Fig. 1.
(Color online) Theoretical breakdown voltages of epi-layers with various thickness and doping concentration.
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| Citation: |
Qiang Liu, Qian Wang, Hao Liu, Chenxi Fei, Shiyan Li, Runhua Huang, Song Bai. Low on-resistance 1.2 kV 4H-SiC power MOSFET with Ron, sp of 3.4 mΩ·cm2[J]. Journal of Semiconductors, 2020, 41(6): 062801. doi: 10.1088/1674-4926/41/6/062801
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Q Liu, Q Wang, H Liu, C X Fei, S Y Li, R H Huang, S Bai, Low on-resistance 1.2 kV 4H-SiC power MOSFET with Ron, sp of 3.4 mΩ·cm2[J]. J. Semicond., 2020, 41(6): 062801. doi: 10.1088/1674-4926/41/6/062801.
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Low on-resistance 1.2 kV 4H-SiC power MOSFET with Ron, sp of 3.4 mΩ·cm2
DOI: 10.1088/1674-4926/41/6/062801
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Abstract
A 4H-SiC power MOSFET with specific on-resistance of 3.4 mΩ·cm2 and breakdown voltage exceeding 1.5 kV is designed and fabricated. Numerical simulations are carried out to optimize the electric field strength in gate oxide and at the surface of the semiconductor material in the edge termination region. Additional n-type implantation in JFET region is implemented to reduce the specific on-resistance. The typical leakage current is less than 1 μA at VDS = 1.4 kV. Drain–source current reaches 50 A at VDS = 0.75 V and VGS = 20 V corresponding to an on-resistance of 15 mΩ. The typical gate threshold voltage is 2.6 V. -
References
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