J. Semicond. > 2019, Volume 40 > Issue 6 > 061001
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Optical and electrical properties of two-dimensional anisotropic materials

Ziqi Zhou1, 2, Yu Cui1, 2, Ping-Heng Tan1, 2, Xuelu Liu1, 2, and Zhongming Wei1, 2,

+ Author Affiliations

 Corresponding author: Xuelu Liu, Email: liuxuelu@semi.ac.cn and zmwei@semi.ac.cn; Zhongming Wei, Email: liuxuelu@semi.ac.cn and zmwei@semi.ac.cn

DOI: 10.1088/1674-4926/40/6/061001

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Abstract: Two-dimensional (2D) anisotropic materials, such as B-P, B-As, GeSe, GeAs, ReSe2, KP15 and their hybrid systems, exhibit unique crystal structures and extraordinary anisotropy. This review presents a comprehensive comparison of various 2D anisotropic crystals as well as relevant FETs and photodetectors, especially on their particular anisotropy in optical and electrical properties. First, the structure of typical 2D anisotropic crystal as well as the analysis of structural anisotropy is provided. Then, recent researches on anisotropic Raman spectra are reviewed. Particularly, a brief measurement principle of Raman spectra under three typical polarized measurement configurations is introduced. Finally, recent progress on the electrical and photoelectrical properties of FETs and polarization-sensitive photodetectors based on 2D anisotropic materials is summarized for the comparison between different 2D anisotropic materials. Beyond the high response speed, sensitivity and on/off ratio, these 2D anisotropic crystals exhibit highly conduction ratio and dichroic ratio which can be applied in terms of polarization sensors, polarization spectroscopy imaging, optical radar and remote sensing.

Key words: two-dimensional, anisotropic, Raman spectra, polarization-sensitive, photodetectors



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Fig. 1.  (Color online) Crystal structures of two-dimensional anisotropic materials, including (a) orthorhombic black-arsenic. Reproduced with permission[35]. Copyright 2018, John Wiley and Sons. (b) Orthorhombic black-phosphorus. Reproduced with permission[46]. Copyright 2014, Springer Nature. (c) Monoclinic GeAs. Reproduced with permission[47]. Copyright 2018, John Wiley and Sons. (d) Orthorhombic GeSe. Reproduced with permission[41]. Copyright 2017, American Chemical Society. (e) Triclinic KP15. Reproduced with permission[45]. Copyright 2018, American Chemical Society. (f) Monoclinic TiS3. Reproduced with permission[48]. Copyright 2018, Wiley-VCH. (g) Triclinic ReSe2. Reproduced with permission[49]. Copyright 2016, American Chemical Society.

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Fig. 2.  (Color online) Raman spectroscopy. (a)–(c) the schematic diagram of three typical polarized-Raman configurations. Reproduced with permission[62]. Copyright 2017, CPB. (d) The left is the Raman spectra of ReSe2 grown on hBN and SiO2 respectively. The right is the angular-dependent Raman intensity of 238 cm–1 shown in polar plot under different polarized-Raman configurations. Reproduced with permission[44]. Copyright 2018, American Chemical Society. (e) the angular-dependent Raman intensity of 212 and 406 cm–1 in ReS2(1–x)Se2x. Reproduced with permission[49]. Copyright 2016, American Chemical Society. (f) Angle-resolved polarized Raman spectra of KP15. The right picture is the intensity of peak 9. (g) Polarization-resolved PL intensity of KP15. The polar plots show the PL intensity of KP15 as the function of the detection angle and excitation angle respectively. Reproduced with permission[45]. Copyright 2018, American Chemical Society.

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Fig. 3.  (Color online) (a) The angle-dependent Raman spectrum of GeSe and the corresponding contour color map in the parallel-polarization configuration (left) and cross-polarization configuration (right). Reproduced with permission[41]. Copyright 2017, American Chemical Society. (b) The Raman spectrum of B-As with laser polarized along different directions (up). The angle-resolved intensity of Ag1 and B2g-mode are extracted and shown in polar plot (down). Reproduced with permission[35]. Copyright 2018, John Wiley and Sons. (c) The Raman spectrum of GeAs in the non-polarized, parallel-polarized and cross-polarized configuration (left). The angle-dependent Raman spectrum of GeAs under traditional configuration (right). (d) The intensities of angle-dependent Raman peak are extracted and shown in the polar plot. Reproduced with permission[40]. Copyright 2018, American Chemical Society.

