J. Semicond. > 2018, Volume 39 > Issue 8 > 082001

SEMICONDUCTOR PHYSICS

Dynamic nuclear self-polarization of III–V semiconductors

M. Koizumi1, , J. Goto2 and S. Matsuki3

+ Author Affiliations

 Corresponding author: M. Koizumi, Email: koizumi.mitsuo@jaea.go.jp

DOI: 10.1088/1674-4926/39/8/082001

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Abstract: III–V semiconductors exhibit dynamic nuclear self-polarization (DYNASP) owing to the contact hyperfine interaction (HFI) between optically excited conduction electrons and lattice nuclei. In the self-polarization process at a low temperature, electron spin state and the nuclear polarization (magnetization) exchange a positive feedback, increasing energy splitting of the conduction electron states, thereby a large nuclear polarization. This phenomenon was theoretically predicted previously for conduction electrons excited linearly and elliptically polarized light. The polarization of the conduction electrons was represented by a parameterα in a formula for nuclear polarization (Eq. (9) in Ref. [1]); however, the effect of external magnetic fields on the nuclear polarization was not considered. Therefore, this study introduces this effect by further extending the previous studies. Herein, α′ represents the combination of the effects of elliptically polarized electrons and an external magnetic field, which is used in the equations presented in previous studies. When α′ = 0, a large nuclear polarization is obtained below critical temperature Tc, but no polarization occurs above Tc. When α′ > 0, the nuclear polarization is enhanced above Tc. Below Tc, the nuclear polarization follows a hysteresis curve when α′ is partially manipulated by adjusting the degree of the polarization of the exciting laser.

Key words: nuclear polarization, optical polarization, InP, overhauser, III–V semiconductor



