Fig. 1.
The solving steps of anisotropic thermal-stress of TSV.
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| Citation: |
Song Liu, Guangbao Shan. An anisotropic thermal-stress model for through-silicon via[J]. Journal of Semiconductors, 2018, 39(2): 026003. doi: 10.1088/1674-4926/39/2/026003
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S Liu, G B Shan. An anisotropic thermal-stress model for through-silicon via[J]. J. Semicond., 2018, 39(2): 026003. doi: 10.1088/1674-4926/39/2/026003.
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An anisotropic thermal-stress model for through-silicon via
DOI: 10.1088/1674-4926/39/2/026003
More Information
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Abstract
A two-dimensional thermal-stress model of through-silicon via (TSV) is proposed considering the anisotropic elastic property of the silicon substrate. By using the complex variable approach, the distribution of thermal-stress in the substrate can be characterized more accurately. TCAD 3-D simulations are used to verify the model accuracy and well agree with analytical results (< ±5%). The proposed thermal-stress model can be integrated into stress-driven design flow for 3-D IC , leading to the more accurate timing analysis considering the thermal-stress effect.-
Keywords:
- 3-D IC,
- through-silicon via,
- thermal-stress,
- TCAD simulation
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References
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