yuhua Zuo, Chunlai Xue. High gain-bandwidth product Ge/Si tunneling avalanche photodiode with high-frequency tunneling effect[J]. Journal of Semiconductors, 2017, 38(11): 114003. doi: 10.1088/1674-4926/38/11/114003
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W Z Wu, B W Cheng, J Zheng, Z Liu, C B Li, Y H Zuo, C L Xue. High gain-bandwidth product Ge/Si tunneling avalanche photodiode with high-frequency tunneling effect[J]. J. Semicond., 2017, 38(11): 114003. doi: 10.1088/1674-4926/38/11/114003.
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High gain-bandwidth product Ge/Si tunneling avalanche photodiode with high-frequency tunneling effect
DOI: 10.1088/1674-4926/38/11/114003
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Abstract
This study presents a theoretical investigation of a novel Ge/Si tunneling avalanche photodiode (TAPD) with an ultra-thin barrier layer between the absorption and p+ contact layer. A high-frequency tunneling effect is introduced into the structure of the barrier layer to increase the high-frequency response when frequency is larger than 0.1 GHz, and the −3 dB bandwidth of the device increases evidently. The results demonstrate that the avalanche gain and −3 dB bandwidth of the TAPD can be influenced by the thickness and bandgap of the barrier layer. When the barrier thickness is 2 nm and the bandgap is 4.5 eV, the avalanche gain loss is negligible and the gain-bandwidth product of the TAPD is 286 GHz, which is 18% higher than that of an avalanche photodiode without a barrier layer. The total noise in the TAPD was an order of magnitude smaller than that in APD without barrier layer. -
References
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