Fig. 1.
(Color online) (a) Lattice structure of black phosphorus. (b)--(d) the Raman modes of Ag2, Ag1 and B2g.
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| Citation: |
Jiawei Wan, Junhong Guo, Fangren Hu. Identification of strained black phosphorous by Raman spectroscopy[J]. Journal of Semiconductors, 2017, 38(4): 042003. doi: 10.1088/1674-4926/38/4/042003
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J W Wan, J H Guo, F R Hu. Identification of strained black phosphorous by Raman spectroscopy[J]. J. Semicond., 2017, 38(4): 042003. doi: 10.1088/1674-4926/38/4/042003.
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Identification of strained black phosphorous by Raman spectroscopy
DOI: 10.1088/1674-4926/38/4/042003
More Information
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Abstract
Phosphorene has a very high hole mobility and can be a tuned band structure, and has become an ideal material for electronic devices. For this new type of two-dimensional material, in the applied strain, black phosphorus (BP) can be changed into an indirect band gap and metallic materials from the direct band gap semiconductor material, which greatly affect its inherent physical characteristics. How to identify strained microstructure changes becomes an important problem. The calculated Raman spectra disclose that the Ag2 mode and B2g mode will split and the Raman spectra appear, while the Ag1 mode is shifted to low-frequency region. The deformation induced by strain will effectively change the Raman mode position and intensity, this can be used to identify phosphorus changes.-
Keywords:
- black phosphorus,
- strain,
- Raman scattering,
- DFT
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References
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