[1]
Koizumi M, Goto J, Matsuki S. Dynamic nuclear self-polarization with circularly polarized light. J Appl Phys, 2011, 110: 013911 doi: 10.1063/1.3602118
[2]
Sealy B J. Review of III–V semiconductor materials and devices. J Institution of Electron Radio Eng, 1987, 57: S2 doi: 10.1049/jiere.1987.0012
[3]
Mokkapati S, Jagadish C. III–V compound SC for optoelectronic devices. Mater Today, 2009, 12: 22 doi: 10.1016/S1369-7021(09)70110-5
[4]
Tanabe K. A review of ultrahigh efficiency III–V semiconductor compound solar cells: multijunction tandem, lower dimensional, photonic up/down conversion and plasmonic nanometallic structures. Energies, 2009, 2: 504 doi: 10.3390/en20300504
[5]
Dasgupta N P, Sun J, Liu C, et al. Transparent electrodes: highly conductive PEDOT:PSS nanofibrils induced by solution‐processed crystallization. Adv Mater, 2014, 26: 2137 doi: 10.1002/adma.v26.14
[6]
Tamirat Y. The role of nanotechnology in semiconductor industry. J Mater Sci Nanotechnol, 2017, 5: 202
[7]
Liu Y, Liang B, Guo Q, et al. Electronic coupling in nanoscale InAs/GaAs quantum dot pairs separated by a thin Ga(Al)As spacer. Nanoscale Res Lett, 2015, 10: 271 doi: 10.1186/s11671-015-0973-5
[8]
Frolov S M, Plissard S R, Nadj-Perge S, et al. Quantum computing based on semiconductor nanowires. Mater Res Soc, 2013, 38: 809 doi: 10.1557/mrs.2013.205
[9]
Ohno H. Quantum computing based on semiconductor nanowires. J Magn Magn Mater, 1999, 200: 110 doi: 10.1016/S0304-8853(99)00444-8
[10]
Jungwirth T, Sinova J, Maček J, et al. Theory of ferromagnetic (III,Mn)V semiconductors. Rev Mod Phys, 2006, 78: 809 doi: 10.1103/RevModPhys.78.809
[11]
Chen Y, Kim J, Puls J, et al. Current‐induced control of the electron–nuclear spin system in semiconductors on a micrometer scale. Phys Status Solidi B, 2014, 251: 1777 doi: 10.1002/pssb.201350255
[12]
Dyakonov M I, Perel V I. Dynamic self-polarization of nuclei in solids. JETP Lett, 1972, 16: 398
[13]
Dyakonov M I. Optical recording of dynamic self-polarization of nuclei in semiconductors. Sov Phys JETP, 1975, 40: 746
[14]
Dyakonov M I, Perel V I. Optical orientation. Edited by F Meier, B. Zakharchenya. North-Holand, 1984: 11
[15]
Koizumi M, Goto J, Matsuki S, et al. Dynamic nuclear self-polarization for measurements of nuclear magnetic moments. Nucl Instr Meth Phys Res B, 2013, 317: 689 doi: 10.1016/j.nimb.2013.07.042
[16]
Overhauser A W. Polarization of nuclei in metals. Phys Rev, 1953, 92: 411 doi: 10.1103/PhysRev.92.411
[17]
Paget D, Lampel G, Sapoval B, et al. Low field electron-nuclear spin coupling in gallium arsenide under optical pumping conditions. Phys Rev B, 1977, 15: 5780 doi: 10.1103/PhysRevB.15.5780
[18]
Gotschy B, Denninger G, Obloh H, et al. Overhauser shift and dynamic nuclear polarization in InP. Solid State Commun, 1989, 71: 629 doi: 10.1016/0038-1098(89)90551-6
[19]
Clerjaud B, Gendron F, Obloh H, et al. Effect of nuclear polarization on the conduction-electron spin resonance in InP. Phys Rev B, 1989, 40: 2042
[20]
Raghavan P. Table of nuclear moments. Atomic Data and Nuclear Data Tables, 1989, 42: 189 doi: 10.1016/0092-640X(89)90008-9
[21]
Michal C A, Tycko R. Stray-field NMR imaging and wavelength dependence of optically pumped nuclear spin polarization in InP. Phys Rev B, 1999, 60: 8672 doi: 10.1103/PhysRevB.60.8672
[22]
Goto A, Hashi K, Shimizu T, et al. Efficiency of the optical pumping qubit initializer for solid-state NMR quantum computers. J Magn Magn Mater, 2004, 272-276: E1669 doi: 10.1016/j.jmmm.2003.12.958
[23]
Rikovska J, Giles T, Stone N J, et al. First on-line beta-NMR on oriented nuclei: magnetic dipole moments of the (νp1/2)−1 1/2− ground state in N67i and (πp3/2)+1 3/2− ground state in C69u. Phys Rev Lett, 2000, 85: 1392 doi: 10.1103/PhysRevLett.85.1392
[24]
Nagae D, Ueno H, Kameda D, et al. Ground-state electric quadrupole moment of Al31. Phys Rev C, 2009, 79: 027301 doi: 10.1103/PhysRevC.79.027301
Fig. 1.  Schematic band structure near the Γ-point of a III–V semiconductor. The abscissa is the wave vector k, and the ordinate is the excitation energy. The arrows indicate an excitation-relaxation-and-recombination process for an electron. The bands denoted by c, hh, lh, and sh are the conduction, heavy-hole, light-hole, and split-off bands, respectively, which have the corresponding angular momenta j = 0, 1, 0, and 0[14]. (right) The relative interband transition probabilities between the magnetic sub-states of the valence band ( $j=\frac{3}{2}$ ) and the conduction band ( $j=\frac{1}{2}$ ).

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Fig. 2.  Energy levels of electrons in the conduction band. The ordinate is the excitation energy, and the abscissa is the magnetic field. As the magnetic field B increases, the energy gap $\varepsilon$ between the magnetic sub-states $m_{j}=\pm\frac{1}{2}$ increases. The hyperfine structure is shown on the right, where $m_{\rm{F}}$ is the quantum number of the hyperfine magnetic sub-states. The dashed lines are transitions caused by the contact HFI. The nuclear spin $I=\frac{3}{2}$ is assumed.

