Fig. 1.
(Color online) Schematic of the band alignment for T2SLs InAs / GaSb, where CBO is conduction band offset.
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| Citation: |
Tetiana Manyk, Klaudia Hackiewicz, Jaroslaw Rutkowski, Piotr Martyniuk. Theoretical simulation of T2SLs InAs/GaSb cascade photodetector for HOT condition[J]. Journal of Semiconductors, 2018, 39(9): 094004. doi: 10.1088/1674-4926/39/9/094004
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T Manyk, K Hackiewicz, J Rutkowski, P Martyniuk, Theoretical simulation of T2SLs InAs/GaSb cascade photodetector for HOT condition[J]. J. Semicond., 2018, 39(9): 094004. doi: 10.1088/1674-4926/39/9/094004.
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Theoretical simulation of T2SLs InAs/GaSb cascade photodetector for HOT condition
DOI: 10.1088/1674-4926/39/9/094004
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Abstract
The investigation of the interband type-II superlattice InAs/GaSb cascade photodetector in the temperature range of 320–380 K is presented. The article is devoted to the theoretical modeling of the cascade detector characteristics by the use of the SimuApsys platform and the 4-band model (k∙p 8 × 8 method). The obtained theoretical characteristics are comparable with experimentally measured ones, suggesting that transport in the absorber is determined by the dynamics of intrinsic carriers and by their lifetime. An overlap equal to 120 meV was used in calculations and a correction term in the " non-common atom” model Hxy = 700 meV was added to the Hamiltonian. The electron and hole effective masses from dispersion curves were estimated and absorption coefficient α was calculated. Based on the simulation detectivity, D* characteristics in the temperature range 320–380 K were calculated. The simulated theoretical characteristics at 320 K are comparable to experimentally measured ones, however at higher temperatures, the experimental value of D* does not reach the theoretical values due to the low resistance of the device and short diffusion length. -
References
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