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Fig. 4.  (Color online) (a) Schematic of the optical measurement under visible light (left-picture) and infrared light (right-picture). (b) Light absorption of B-P flake with different polarized light. (c) B-P photodetector with broadband response and polarization sensitivity. (1) The optical image of B-P photodetector with ring-electrode. (2) Polarization dependence of photoresponsivity from 400 to 1700 nm with polarization along x crystal axis (0°) and y crystal axis (90°). (3) The spatial mapping of photocurrent under polarization angle of 0 and 90 degree. Reproduced with permission[38]. Copyright 2015, Springer Nature. (d) The angle-dependent electrical conductance of B-As. The optical image of device for the anisotropic electrical measurements is inserted in it. (e) Temperature dependent resistance based on B-As Hall device shown in the inset(left). The magnetic field -dependent conductively ${\sigma _{xx}}$ and ${\sigma _{xy}}$, corresponding with the direction of armchair and zigzag (right). Reproduced with permission[35]. Copyright 2018, John Wiley and Sons. (f) The Ids–Vds curves of As0.83P0.17 with illumination and dark environment along x axis and y axis. (g) The laser polarization-sensitive photocurrents of As0.83P0.17 in polar plot at Vds = 0 V (left). Photocurrent mapping of As0.83P0.17 at Vds = 0 V (right) when polarization direction parallels (0°) and perpendicular (90°) to the contact edge of the metal. Reproduced with permission[39]. Copyright 2017, American Association for the Advancement of Science.

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Fig. 5.  (Color online) The properties of electricity and photoelectricity. (a) The optical image of GeAs for angle-dependent transporting measurement. (b) The anisotropic field-effect mobility in polar plot. Reproduced with permission[47]. Copyright 2018, John Wiley and Sons. (c) Angle-resolved absorption spectra of GeAs from 400 to 2000 nm. (d) The schematic diagram of polarized photodetection devices. (e) The polarization-sensitive photocurrents in polar plot under 520 and 830 nm laser. (f) The mapping of polarization-dependent photocurrent under 520 and 830 nm laser. Reproduced with permission[40]. Copyright 2018, American Chemical Society. (g) Polarization-resolved experimental absorption spectra of GeSe from 400 to 950 nm. (h) The colormap of anisotropic photo response under the 808 nm laser. x-axis represents the voltage of source and drain, y-axis represents the polarized angle, and Iph is denoted by the color bar. (i) The data of polarized Iph are extracted and shown in polar plot. Reproduced with permission[41]. Copyright 2017, American Chemical Society.

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Fig. 6.  (Color online) (a) The polarization sensitive transmission spectra of ReSe2 nanoflake. (b) Polarization dependent photocurrent mapping based on ReSe2 FET. The thickness of the ReSe2 channel is 12 nm. Reproduced with permission[44]. Copyright 2016, American Chemical Society. (c) Angle-dependent mobility of ReSe2, ReS0.38Se1.62 and ReS1.02Se0.98 alloys. Reproduced with permission[48]. Copyright 2017, John Wiley and Sons. (d) The polarization-sensitive transmittance spectra of a TiS3 crystal from 400 to 1000 nm (up-picture). Polar plot of the transmittance at 500, 600, 700, 800 nm wavelengths (down-picture). (e) I–V curves of the TiS3/Si-based device under the illumination of linearly polarized laser (660 nm). (f) Two polar plots of polarization-sensitive light currents under the bias voltage of –2 V (left-picture) and 0 V (right-picture). Reproduced with permission[48]. Copyright 2018, Wiley-VCH.

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Table 1.   2D anisotropic materials and reported crystal system, space group, bandgap, responsivity and anisotropic dichroic ratio.