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Fig. 3.  Temperature dependence of the nuclear polarization of 115In in a InP semiconductor. The numbers on the curves are the values of α′.

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Fig. 4.  The dependence of α′ on the nuclear polarization of 115In in a InP semiconductor. The arrows show the direction of the change in polarization of the hysteresis curves.

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[1]
Koizumi M, Goto J, Matsuki S. Dynamic nuclear self-polarization with circularly polarized light. J Appl Phys, 2011, 110: 013911 doi: 10.1063/1.3602118
[2]
Sealy B J. Review of III–V semiconductor materials and devices. J Institution of Electron Radio Eng, 1987, 57: S2 doi: 10.1049/jiere.1987.0012
[3]
Mokkapati S, Jagadish C. III–V compound SC for optoelectronic devices. Mater Today, 2009, 12: 22 doi: 10.1016/S1369-7021(09)70110-5
[4]
Tanabe K. A review of ultrahigh efficiency III–V semiconductor compound solar cells: multijunction tandem, lower dimensional, photonic up/down conversion and plasmonic nanometallic structures. Energies, 2009, 2: 504 doi: 10.3390/en20300504
[5]
Dasgupta N P, Sun J, Liu C, et al. Transparent electrodes: highly conductive PEDOT:PSS nanofibrils induced by solution‐processed crystallization. Adv Mater, 2014, 26: 2137 doi: 10.1002/adma.v26.14
[6]
Tamirat Y. The role of nanotechnology in semiconductor industry. J Mater Sci Nanotechnol, 2017, 5: 202
[7]
Liu Y, Liang B, Guo Q, et al. Electronic coupling in nanoscale InAs/GaAs quantum dot pairs separated by a thin Ga(Al)As spacer. Nanoscale Res Lett, 2015, 10: 271 doi: 10.1186/s11671-015-0973-5
[8]
Frolov S M, Plissard S R, Nadj-Perge S, et al. Quantum computing based on semiconductor nanowires. Mater Res Soc, 2013, 38: 809 doi: 10.1557/mrs.2013.205
[9]
Ohno H. Quantum computing based on semiconductor nanowires. J Magn Magn Mater, 1999, 200: 110 doi: 10.1016/S0304-8853(99)00444-8
[10]
Jungwirth T, Sinova J, Maček J, et al. Theory of ferromagnetic (III,Mn)V semiconductors. Rev Mod Phys, 2006, 78: 809 doi: 10.1103/RevModPhys.78.809
[11]
Chen Y, Kim J, Puls J, et al. Current‐induced control of the electron–nuclear spin system in semiconductors on a micrometer scale. Phys Status Solidi B, 2014, 251: 1777 doi: 10.1002/pssb.201350255
[12]
Dyakonov M I, Perel V I. Dynamic self-polarization of nuclei in solids. JETP Lett, 1972, 16: 398
[13]
Dyakonov M I. Optical recording of dynamic self-polarization of nuclei in semiconductors. Sov Phys JETP, 1975, 40: 746
[14]
Dyakonov M I, Perel V I. Optical orientation. Edited by F Meier, B. Zakharchenya. North-Holand, 1984: 11
[15]
Koizumi M, Goto J, Matsuki S, et al. Dynamic nuclear self-polarization for measurements of nuclear magnetic moments. Nucl Instr Meth Phys Res B, 2013, 317: 689 doi: 10.1016/j.nimb.2013.07.042
[16]
Overhauser A W. Polarization of nuclei in metals. Phys Rev, 1953, 92: 411 doi: 10.1103/PhysRev.92.411
[17]
Paget D, Lampel G, Sapoval B, et al. Low field electron-nuclear spin coupling in gallium arsenide under optical pumping conditions. Phys Rev B, 1977, 15: 5780 doi: 10.1103/PhysRevB.15.5780
[18]
Gotschy B, Denninger G, Obloh H, et al. Overhauser shift and dynamic nuclear polarization in InP. Solid State Commun, 1989, 71: 629 doi: 10.1016/0038-1098(89)90551-6
[19]
Clerjaud B, Gendron F, Obloh H, et al. Effect of nuclear polarization on the conduction-electron spin resonance in InP. Phys Rev B, 1989, 40: 2042
[20]
Raghavan P. Table of nuclear moments. Atomic Data and Nuclear Data Tables, 1989, 42: 189 doi: 10.1016/0092-640X(89)90008-9
[21]
Michal C A, Tycko R. Stray-field NMR imaging and wavelength dependence of optically pumped nuclear spin polarization in InP. Phys Rev B, 1999, 60: 8672 doi: 10.1103/PhysRevB.60.8672
[22]
Goto A, Hashi K, Shimizu T, et al. Efficiency of the optical pumping qubit initializer for solid-state NMR quantum computers. J Magn Magn Mater, 2004, 272-276: E1669 doi: 10.1016/j.jmmm.2003.12.958
[23]
Rikovska J, Giles T, Stone N J, et al. First on-line beta-NMR on oriented nuclei: magnetic dipole moments of the (νp1/2)−1 1/2− ground state in N67i and (πp3/2)+1 3/2− ground state in C69u. Phys Rev Lett, 2000, 85: 1392 doi: 10.1103/PhysRevLett.85.1392
[24]
Nagae D, Ueno H, Kameda D, et al. Ground-state electric quadrupole moment of Al31. Phys Rev C, 2009, 79: 027301 doi: 10.1103/PhysRevC.79.027301

