Fig. 1.
(Color online) Distribution of concentration for the implanted dopant (curve 1), interstitials (curve 2) and vacancies (curve 3). Solid lines are analytical results, and dashed lines are results from cluster dynamics model.
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E. L. Pankratov. On correction of model of stabilization of distribution of concentration of radiation defects in a multilayer structure with account experiment data[J]. Journal of Semiconductors, 2018, 39(5): 053001. doi: 10.1088/1674-4926/39/5/053001
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E. L. Pankratov. On correction of model of stabilization of distribution of concentration of radiation defects in a multilayer structure with account experiment data[J]. J. Semicond., 2018, 39(5): 053001. doi: 10.1088/1674-4926/39/5/053001.
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On correction of model of stabilization of distribution of concentration of radiation defects in a multilayer structure with account experiment data
DOI: 10.1088/1674-4926/39/5/053001
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Abstract
We introduce a model of redistribution of point radiation defects, their interaction between themselves and redistribution of their simplest complexes (divacancies and diinterstitials) in a multilayer structure. The model gives a possibility to describe qualitatively nonmonotonicity of distributions of concentrations of radiation defects on interfaces between layers of the multilayer structure. The nonmonotonicity was recently found experimentally. To take into account the nonmonotonicity we modify recently used in literature model for analysis of distribution of concentration of radiation defects. To analyze the model we used an approach of solution of boundary problems, which could be used without crosslinking of solutions on interfaces between layers of the considered multilayer structures. -
References
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