Fig. 1.
Chip photograph of the dynamic frequency divider.
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| Citation: |
Xi Wang, Bichan Zhang, Hua Zhao, Yongbo Su, Asif Muhammad, Dong Guo, Zhi Jin. A 75 GHz regenerative dynamic frequency divider with active transformer using InGaAs/InP HBT technology[J]. Journal of Semiconductors, 2017, 38(8): 085001. doi: 10.1088/1674-4926/38/8/085001
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X Wang, B C Zhang, H Zhao, Y B Su, A Muhammad, D Guo, Z Jin. A 75 GHz regenerative dynamic frequency divider with active transformer using InGaAs/InP HBT technology[J]. J. Semicond., 2017, 38(8): 085001. doi: 10.1088/1674-4926/38/8/085001.
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A 75 GHz regenerative dynamic frequency divider with active transformer using InGaAs/InP HBT technology
DOI: 10.1088/1674-4926/38/8/085001
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Abstract
This letter presents a high speed 2:1 regenerative dynamic frequency divider with an active transformer fabricated in 0.7 μm InP DHBT technology with fT of 165 GHz and fmax of 230 GHz. The circuit includes a two-stage active transformer, input buffer, divider core and output buffer. The core part of the frequency divider is composed of a double-balanced active mixer (widely known as the Gilbert cell) and a regenerative feedback loop. The active transformer with two stages can contribute to positive gain and greatly improve phase difference. Instead of the passive transformer, the active one occupies a much smaller chip area. The area of the chip is only 469×414 μm2 and it entirely consumes a total DC power of only 94.6 mW from a single -4.8 V DC supply. The measured results present that the divider achieves an operating frequency bandwidth from 75 to 80 GHz, and performs a -23 dBm maximum output power at 37.5 GHz with a 0 dBm input signal of 75 GHz. -
References
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