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    Received: 21 December 2017 Revised: 11 April 2018 Online: Accepted Manuscript: 26 April 2018Uncorrected proof: 03 May 2018Published: 09 August 2018

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      Article Navigation >  Journal of Semiconductors  > 2018  >  39(8): 082001
      M. Koizumi, J. Goto, S. Matsuki. Dynamic nuclear self-polarization of III–V semiconductors[J]. Journal of Semiconductors, 2018, 39(8): 082001. doi: 10.1088/1674-4926/39/8/082001 ****M. Koizumi, J. Goto, S. Matsuki, Dynamic nuclear self-polarization of III–V semiconductors[J]. J. Semicond., 2018, 39(8): 082001. doi: 10.1088/1674-4926/39/8/082001.
      Citation:
      M. Koizumi, J. Goto, S. Matsuki. Dynamic nuclear self-polarization of III–V semiconductors[J]. Journal of Semiconductors, 2018, 39(8): 082001. doi: 10.1088/1674-4926/39/8/082001 ****
      M. Koizumi, J. Goto, S. Matsuki, Dynamic nuclear self-polarization of III–V semiconductors[J]. J. Semicond., 2018, 39(8): 082001. doi: 10.1088/1674-4926/39/8/082001.
      shu

      Dynamic nuclear self-polarization of III–V semiconductors

      DOI: 10.1088/1674-4926/39/8/082001
      • 1.

        Nuclear Science and Engineering Center (concurrently: Integrated Support Center for Nuclear Nonproliferation and Nuclear Security), Japan Atomic Energy Agency, Shirakata 2-4, Toukai-mura, Naka, Ibaraki 319-1195, Japan

      • 2.

        Institute for Research Promotion, Niigata University, Asahimachi-dori 1-757, Niigata, Niigata 951-8510, Japan

      • 3.

        Research Center for Nuclear Physics (RCNP), Osaka University, 10-1 Mihogaoka, Ibaraki, Osaka, 567-0047, Japan

      Funds:

      Project supported by the Grant-in-Aid for Scientific Research (C) of Japan Society for the Promotion of Science (JSPS) (Nos. 21540307, 26400298).

      More Information
      • Corresponding author: Email: koizumi.mitsuo@jaea.go.jp
      • Received Date: 2017-12-21
      • Revised Date: 2018-04-11
      • Published Date: 2018-08-01

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