MaterialSystemSpace groupBandgap (bulk/ monolayer)ResponsivityDichroic ratioRef.
B-POrthorhombicP2/c2/0.3 eVN8.7 at 1550 nm[68, 69]
As0.83P0.17OrthorhombicPcmn-D182h0.15/- eV15–30 mA/W at MIR region3.88 at 1550 nm[39]
GeSeOrthorhombicPcmn-D2h 161.34/1.70 eV4.25 A/W2.16808 nm, 1.44638 nm 1.09 532 nm[41]
GeAsMonoclinicC2/m0.83/2.07 eVN1.49 at 520 nm, 4.4 at
808 nm		[40, 47]
GePMonoclinicC2/m0.51/1.68 eV3.1 A/W at 532 nm1.83 at 532 nm[31]
ReS2TriclinicP1(bar)1.62/1.52 eV16.14 A/W at 532 nm~4.0 at 532 nm[43]
ReSe2TriclinicP1(bar)1.31/1.26 eV1.5 mA/W at 633 nm~ 2.0 at 633 nm, ~ 2.0 at 520 nm[44]
TiS3MonoclinicP21/m1.1/N eVN~4.0 at 830 nm, ~4.6 at
638 nm, ~2.8 at 532 nm		[52]
TiSeTetragonalI4/mcm (D4h 18)0.73/- eV1.43A/W at 633 nm2.65 at 633 nm[70]
TeTrigonalD340.35/1 eV5.3 A/W at 1.5 μm, 3 A/W at
3.0 μm		1.43 at 1.5 μm, 6.0 at
3.0 μm		[15]
Td-TaIrTe4OrthorhombicPmn21Semimetal0.34 mA/W at 633 nm, 30.2 μA/W at 4 μm, 20 μA/W at 10.6 μm1.13 at 633 nm, 1.56 at 4 μm, 1.88 at 10.6 μm[71]
Td-MoTe2OrthorhombicPmn21Semimetal0.40 mA/W at 532nm, 0.0415 mA/W at 10.6 μm,1.19 at 638 nm, 1.92 at 4 μm, 2.72 at 10.6 μm[72]
Td-WTe2OrthorhombicPmn21Semimetal250 A/W at 3.8 μm under 77 K4.9 at 514.5 nm[73]
N: Not acquired.
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    Received: 26 March 2019 Revised: 30 April 2019 Online: Accepted Manuscript: 15 May 2019Uncorrected proof: 15 May 2019Published: 05 June 2019

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      Article Navigation >  Journal of Semiconductors  > 2019  >  40(6): 061001
      Ziqi Zhou, Yu Cui, Ping-Heng Tan, Xuelu Liu, Zhongming Wei. Optical and electrical properties of two-dimensional anisotropic materials[J]. Journal of Semiconductors, 2019, 40(6): 061001. doi: 10.1088/1674-4926/40/6/061001 ****Z Q Zhou, Y Cui, P H Tan, X L Liu, Z M Wei, Optical and electrical properties of two-dimensional anisotropic materials[J]. J. Semicond., 2019, 40(6): 061001. doi: 10.1088/1674-4926/40/6/061001.
      Citation:
      Ziqi Zhou, Yu Cui, Ping-Heng Tan, Xuelu Liu, Zhongming Wei. Optical and electrical properties of two-dimensional anisotropic materials[J]. Journal of Semiconductors, 2019, 40(6): 061001. doi: 10.1088/1674-4926/40/6/061001 ****
      Z Q Zhou, Y Cui, P H Tan, X L Liu, Z M Wei, Optical and electrical properties of two-dimensional anisotropic materials[J]. J. Semicond., 2019, 40(6): 061001. doi: 10.1088/1674-4926/40/6/061001.
      shu

      Optical and electrical properties of two-dimensional anisotropic materials

      DOI: 10.1088/1674-4926/40/6/061001
      • 1.

        State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

      • 2.

        Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

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      • Corresponding author: Email: liuxuelu@semi.ac.cn and zmwei@semi.ac.cn; Email: liuxuelu@semi.ac.cn and zmwei@semi.ac.cn
      • Received Date: 2019-03-26
      • Revised Date: 2019-04-30
      • Published Date: 2019-06-01

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