Citation: 
Caixia Guo, Congxin Xia, Tianxing Wang, Yufang Liu. Carbondopinginduced negative differential resistance in armchair phosphorene nanoribbons[J]. Journal of Semiconductors, 2017, 38(3): 033005. doi: 10.1088/16744926/38/3/033005
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C X Guo, C X Xia, T X Wang, Y F Liu. Carbondopinginduced negative differential resistance in armchair phosphorene nanoribbons[J]. J. Semicond., 2017, 38(3): 033005. doi: 10.1088/16744926/38/3/033005.

Carbondopinginduced negative differential resistance in armchair phosphorene nanoribbons
doi: 10.1088/16744926/38/3/033005
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Abstract
By using a combined method of density functional theory and nonequilibrium Green's function formalism, we investigate the electronic transport properties of carbondoped armchair phosphorene nanoribbons (APNRs). The results show that C atom doping can strongly affect the electronic transport properties of the APNR and change it from semiconductor to metal. Meanwhile, obvious negative differential resistance (NDR) behaviors are obtained by tuning the doping position and concentration. In particular, with reducing doping concentration, NDR peak position can enter into mV bias range. These results provide a theoretical support to design the related nanodevice by tuning the doping position and concentration in the APNRs. 
References
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