Fig. 1.
(Color online) Device structure of (a) InAs-based DG TFET and (b) DG TFET with gate–drain overlap. (c) Electron barrier tunneling for DG TFET and DG TFET with gate–drain overlap.
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S. Poorvasha, B. Lakshmi. Investigation and statistical modeling of InAs-based double gate tunnel FETs for RF performance enhancement[J]. Journal of Semiconductors, 2018, 39(5): 054001. doi: 10.1088/1674-4926/39/5/054001
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S. Poorvasha, B. Lakshmi. Investigation and statistical modeling of InAs-based double gate tunnel FETs for RF performance enhancement[J]. J. Semicond., 2018, 39(5): 054001. doi: 10.1088/1674-4926/39/5/054001.
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Investigation and statistical modeling of InAs-based double gate tunnel FETs for RF performance enhancement
DOI: 10.1088/1674-4926/39/5/054001
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Abstract
In this paper, RF performance analysis of InAs-based double gate (DG) tunnel field effect transistors (TFETs) is investigated in both qualitative and quantitative fashion. This investigation is carried out by varying the geometrical and doping parameters of TFETs to extract various RF parameters, unity gain cut-off frequency (ft), maximum oscillation frequency (fmax), intrinsic gain and admittance (Y) parameters. An asymmetric gate oxide is introduced in the gate-drain overlap and compared with that of DG TFETs. Higher ON-current (ION) of about 0.2 mA and less leakage current (IOFF) of 29 fA is achieved for DG TFET with gate-drain overlap. Due to increase in transconductance (gm), higher ft and intrinsic gain is attained for DG TFET with gate-drain overlap. Higher fmax of 985 GHz is obtained for drain doping of 5 × 1017 cm−3 because of the reduced gate-drain capacitance (Cgd) with DG TFET with gate-drain overlap. In terms of Y-parameters, gate oxide thickness variation offers better performance due to the reduced values of Cgd. A second order numerical polynomial model is generated for all the RF responses as a function of geometrical and doping parameters. The simulation results are compared with this numerical model where the predicted values match with the simulated values. -
References
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