Fig. 1.
The SEM image of all the samples. The growth parameters of each sample are shown in Table 1.
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| Citation: |
Bang Li, Xin Yan, Xia Zhang, Xiaomin Ren. Growth and characteristics of p-type doped GaAs nanowire[J]. Journal of Semiconductors, 2018, 39(5): 053004. doi: 10.1088/1674-4926/39/5/053004
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B Li, X Yan, X Zhang, X M Ren. Growth and characteristics of p-type doped GaAs nanowire[J]. J. Semicond., 2018, 39(5): 053004. doi: 10.1088/1674-4926/39/5/053004.
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Growth and characteristics of p-type doped GaAs nanowire
DOI: 10.1088/1674-4926/39/5/053004
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Abstract
The growth of p-type GaAs nanowires (NWs) on GaAs (111) B substrates by metal-organic chemical vapor deposition (MOCVD) has been systematically investigated as a function of diethyl zinc (DEZn) flow. The growth rate of GaAs NWs was slightly improved by Zn-doping and kink is observed under high DEZn flow. In addition, the I–V curves of GaAs NWs has been measured and the p-type dope concentration under the II/III ratio of 0.013 and 0.038 approximated to 1019–1020 cm−3. -
References
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